Time filter

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Singh K.,Semi conductor Laboratory | Ngachenchaiah K.,Semi conductor Laboratory | Bhatnagar D.,University of Rajasthan | Pal S.,Satellite Center
Microwave Journal

This article presents a dual behavior resonator (DBR)-based microstrip filter for the realization of a diplexer at Ku-band. The transmit - receive (Tx - Rx) filter topologies are designed at the required frequency and are cascaded using an optimized T-junction. A notch in the transmission line is introduced to improve rejection at the receiving/transmitting bands and a detailed comparison study has been carried out. The diplexer is realized both on alumina and high resistivity silicon substrates. The measured result of the realized diplexer and the fabrication steps are detailed in this article. Source

Singh J.,Semi conductor Laboratory | Rajanna K.,Indian Institute of Science | Reddy A.M.,Semi conductor Laboratory | Singh K.,Semi conductor Laboratory
IEEE Transactions on Semiconductor Manufacturing

Diaphragm thickness and the corresponding piezoresistor locations change due to over or under etching in bulk micromachined piezoresistive pressure sensor which intern influences the device performance. In the present work, variation of sensitivity and nonlinearity of a micro electro mechanical system low pressure sensor is investigated. The sensor is modeled using finite element method to analyze the variation of sensitivity and nonlinearity with diaphragm thickness. To verify the simulated results, the sensors with different diaphragm thicknesses are fabricated. The models are verified by comparing the calculated results with experimental data. This study is potentially useful for the researchers as most of the times the diaphragm is either over-etched or under-etched due to inherent variation in wafer thickness and involving manual operations. © 1988-2012 IEEE. Source

Sarkar G.,Semi conductor Laboratory | Mallik D.,Semi conductor Laboratory | Jatana H.S.,Semi conductor Laboratory
2013 Annual International Conference on Emerging Research Areas, AICERA 2013 and 2013 International Conference on Microelectronics, Communications and Renewable Energy, ICMiCR 2013 - Proceedings

Cascaded Integrator Comb (CIC) filter is a special class of linear phase FIR filter that does not require any multiplier. They are generally used in multirate systems with large sampling conversion factors. Although CIC structure is a hardware efficient means of constructing interpolating or decimating filter, as the number of stages of the filter increase, the required hardware also increases. In this paper we present a programmable three stage CIC decimator filter with reduced hardware components as compared to the conventional CIC filter. It is shown that one adder and one subtractor with few combinational gates can be used to develop a three stage CIC filter. We propose two architectures that reduce the adder/subtractor in subsequent stages: one with tri-state buffers and another with multiplexer. It is found that a significant amount of hardware gates can be reduced by proper channeling of datapath using multiplexer or tri-state buffers aided with proper clock sequences. The same logic can be used to build CIC filter with higher stages using one adder and one subtractor. The architectures are verified by post-synthesis simulation and the corresponding results along with output waveforms are provided to justify its validity. © 2013 IEEE. Source

Chauhan A.K.,Semi conductor Laboratory | Karmakar A.,Semi conductor Laboratory | Singh K.,Semi conductor Laboratory
Microwave Review

The present work summarizes the design and development of 2×2 micromachined patch antenna array. Wafer thinning is carried out to cater for high frequency operations. Detailed design methodology with fabrication process steps is outlined in this article. A new concept of composite (Silicon-Glass) substrate synthesizing along with micromachined structure has been presented to shift the operating frequency band of the antenna. Comparative study is carried out for various antenna configurations. A good agreement is observed between the experimental results and simulated values. Source

Singh K.,Semi conductor Laboratory | Karmakar A.,Semi conductor Laboratory | Nagachenchaiah K.,Semi conductor Laboratory
IETE Journal of Research

This article presents the design and realization of an X-band (8.2 GHz) planar balun using microstrip technology. Further, various materials compatible to standard Complementary metal-oxide semiconductor (CMOS) process are analyzed, and the optimum process which is combination of plasma-enhanced chemical vapor deposition (PECVD) oxide and high-resistivity wafer is selected for better RF performance. The performance of the balun is optimized by electromagnetic analysis and realized on silicon substrate utilizing CMOS process. The measured results show close agreement with simulation having amplitude imbalance of ±0.35 dB (max.), return loss better than 14 dB (min.), and a maximum phase error of ±0.75° at the designed frequency. Source

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