Semi Conductor Devices

Israel

Semi Conductor Devices

Israel
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Balax D.,Thales Alenia | Terme J.-C.,Sofradir | Shlomovich B.,Semi Conductor Devices | Etchanchu T.,Thales Alenia | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

The RM3 is the new development in RM series, thanks to its innovative onboard drive electronics it is now possible for users to extend easily their systems through new functionalities. During this presentation you will have an overview of advantages and benefits of this onboard digital driver electronics both for the Detectors'Module makers and the End-users. Furthermore you will appreciate the specific performances of the RM3. Sofradir and SCD, both leading manufacturers of Detectors'module, have contributed through their expertise to evaluate successfully the RM3, operated by the onboard driver electronics. The results of these new functionalities and cryogenic performances will be revealed throughout the presentation. We plan to adapt this onboard drive electronics to the other products of the RM-series. The next generation of small sized camera's requires increasingly reliable and yet compact Cryocoolers. The customers also need Easy to use & Easy to replace products. We will demonstrate how the RM3 can provide user-friendly solutions to meet these expectations. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Klipstein P.,Semi Conductor Devices | Mizrahi U.,Semi Conductor Devices | Fraenkel R.,Semi Conductor Devices | Shtrichman I.,Semi Conductor Devices
Defence Science Journal | Year: 2013

For the highest end mid-wave-infrared applications, SCD, France offers a family of cryogenically cooled detectors with background limited performance (BLIP). The matured InSb planar technology is implemented in a variety of focal plane arrays, from a 320 × 256 format with a 30 μm pitch to a 1280 × 1024 format with a 15 μm pitch, all of which are operated at 77K. A major challenge is to reduce the cooling requirements. Then substantial reductions in size, weight, and power (SWaP) can be achieved by using a smaller cooler and Dewar assembly. SCD's new epi-InSb detectors, grown by molecular beam epitaxy, have a BLIP temperature of ~100 K at F/3. This enhanced operating temperature reduces the required cooling power by ~20 % compared with the conventional 77 K operation. For a very high operating temperature, we have developed the new XBn-InAsSb detector with a 4.2 μm cut-off wavelength. This detector exhibits a BLIP temperature of ~160K at F/3 and a reduction in cooling power of ~60 %. These HOT detectors enable an improved range of solutions, including faster cool-down time and mission readiness, longer mission times, and higher cooler reliability. We can also exploit their reduced dark current to obtain an enhanced signal to noise ratio at lower operating temperatures. The well-established 25 μm pitch family of uncooled μ-Bolometer detectors has two basic formats, 384 × 288 and 640 × 480, and several sensitivity grades. The very high sensitivity 25 μm pitch detector has been demonstrated at F/2.4 for mid-range systems. The wide-band detector is optimized for both the long-wave-infrared and mid-wave-infrared spectral bands. Recently we developed the new 17 μm pitch family of detectors. The 640 × 480 format is a leading candidate for applications such as thermal weapon sights, driver vision enhancers and other mid-range IR systems. The 17 μm family is currently being expanded with the high sensitivity grade and with the addition of two new formats: the compact 384 × 288 for low SWaP applications, and the large 1024 × 768 format for applications requiring high resolution and a wide field of view. © 2013, DESIDOC.

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