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Novikov Y.N.,RAS Semiconductor Physics Institute | Gritsenko V.A.,Novosibirsk State University | Krasnikov G.Y.,Scientific Research Institute of Molecular Electronics | Orlov O.M.,Scientific Research Institute of Molecular Electronics
Russian Microelectronics | Year: 2016

For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices. © 2016, Pleiades Publishing, Ltd.


Krasnikov G.Y.,Scientific Research Institute of Molecular Electronics | Bokarev V.P.,Scientific Research Institute of Molecular Electronics
Journal of Surface Investigation | Year: 2015

The surface melting temperatures of metals are calculated using the coordination-melting method. The relation between the surface melting of crystals and the temperature of the beginning of powder sintering is examined. An assumption is made that powder sintering begins at the time instant of attaining the temperature of surface melting for a given substance and occurs via the liquid surface phase. © 2015, Pleiades Publishing, Ltd.

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