Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Guangzhou, China

Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Guangzhou, China
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Xia J.,South China University of Technology | Li G.,South China University of Technology | Li B.,South China University of Technology | Cheng L.,South China Agricultural University | Zhou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
Microelectronics Reliability | Year: 2017

This paper presents a general methodology to predict the fatigue life of the Package-on-Package (PoP) under random vibration loading by means of vibration tests and finite element (FE) simulation. The behavior of the critical solder joints of the PoP under vibration loading was accurately described by FE model using ANSYS software and confirmed by modal analysis and linear sweep tests. The stress-life (S-N) curve of the PoP solder joints was obtained by the sinusoidal fatigue vibration tests and FE simulations to characterize the fatigue properties of the PoP under vibration. The comparison of the S-N curves of the SAC305 solder joints in different structures indicates the S-N curve of the SAC305 solder joints depends on the package structure. With the same fatigue cycles, the stress levels for the current 3D package is the smallest compared with the other 2D package due to the stacked structure of the PoP. Spectrum analysis for the random vibration tests was performed by the FE simulations to acquire the stress response power spectral density (PSD) of the critical solder joint. A specific frequency domain approach based on the Palmgren-Miner's rule was established to predict the fatigue life of the PoP under random vibration. Results show that simulated fatigue life matches well with the random vibration test results, which implies that this approach could be a potential method for the predication of fatigue life of the 3D packaging under random vibration. © 2017 Elsevier Ltd


Ye R.,Nanjing Southeast University | Liu S.,Nanjing Southeast University | Sun W.,Nanjing Southeast University | Hou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
Solid-State Electronics | Year: 2017

The ESD robustness of the lateral insulated gate bipolar transistors based on SOI substrate (SOI-LIGBTs) with two typical latch-up immunity structures, including P-sink well and P++ doping layer beneath the emitter, are compared and discussed. The SOI-LIGBT with P-sink well has the strong ESD robustness and fails at the collector side due to the concentrated current density. The SOI-LIGBT with P++ doping layer fails before it is triggered due to the large surface electric field at the PN junction between P-body and N-drift regions. Considering the comprehensive performances of both devices, the SOI-LIGBT with P-sink well is suggested as the output device, which guarantees high latch-up immunity ability and strong ESD robustness simultaneously. © 2017 Elsevier Ltd


Peng C.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | En Y.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Zhang Z.,CAS Shanghai Institute of Microsystem and Information Technology | Liu Y.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Lei Z.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
Microelectronics Reliability | Year: 2017

This paper presents the total ionizing dose (TID) radiation performances of core and input/output (I/O) MOSFETs from 130. nm partially-depleted silicon-on-insulator (PDSOI). Both the core NMOS and PMOS are totally hardened to 1.5. Mrad(Si), while the I/O devices are still sensitive to TID effect. The worst performance degradation is observed in I/O PMOS which is manifested as significant front gate threshold voltage shift and transconductance decrease. Contrary to PMOS, front gate transconductance overshoot is observed in short channel I/O NMOS after irradiation. A radiation induced localized damage model is proposed to explain this anomalous phenomenon. According to this model, the increments of transconductance depend on the extension distance and trapped charge density of the localized damage region in gate oxide. More trapped charge lead to more transconductance increase. These conclusions are also verified by the TCAD simulations. Furthermore, the model presents a way to extract the trapped charge density in the localized damage region. © 2017 Elsevier Ltd.


Wei J.,Nanjing Southeast University | Liu S.,Nanjing Southeast University | Liu X.,Nanjing Southeast University | Sun W.,Nanjing Southeast University | And 3 more authors.
Solid-State Electronics | Year: 2017

The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device. © 2017 Elsevier Ltd


Peng C.,CAS Shanghai Institute of Microsystem and Information Technology | Peng C.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Hu Z.,CAS Shanghai Institute of Microsystem and Information Technology | Hu Z.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | And 5 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2014

This paper evaluates the radiation responses of 3.3 V I/O NMOSFETs from 130 nm partially-depleted silicon-on-insulator (PDSOI) technology. The data obtained from 60Co ionizing radiation experiments indicate that charge trapped in the shallow trench isolation, particularly at the bottom region of the trench oxide, should be the dominant contributor to the off-state drain-to-source leakage current under ON bias. The body doping profile and device dimension are two key factors affecting the performance degradation of the PDSOI transistors after radiation. Significant front gate threshold voltage shift is observed in the T-shape gate device, which is well known as the Radiation Induced Narrow Channel Effect (RINCE). The charge trapped in the buried oxide can induce large threshold voltage shift in the front gate transistor through coupling effect in the low body doping device. The coupling effect is evaluated through three-dimensional simulation. A degradation of the carrier mobility which relates to shallow trench isolation (STI) oxide trapped charge in the narrow channel device is also discussed. © 2014 Elsevier B.V.


Guo J.,Sun Yat Sen University | Lu G.G.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | He G.Y.,Sun Yat Sen University | Jiao Z.X.,Sun Yat Sen University | Wang B.,Sun Yat Sen University
Laser Physics Letters | Year: 2013

We report a high-brightness and high-efficiency degenerate periodically poled MgO:LiNbO3 (PPMgLN) optical parametric oscillator (OPO), configured with a four-mirror standing-wave cavity and pumped by a Q-switched Nd:YVO4 laser. Attributed to the successful mode matching of four-mirror standing-wave cavity, we have obtained good beam qualities both in single-pass and double-pass geometry. The beam qualities of single-pass pump geometry are M2 ∼ 1.6 and 1.7 in the horizontal and vertical directions, and the beam qualities of double-pass pump geometry are M 2 ∼ 1.8 and 1.9. Optical to optical conversion efficiencies of 38% and 55% are achieved, respectively. With a volume Bragg grating used as the output coupler, we achieved a narrow linewidth of less than 2 nm. © 2013 Astro Ltd.


Jiao Z.,Sun Yat Sen University | Guo J.,Sun Yat Sen University | He G.,Sun Yat Sen University | Lu G.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Wang B.,Sun Yat Sen University
Optics and Laser Technology | Year: 2014

We report a narrow-bandwidth near-degenerate MgO:PPLN optical parametric oscillator (OPO) based on a volume Bragg grating (VBG) output coupler (OC) intracavity pumped by a linearly polarized Q-switched Nd:YAG laser. Maximum 2.1 μm output power of 7.1 W with beam quality factor M2 of 2.0 and 2.3 in horizontal and vertical directions is achieved. 23.5 W of 1 μm radiation with fundamental mode is obtained simultaneously. © 2013 Elsevier Ltd.


Sun M.Y.,University of Electronic Science and Technology of China | Lim W.M.,Nanyang Technological University | Shi Z.Y.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory | Yu Q.,University of Electronic Science and Technology of China | Liu Y.,University of Electronic Science and Technology of China
Microwave and Optical Technology Letters | Year: 2016

A low-noise amplifier (LNA) for 3-10 GHz ultrawideband applications is realized in 65-nm CMOS technology. A self-biased resistive feedback structure with inductive peaking topology is used to achieve wideband matching as well as flat gain, and the current reuse technique is used to reduce power consumption. Furthermore, a series source negative feedback resistor is introduced to achieve a significant input matching improvement for the purpose of saving chip area. The LNA exhibits 13.2-dB power gain, 4.38-dB minimum noise figure, and 6.54-mW power consumption under a 1.2-V supply voltage. Moreover, only two inductors are used in the circuit, occupying a silicon area of 0.072 mm2. It is able to achieve functionality with a small silicon area and a low-power consumption among recently published CMOS-based wideband LNAs. © 2016 Wiley Periodicals, Inc.


Cheng L.X.,South China University of Technology | Li G.Y.,South China University of Technology | Li Z.L.,South China University of Technology | Wu Z.Z.,South China University of Technology | Zhou B.,Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
Journal of Materials Science: Materials in Electronics | Year: 2015

The role of active element titanium for the bonding alumina substrates using Sn3.5Ag4Ti(Ce,Ga) alloy filler at 250 °C in air was studied. The influence of soldering time on the microstructure and element distribution was investigated. It was observed that the Sn3.5Ag4Ti(Ce,Ga) solder could wet the alumina well under the agitation of external force. No continuous reaction products could be detected at the alumina/solder interface by using scanning electron microscopy and X-ray diffractometer. It might be inferred that the joining could be accomplished by chemical adsorption of Ti on the alumina/solder interface, regardless of whether or not an interfacial reaction layer is formed. The theoretical analysis of the Ti element adsorption at the alumina/solder interface was tried. Results can further explain the adsorption phenomenon of Ti at the interface prior to bond formation. In the case of environmental temperature has yet to meet the chemical reaction conditions, the chemical adsorption between active elements and alumina can get good bond as well. The shear strengths of the soldered Al2O3/Al2O3 substrates with the soldering time of 15 min, 30 min, and 1 h were measured to be 15.46, 16.15, and 17.39 MPa respectively. © 2015, Springer Science+Business Media New York.


Tang Y.,South China University of Technology | Tang Y.,Zhongkai University of Agriculture and Engineering | Li G.Y.,South China University of Technology | Luo S.M.,Zhongkai University of Agriculture and Engineering | And 2 more authors.
Journal of Electronic Materials | Year: 2015

The creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints was investigated at different shear stresses ranging from 2–26 MPa and test temperatures of 25, 75, and 125°C. The stress exponent can be clearly defined in the low-stress (τ < 12 MPa) and high stress (τ > 15 MPa) ranges. The stress exponent is larger in the high-stress range, and decreases with increasing temperature in both low and high-stress ranges. The average modulus compensated shear stress transition point and the average activation energy were determined to be 1.08 × 10−3 and 90.59 kJ/mol, respectively. A creep constitutive model with internal stress incorporated into the Garofalo hyperbolic sine law model was used to describe the creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints. In this model, the relationship between creep strain rate and shear stress was determined by introducing internal stress that is a function of the shear stress in the low-stress range and a function of particle size and volume fraction of intermetallic particles in the high-stress range. The internal stress was calculated on the basis of the different creep mechanisms in the low and high-stress ranges. Results showed that the modified creep constitutive model was consistent with experimental data, which indicates that the model can be used to predict the creep behavior of 95.8Sn–3.5Ag–0.7Cu shear-lap solder joints. © 2015, The Minerals, Metals & Materials Society.

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