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Zheng K.,Nanjing Electronic Devices Institute | Wang Z.,Nanjing Electronic Devices Institute | Wang Z.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory | Dai L.,Nanjing Electronic Devices Institute | And 3 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

A miniaturized LTCC low-pass filter (LPF) with wide stop-band suppression was designed in this article and its size was only 3.2 mm×1.6 mm×1.0 mm. A LPF prototype with a transmission zero was utilized here to enhance the inhibitory effect. In addition, the electromagnetic coupling effect inside the structure was effectively used by reasonably setting the shape and the location of the components, which lead to plurality of transmission zeros and excellent wide stop-band rejection. The cut-off frequency of the filter is 2.4 GHz and the maximum pass-band insertion loss is only 1 dB. The suppression of the stop-band at 3.8 GHz, 6.2 GHz and 7.15 GHz is 46 dB, 65 dB and 52 dB respectively, indicating the effective suppression of the high-order harmonics. Moreover, the suppression from 7.2 GHz to 12 GHz is greater than 20 dB. Such a wide stop-band range not only prevents the generation of spurious pass band effectively, but also reduces the signal interference of the other band in an applied circuit, so that the anti-intercerence ability of the circuit is enhanced. ©, 2015, NUAA Printing House. All right reserved. Source


Xu L.,Nanjing Electronic Devices Institute | Cao K.,Nanjing Electronic Devices Institute | Li S.,Nanjing Electronic Devices Institute | Wang Z.,Nanjing Electronic Devices Institute | Wang Z.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2014

The CQFN microwave package with 32 pins has been fabricated based on HTCC technology. The package size is 5 mm×5 mm×1.4 mm only. The side plated semi-through hole was designed to achieve the signal transmission from bottom pad to the bonding line. And the intensive grounding via array was added in the package, which could eliminate the coupling between the pins effectively. Measurement results show that the insertion loss of the package with lid is less than 0.5 dB on C-band, the VSWR of the package is less than 1.3 and the isolation is more than 30 dB. The miniaturization surface mount ceramic package was designed for multi-function MMIC worked on C-band. This sealing package with good performance is suitable for mass manufacturing. Source


Xu L.,Nanjing Electronic Devices Institute | Wang Z.,Nanjing Electronic Devices Institute | Wang Z.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory | Hu J.,Nanjing Electronic Devices Institute | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

Based on the vertical interconnection techniques for 2D LTCC(Low temperature co-fired ceramic) microwave modules, a three-button vertical microwave interconnection technique is proposed in this paper. The three-button vertical microwave interconnection structure was simulated and optimized by using HFSS. With the corresponding processes, the three-button vertical interconnection module was made and tested. The height of the fuzz-button is 3 mm, and the diameter is 0.5 mm. The test results are in agreement with the simulation data. The insertion loss of the module is less than 1.5 dB, and the return loss is more than 15 dB in X-band. Source


Wang Y.,Nanjing Electronic Devices Institute | Wang Y.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory | Ding Y.,Nanjing Electronic Devices Institute | Liu L.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2014

This paper presents the design and experiment of the SIW (Substrate Integrated Waveguide) slot filter. Four-slot and five-slot SIW filters are simulated by using CST software and fabricated with a single layer standard printed circuit board process. The measured results are in good agreement with the simulated data. These two kinds of filters have the following performences respectively, the center frequency of 15.85 GHz and 34 GHz with the fractional 3 dB bandwidth of 11.9% and 12.9%, and the insertion loss of 1.4 dB and 2.9 dB. The proposed filters show good selectivity and have advantages of wider stop-band and easier tuning compared with traditional SIW direct coupled filter. Source


Jiang L.,Nanjing Electronic Devices Institute | Jia S.,Nanjing Electronic Devices Institute | Feng O.,Nanjing Electronic Devices Institute | Zhu J.,Nanjing Electronic Devices Institute | Zhu J.,Science and Technology on Monolithic Integrated Circuit and Modules Laboratory
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

This paper studys the GaAs based low temperature surface process of millimeter wave MEMS switch which includes the sacrificial process, structure layer process, contact dimple process and the thin film resistance process of RF MEMS switch. The process of photosensitive PI sacrificial layer and the electrolpated gold sturcture layer are discussed in detail. The process flow for GaAs based millimeter wave MEMS switch is obtained, and the RF MEMS switch samples are made. The pull in voltage of the switch is 60 V, the insertion loss is less than 0.2 dB, and the isolation is better than 18 dB. Source

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