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Zhang F.,Nanjing University of Aeronautics and Astronautics | Zhang F.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Gao B.,Nanjing University of Aeronautics and Astronautics | Zhou P.,Nanjing University of Aeronautics and Astronautics | Pan S.,Nanjing University of Aeronautics and Astronautics
IEEE Photonics Technology Letters | Year: 2016

A novel triangular pulse generator is proposed based on a polarization multiplexed optoelectronic oscillator (OEO). Employing a dual-polarization modulator, the proposed OEO can simultaneously oscillate at two frequencies of $f$ and $3f$ along the two orthogonal polarizations of the same optical carrier. Thanks to the harmonic injection coupling between the two OEO oscillations, the generated two signals have an exact frequency ratio of 1:3 and can be tuned to be in phase with each other. By properly setting the amplitudes of the two signals, a triangular pulse train can be generated. The generation of a 4.44-GHz triangular pulse train is experimentally demonstrated. A very clean electrical spectrum incorporating the 4.44- and 13.32-GHz components is obtained, and the two tones have good phase noises of -100.6 dBc/Hz at 10 kHz and -99.2 dBc/Hz at 10 kHz, respectively. The generated triangular waveform is very close to an ideal waveform, and the root-mean-square error between the generated and the ideal waveforms is 5.145× 10-4. © 1989-2012 IEEE.


Chu P.,Nanjing Southeast University | Hong W.,Nanjing Southeast University | Dai L.,Nanjing Southeast University | Tang H.,Nanjing Southeast University | And 6 more authors.
IEEE Transactions on Microwave Theory and Techniques | Year: 2014

In this paper, a novel planar bandpass filter is proposed, designed, and implemented with a hybrid structure of substrate integrated waveguide (SIW) and coplanar waveguide (CPW), which has the advantages of good passband and stopband performance inherited from SIW and miniaturized size accompanying with the CPW. Additional design flexibility is introduced by the hybrid structure for efficiently controlling the mixed electric and magnetic coupling, and then planar bandpass filters with controllable transmission zeros and quasi-elliptic response can be achieved. Several prototypes with single and dual SIW cavities are fabricated. The measured results verified the performance of the proposed planar bandpass filters, such as low passband insertion loss, sharp roll-off characteristics at transition band, etc. © 2014 IEEE.


Chu P.,Nanjing Southeast University | Hong W.,Nanjing Southeast University | Wang K.,University of Montréal | Tang H.,Nanjing Southeast University | And 5 more authors.
IEEE Transactions on Microwave Theory and Techniques | Year: 2014

A novel balanced filter realized in the form of substrate integrated waveguide (SIW) is proposed and studied in this paper. Based on the inherently horizontal and vertical symmetry of the SIW, this filter presents inherently high-performance balanced property with advantages of no identical pair requirement, being free from the limitation of symmetrical topology, easy and flexible design, high common-mode (CM) suppression, and robust CM suppression when comparing with conventional counterparts. Several prototypes are designed, fabricated, and measured to verify the expected properties. © 1963-2012 IEEE.


Li O.,University of Electronic Science and Technology of China | Cheng W.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Wang L.,University of Electronic Science and Technology of China | Lu H.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Xu R.,University of Electronic Science and Technology of China
RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz | Year: 2014

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave). © 2014 IEEE.


Jiang L.L.,Nanjing Electronic Devices Institute | Jia S.X.,Nanjing Electronic Devices Institute | Zhu J.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
Key Engineering Materials | Year: 2013

In this paper the oxygen plasma dry release process for membrane-bridge RF MEMS switches is studied and several methods are used to improve the dry release process. The residual PR (Photoresist) on the device substrate after different process time are observed and measured in this paper. The measured data shows that the residual PR exponentially reduces with etch time. It is found that the residual PR on the bottom surface of the membrane bridge is more than that on the substrate. The completely released RF MEMS switch using oxygen plasma dry etch process is obtained. © 2013 Trans Tech Publications Ltd, Switzerland.


Ding X.M.,Nanjing Electronic Devices Institute | Chen G.,Nanjing Electronic Devices Institute | Chen G.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Wang D.L.,Nanjing Electronic Devices Institute
Applied Mechanics and Materials | Year: 2013

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly. © 2013 Trans Tech Publications Ltd, Switzerland.


Chen G.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Chen G.,Nanjing Electronic Devices Institute | Jiang H.,Nanjing Electronic Devices Institute | Zhong S.C.,Nanjing Electronic Devices Institute | And 2 more authors.
Applied Mechanics and Materials | Year: 2013

Silicon carbide (SiC) static induction transistors (SITs) were fabricated using homegrown epi structures. The gate is a recessed gate - bottom contact (RG - B). The mesa space designed is 2.5 μm and the gate channel is 1.0 μm. The developed devices adopted a p-type Al ion implanted gate and power performance was improved by decreased leakage current and enhanced break-down voltage. The lift-off with assistant dielectric, dense gate recess etching, high temperature anneals and PECVD passivation process technologies are adopted. One cell has 200 source fingers and each source finger width is 50 μm. 0.5 mm SiC SIT yield a current density of 110 mA/mm at a drain voltage of 50 V. A maximum current density of 160 mA/mm was achieved with Vd = 80V, and the maximum transconductance is 40mS/mm. The device blocking voltage with a gate bias of -12 V was 400 V. Packaged 2 × 2-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 70 W was obtained with a power density of 17.5 W/cm and gain of 5.5 dB at L band 1 GHz under pulse 100μs and cycle ratio 1% RF operation and 80V drain to source voltage. © 2013 Trans Tech Publications Ltd, Switzerland.


Huang R.H.,Nanjing Electronic Devices Institute | Tao Y.H.,Nanjing Electronic Devices Institute | Chen G.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Bai S.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | And 2 more authors.
Advanced Materials Research | Year: 2014

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.


Sun J.,Nanjing Southeast University | Sun J.,Nanjing Electronic Devices Institute | Li Z.,Nanjing Southeast University | Zhu J.,Nanjing Electronic Devices Institute | And 4 more authors.
AIP Advances | Year: 2015

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100°C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage. © 2015 Author(s).


Lin G.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Chen T.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

A GaAs PHEMT device using dual field-plated design and 0.5 μm gate length is reported. In this work, GaAs PHEMT operating voltage is 28 V, and it achieves high power density of 2.18 W/mm as well as high PAE of 67% at 2 GHz.

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