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Lukashin V.M.,Scientific and Production Corporation Istok | Pashkovskii A.B.,Scientific and Production Corporation Istok | Zhuravlev K.S.,RAS Semiconductor Physics Institute | Toropov A.I.,RAS Semiconductor Physics Institute | And 3 more authors.

We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented. © 2014 Pleiades Publishing, Ltd. Source

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