Zhang C.,National University of Defense Technology |
Chen J.,National University of Defense Technology |
Chi Y.,National University of Defense Technology |
Chi Y.,National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component |
Yang H.,National University of Defense Technology
IEICE Electronics Express | Year: 2014
For the first time, compared with common bulk PMOSFETs, single-event transient (SET) mechanism was researched in a novel SOI PMOSFETs using technology computer-aided design mixed-mode numerical (TCAD) simulations. The simulation results showed that, different from the common bulk CMOS technology, diffusion but not bipolar effect is the main mechanism in PMOSFETs fabricated in this novel SOI CMOS technology. The effects of buried oxide (BOX) layer and body tie on SET were also discussed for the PMOSFETs in this technology. The radiation hardened by design (RHBD) layout technique was proposed for further SET mitigation. All of the studies indicated that this novel SOI CMOS technology has the essential advantage for radiation hardened integrated circuit (IC) design. © 2014, IEICE. All rights reserved.
Tang Z.-S.,National University of Defense Technology |
Xu N.,National University of Defense Technology |
Liu R.-L.,National University of Defense Technology |
Chi Y.-Q.,National University of Defense Technology |
And 2 more authors.
Manufacturing and Engineering Technology - Proceedings of the 2014 International Conference on Manufacturing and Engineering Technology, ICMET 2014 | Year: 2015
In this work, a 16 × 16 Au/Ti/TiO2/Au memristor array with a line width of 2 um was fabricated and the discrete bipolar resistive switching behavior was studied. The discrete bipolar switching revealed the multiconduction paths formed by oxygen vacancies to be responsible for the working mechanism of the memristor. © 2015, Public Library of Science. All Rights Reserved.