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Sun M.,University of Electronic Science and Technology of China | Ning N.,University of Electronic Science and Technology of China | Li J.,University of Electronic Science and Technology of China | Yu Q.,University of Electronic Science and Technology of China | And 3 more authors.
Microwave and Optical Technology Letters | Year: 2016

In this letter, a two-stage low-noise amplifier (LNA) with continuously variable gain for 3-10 GHz Ultra-wideband (UWB) application has been realized in 65 nm CMOS technology. A self-biased shunt resistive feedback with source inductive degeneration topology is used to achieve wideband input matching in the first stage; the inductive-peaking technique is introduced to make the gain smooth; and common source amplifier structure is used to realize variable gain in the second stage. The LNA exhibits a continuously variable gain ranging from -13.2 dB to 16.4 dB, a minimum NF of 3.7 dB and power consumption between 11.1 mW and 16.2 mW under a 1.2 V supply voltage. Moreover, the LNA occupies silicon area of 0.12 mm2. © 2016 Wiley Periodicals, Inc.


Peng C.,CAS Shanghai Institute of Microsystem and Information Technology | Peng C.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Hu Z.,CAS Shanghai Institute of Microsystem and Information Technology | Hu Z.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | And 5 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2014

This paper evaluates the radiation responses of 3.3 V I/O NMOSFETs from 130 nm partially-depleted silicon-on-insulator (PDSOI) technology. The data obtained from 60Co ionizing radiation experiments indicate that charge trapped in the shallow trench isolation, particularly at the bottom region of the trench oxide, should be the dominant contributor to the off-state drain-to-source leakage current under ON bias. The body doping profile and device dimension are two key factors affecting the performance degradation of the PDSOI transistors after radiation. Significant front gate threshold voltage shift is observed in the T-shape gate device, which is well known as the Radiation Induced Narrow Channel Effect (RINCE). The charge trapped in the buried oxide can induce large threshold voltage shift in the front gate transistor through coupling effect in the low body doping device. The coupling effect is evaluated through three-dimensional simulation. A degradation of the carrier mobility which relates to shallow trench isolation (STI) oxide trapped charge in the narrow channel device is also discussed. © 2014 Elsevier B.V.


Guo J.,Sun Yat Sen University | Lu G.G.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | He G.Y.,Sun Yat Sen University | Jiao Z.X.,Sun Yat Sen University | Wang B.,Sun Yat Sen University
Laser Physics Letters | Year: 2013

We report a high-brightness and high-efficiency degenerate periodically poled MgO:LiNbO3 (PPMgLN) optical parametric oscillator (OPO), configured with a four-mirror standing-wave cavity and pumped by a Q-switched Nd:YVO4 laser. Attributed to the successful mode matching of four-mirror standing-wave cavity, we have obtained good beam qualities both in single-pass and double-pass geometry. The beam qualities of single-pass pump geometry are M2 ∼ 1.6 and 1.7 in the horizontal and vertical directions, and the beam qualities of double-pass pump geometry are M 2 ∼ 1.8 and 1.9. Optical to optical conversion efficiencies of 38% and 55% are achieved, respectively. With a volume Bragg grating used as the output coupler, we achieved a narrow linewidth of less than 2 nm. © 2013 Astro Ltd.


Jiao Z.,Sun Yat Sen University | Guo J.,Sun Yat Sen University | He G.,Sun Yat Sen University | Lu G.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Wang B.,Sun Yat Sen University
Optics and Laser Technology | Year: 2014

We report a narrow-bandwidth near-degenerate MgO:PPLN optical parametric oscillator (OPO) based on a volume Bragg grating (VBG) output coupler (OC) intracavity pumped by a linearly polarized Q-switched Nd:YAG laser. Maximum 2.1 μm output power of 7.1 W with beam quality factor M2 of 2.0 and 2.3 in horizontal and vertical directions is achieved. 23.5 W of 1 μm radiation with fundamental mode is obtained simultaneously. © 2013 Elsevier Ltd.


Sun M.Y.,University of Electronic Science and Technology of China | Lim W.M.,Nanyang Technological University | Shi Z.Y.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Yu Q.,University of Electronic Science and Technology of China | Liu Y.,University of Electronic Science and Technology of China
Microwave and Optical Technology Letters | Year: 2016

A low-noise amplifier (LNA) for 3-10 GHz ultrawideband applications is realized in 65-nm CMOS technology. A self-biased resistive feedback structure with inductive peaking topology is used to achieve wideband matching as well as flat gain, and the current reuse technique is used to reduce power consumption. Furthermore, a series source negative feedback resistor is introduced to achieve a significant input matching improvement for the purpose of saving chip area. The LNA exhibits 13.2-dB power gain, 4.38-dB minimum noise figure, and 6.54-mW power consumption under a 1.2-V supply voltage. Moreover, only two inductors are used in the circuit, occupying a silicon area of 0.072 mm2. It is able to achieve functionality with a small silicon area and a low-power consumption among recently published CMOS-based wideband LNAs. © 2016 Wiley Periodicals, Inc.


Tang Y.,South China University of Technology | Tang Y.,Zhongkai University of Agriculture and Engineering | Zhou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Huang J.H.,South China University of Technology | And 2 more authors.
Proceedings of the Electronic Packaging Technology Conference, EPTC | Year: 2014

The effect of nano-Bi particles on the growth of intermetallic compound (IMC) between Sn-3.0Ag-0.5Cu-xBi (x=0.0, 0.8, 1.5, 2.5, 3.5, and 4.5 wt.%) solder and Cu substrate during aging process at temperatures of 120, 150, and 190°C has been investigated in this study. Scanning electron microscopy (SEM) was used to observe the microstructural evolution of the solder joints and measure the thickness of IMC layer. Energy dispersive X-ray (EDX) was adopted to identify the composite of the IMC phase. The activation energies and growth rates of the IMC layer were determined. Results show that adding nano-Bi into Sn-3.0Ag-0.5Cu solder can increase activation energy and thus reduce the atomic diffusion rate, so as to suppress the excessive growth of the IMC layer. The solder joints containing about 0.8wt.% nano-Bi has the highest activation energy and the lowest growth rate. SEM images reveal that with an increase in nano-Bi to 0.8 wt.%, the number of small particles precipitated along grain boundary reaches maximum. Based on the observation of the microstructural evolution of the solder joints, a grain boundary pinning mechanism for inhibition of the IMC grow due to nano-Bi addition is proposed. © 2014 IEEE.


Cheng L.X.,South China University of Technology | Li G.Y.,South China University of Technology | Li Z.L.,South China University of Technology | Wu Z.Z.,South China University of Technology | Zhou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
Journal of Materials Science: Materials in Electronics | Year: 2015

The role of active element titanium for the bonding alumina substrates using Sn3.5Ag4Ti(Ce,Ga) alloy filler at 250 °C in air was studied. The influence of soldering time on the microstructure and element distribution was investigated. It was observed that the Sn3.5Ag4Ti(Ce,Ga) solder could wet the alumina well under the agitation of external force. No continuous reaction products could be detected at the alumina/solder interface by using scanning electron microscopy and X-ray diffractometer. It might be inferred that the joining could be accomplished by chemical adsorption of Ti on the alumina/solder interface, regardless of whether or not an interfacial reaction layer is formed. The theoretical analysis of the Ti element adsorption at the alumina/solder interface was tried. Results can further explain the adsorption phenomenon of Ti at the interface prior to bond formation. In the case of environmental temperature has yet to meet the chemical reaction conditions, the chemical adsorption between active elements and alumina can get good bond as well. The shear strengths of the soldered Al2O3/Al2O3 substrates with the soldering time of 15 min, 30 min, and 1 h were measured to be 15.46, 16.15, and 17.39 MPa respectively. © 2015, Springer Science+Business Media New York.


Tang Y.,South China University of Technology | Tang Y.,Zhongkai University of Agriculture and Engineering | Zhang P.F.,South China University of Technology | Zhou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Li G.Y.,South China University of Technology
ICRMS 2014 - Proceedings of 2014 10th International Conference on Reliability, Maintainability and Safety: More Reliable Products, More Secure Life | Year: 2014

Based on the module design of DTV receiver subsystem, effect of gold wire configuration parameters on the reliability of stacked die package for CPU and DDR chips was investigated by finite element method (FEM). In order to meet the requirement of the minimized package and rapid signal transmission between chips, the BGA package suitable for minimization was selected as packaging type, the 3D stacked die package was adopted as packaging structure, and wire was used as interconnection. Results show that the wire geometric parameters affected the quality of wires. With an increase in loop height, the stress of joints decreases. However, the central portion of wire deformation increases and results in short-circuit between fine pitch wires. Hence, the loop height of 150μιη was optimized for this special package. With an increase in horizontal spacing of wire, the stress of joints decreases. When the horizontal spacing of wire is greater than 7mm, serious deformation appears at the central of wire. Thus, the horizontal spacing of wire might be controlled in the range of l-6mm. When the vertical spacing of pad ranges from 0.2mm to 1.2mm, the stress of solder joints firstly increases and then decreases, and the central portion of wire deformation increases slightly. The optimized vertical spacing of pad is 0.2mm, 0.5mm, and 0.7mm. Results of this study could be a good reference for the selection of wire configuration of the stacked die package. © 2014 IEEE.


Tang Y.,Zhongkai University of Agriculture and Engineering | Tang Y.,South China University of Technology | Li G.Y.,South China University of Technology | Luo S.M.,Zhongkai University of Agriculture and Engineering | And 3 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2015

The growth kinetics of the interfacial intermetallic compounds (IMCs) between Sn–3.0Ag–0.5Cu–xTiO2 composite solder and Cu substrate during reflow process has been investigated in this work. Scanning electron microscope was adopted to observe the microstructure evolution of solder joints and measure the thickness of the interfacial IMC layer. The IMC phases were identified by energy-dispersive X-ray spectroscopy and X-ray diffractometry. Results show that both the reflow time and nano-TiO2 addition affects the microstructural morphology of IMCs. The thickness of Cu6Sn5 IMC was observed to increase with an increase in the reflow time, decrease with nano-TiO2 addition, and has a significant drop with the nano-TiO2 proportion of about 0.1 wt%. The growth of IMC layer was found to deviate the classical Fick’s diffusion law at the early stages of the IMC growth and then to approach the parabolic law. To explore the interfacial IMC growth kinetics, a diffusion wave model was proposed for predicting the IMC growth. Results show that the theoretical model was well consistent with the experimental data, which shows the feasibility of the model to predict the interfacial IMC growth for Sn–3.0Ag–0.5Cu–xTiO2 solder joints in the reflow process. © 2015, Springer Science+Business Media New York.


Tang Y.,South China University of Technology | Tang Y.,Zhongkai University of Agriculture and Engineering | Li G.Y.,South China University of Technology | Luo S.M.,Zhongkai University of Agriculture and Engineering | And 2 more authors.
Journal of Electronic Materials | Year: 2015

The creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints was investigated at different shear stresses ranging from 2–26 MPa and test temperatures of 25, 75, and 125°C. The stress exponent can be clearly defined in the low-stress (τ < 12 MPa) and high stress (τ > 15 MPa) ranges. The stress exponent is larger in the high-stress range, and decreases with increasing temperature in both low and high-stress ranges. The average modulus compensated shear stress transition point and the average activation energy were determined to be 1.08 × 10−3 and 90.59 kJ/mol, respectively. A creep constitutive model with internal stress incorporated into the Garofalo hyperbolic sine law model was used to describe the creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints. In this model, the relationship between creep strain rate and shear stress was determined by introducing internal stress that is a function of the shear stress in the low-stress range and a function of particle size and volume fraction of intermetallic particles in the high-stress range. The internal stress was calculated on the basis of the different creep mechanisms in the low and high-stress ranges. Results showed that the modified creep constitutive model was consistent with experimental data, which indicates that the model can be used to predict the creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints. © 2015, The Minerals, Metals & Materials Society.

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