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Oviedo, FL, United States

Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2013

A new approach to the Army Tactical Engagement Simulation System (TESS) is proposed to increase the link reliability, increase range, and increase the amount of data that can be transferred. The new technology uses both laser sources and detectors with improved propagation properties that meet eye-safety requirements, and meet the cost requirements for TESS laser systems. The new technology offers the prospect of increasing both the laser power and link efficiency by overcoming scintillation and fading problems due to atmospheric turbulence characteristic of battlefield training. Efficiency and the amount of data transferred under engagement pairing may both be increased by utilizing new coding schemes with the lasers and detectors, along with improved digital signal processing. Increased range while retaining important information related to roll-off also appears possible. New techniques to extend battery lifetime will be explored, along with detailed simulation of the expected results and component testing. If successful, field-testing of the new technology is anticipated in a Phase II effort.

Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase II | Award Amount: 500.00K | Year: 2015

The Armys Multiple Integrated Laser Engagement Simulation (iMILES) currently uses a 904.5 nm wavelength laser link along with silicon photodiodes at a receiver (target). Several improvements are expected in the laser link capability with a change from 904.5 nm to the 1550 nm wavelength. One dramatic improvement could be range finding during line of sight tactical engagement. Range finding can improve situational awareness in the Armys simulation and training exercises, and eliminate the need for detector threshold to achieve roll-off. Additional improvements include improved atmospheric propagation of the laser pulses, reduced noise from background lighting, increased transmission through battlefield obscurants, increased eye-safety, and increased data rate.

Agency: Department of Defense | Branch: Air Force | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2007

Experimental and theoretical evidence indicate that charge localization through a quantum dot active region can significantly increase pump laser diode performance by reducing threshold current density and internal loss. Because of its charge localization and lower operating current density, quantum dot active material has demonstrated increased resistance to radiation-induced defects. sdPhotonics will use a novel quantum dot laser diode design to obtain low internal loss combined with a long cavity length of >2 cm to develop a proof-of-concept laboratory demonstration of a 980 nm high power quantum dot laser suitable for high power single mode fiber pumping. The Phase I will utilize a low loss waveguide design and fabrication presently under development for high power broad area stripe bars of quantum dot diodes, modified for narrow stripe operation and fiber pigtail pumping. High power fiber coupling will be achieved through waveguide broadening to obtain a narrow beam profile and a low alpha factor of the quantum dot active material. Designs will be developed for delivering > 5W CW into a fiber, based on measured beam and power characteristics. Laser diode fabrication will focus on high yield manufacturing and stress free mounting for increased reliability.

Agency: Department of Defense | Branch: Air Force | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2007

We propose to research and develop a new type of quantum dot (QD) mode-locked laser based on new active region and cavity designs. The cavity design will use a low loss QD/waveguide active region combined with index confinement through selective oxidation to enable cavity lengths greater than 1.5 cm that retain high optical extraction efficiency. The active region is designed with the goal of enabling mode locked operation at drive levels well above threshold to reach high peak powers. The mode locked QD laser will be designed for monolithic integration with a high gain optical amplifier using the same QD active material and waveguide to further increase the pulsed power from the laser. The key features of the new design are based on the potential to achieve very low internal loss in the QD active region, and its combination with low loss index confinement based on selective oxidation. Package development for low stress mounting and thermal management, along with device modeling, will be performed in the Phase I for device integration. The Phase I work will include laboratory demonstrations of high peak power mode locking at 1.3 µm and QD active region development for extension to longer wavelengths.

Deppe D.,University of Central Florida | Deppe D.,sdPhotonics LLC | Zhao G.,sdPhotonics LLC | Li M.,University of Central Florida | Yang X.,University of Central Florida
2015 IEEE Summer Topicals Meeting Series, SUM 2015 | Year: 2015

Removal of oxide layers from the VCSEL and incorporating AlAs in the low index mirror layers can dramatically decrease the VCSEL's thermal resistance, and has been shown to increase the stimulated emission rate [1]. These can be scaled down to a much smaller size and maintain high efficiency [2]. Therefore with smaller size, the electrical parasitics can also be reduced. © 2015 IEEE.

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