SCHMID Group and University of Central Florida | Date: 2013-06-05
A method for forming a boron doped region within a silicon material substrate, and the resulting silicon material substrate that includes the boron doped region, each use a boron doped aluminum oxide material layer as a boron dopant source layer. The method provides the boron doped region with a sheet resistance in a range from about 15 to about 300 ohms per square. The method is also applicable, in general, to forming an n doped region, a p doped region or an n and p co-doped region within a silicon material substrate.
SCHMID Group | Date: 2010-12-23
In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.
SCHMID Group | Date: 2011-06-07
In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, the surface is treated in a processing step and then a subsequent metallization on the surface of the wafer for producing contacts for the solar cell takes place. This processing step is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.
SCHMID Group | Date: 2010-10-13
A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.
SCHMID Group | Date: 2011-04-15
In a method for detaching wafers from a carrier unit, the wafers being formed by sawing a wafer block fastened to the carrier unit by gluing, and the wafers themselves still being glued on one side, the carrier unit with the wafers is introduced into an ungluing unit along a uniform movement plane. It remains therein and is enclosed in an ungluing basin by movable wall parts. Solvent for ungluing is applied into the ungluing basin and onto the wafers after the formation and closing of the ungluing basin to dissolve the glued bond and subsequently detach the wafers from the carrier unit.
SCHMID Group | Date: 2010-01-29
In order to transport printed circuit boards (30) through a processing system (12), printed circuit boards (30) lying one behind another can be connected by means of holding clips (22) to form a type of chain. The outer ends of the holding clips (22) are suspended on two spaced-apart transport chains (16) which provide for transport and mounting. The holding clips are formed in two parts with a lower holding part (22) and an upper holding part (40), between which a printed circuit board (30) is mounted.
SCHMID Group | Date: 2011-03-14
In a method for the treatment of substrates (13) for solar cells composed of silicon, after multiple etching the substrates are cleaned (18) with DI water. Afterwards, the substrates (13) are dried and heated in drying stations (22, 25). The heated substrates (13) are subsequently oxidized in an oxidation station (30) by means of oxidation gas (34) with a proportion of ozone.
SCHMID Group | Date: 2011-07-08
A carrier (13) for a silicon block (31) is designed to be firmly connected as part of a carrier arrangement (11), together with a lower carrier part (25), to the silicon block (31), and to be moved together therewith for machining by sawing, cleaning or the like. The underside of the carrier (13), which points towards the silicon block (31), has a plurality of channels (29), as does the lower carrier part (25) bonded thereto, the channels (29) in each case lying one above another. Water is introduced into the channels (29) in the carrier (13) from above and can run through sawing slots in the lower carrier part (25) between the wafers of the sawn-up silicon block (31) for cleaning purposes.
SCHMID Group | Date: 2010-06-18
A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.
SCHMID Group | Date: 2010-12-03
In order to fasten a silicon block on a support for improved further handling, fibre material is introduced into an adhesive joint between the silicon block and the support. The fibre material is impregnated with adhesive and consists of glass fibres. The silicon block is then positioned on the support. The fibre material assures that the adhesive joint is not pressed together too far and is more stable.