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Gao T.,University of Electronic Science and Technology of China | Xu R.,University of Electronic Science and Technology of China | Kong Y.,Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China | Zhou J.,Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China | And 4 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

Monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are being developed for high-speed mixed-signal applications. Partially recessed gate combined with buffered gate insulator produce remarkably improved trade-off between the threshold voltage (1.4V) and current density (848mAmm-1) in the E-mode device. Record peak transconductances of 311 and 248mAmm-1 are obtained for D- and E-mode MIS-HEMTs, respectively. A direct-coupled FET logic (DCFL) 51-stage ring oscillator implemented using the MIS-HEMT technique is fabricated, which exhibits high-speed performance with an oscillation frequency of 908MHz and a high output voltage swing of 1.48V. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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