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Gao T.,University of Electronic Science and Technology of China | Xu R.,University of Electronic Science and Technology of China | Kong Y.,Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China | Zhou J.,Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China | And 4 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

Monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are being developed for high-speed mixed-signal applications. Partially recessed gate combined with buffered gate insulator produce remarkably improved trade-off between the threshold voltage (1.4V) and current density (848mAmm-1) in the E-mode device. Record peak transconductances of 311 and 248mAmm-1 are obtained for D- and E-mode MIS-HEMTs, respectively. A direct-coupled FET logic (DCFL) 51-stage ring oscillator implemented using the MIS-HEMT technique is fabricated, which exhibits high-speed performance with an oscillation frequency of 908MHz and a high output voltage swing of 1.48V. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Loading Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China collaborators
Loading Science And Technology On Monolithic Integrated Circuits And Modules Laboratorynanjing Electronic Devices Institute524 East Zhongshan Rdnanjing210016Pr China collaborators