Bruz, France
Bruz, France
Time filter
Source Type

Liu X.,SATIE | Costa F.,University Paris Est Creteil | Bertrand R.,Ecole Normale Superieure de Cachan | Gautier C.,Paris West University Nanterre La Défense
PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management | Year: 2016

A half bridge power module using 650V/30A GaN HEMTs on PCB substrate has been fabricated and investigated with different ceramic decoupling capacitors for in-module E MI filtering. The experiments have shown that, by using small value decoupling capacitors, both differential and common mode currents' spectra have been significantly reduced from conducted to radiate emission frequency range. Time domain modeling and simulation have been studied to revisit the experimental results. The placement of the common mode decoupling capacitor has been discussed. In-module filtering strategy has been suggested in the conclusion. © VDE VERLAG GMBH · Berlin · Offenbach.

Avenas Y.,Joseph Fourier University | Dupont L.,SATIE | Baker N.,University of Aalborg | Zara H.,CEA Grenoble | Barruel F.,CEA Grenoble
IEEE Industrial Electronics Magazine | Year: 2015

Power conversion systems are dependent on the performance and reliability of static converters. However, they are subject to frequent functional and environmental strains, which can induce failures. The anticipation of these failures is difficult but important so the operation of a system can be halted before a breakdown occurs. In the case of photovoltaic (PV) power plants, the system can be simplified into two distinct blocks: the solar panels/modules and the power inverter. A breakdown in either of these blocks can cause significant downtime in the system. Nevertheless, multiple solar module failures can often be tolerated and not lead to a total breakdown of the entire array, whereas a single component failure in the inverter can lead to a collapse of the entire system. Furthermore, solar panel/module manufacturers often offer warranties of up to 20 years, while warranties for inverters rarely reach the ten-year mark [1]. As such, the overall cost of a PV inverter can increase by a factor of two or three if it undergoes one or two failures during the life of the system. Although the market competition between PV inverter manufacturers has traditionally focused on the efficiency of their product, a failure that induces a downtime of just a few days can easily negate the yield attained through a 1% efficiency improvement. Oversizing the inverter or introducing redundancy into the inverter system is one option to improve reliability; however, often, this is not economical. © 2007-2011 IEEE.

Kherrat A.,University of Rennes 1 | Le Bihan F.,University of Rennes 1 | Razan F.,SATIE | Coulon N.,University of Rennes 1 | And 4 more authors.
ECS Transactions | Year: 2010

For water monitoring or many chemical or biological applications, pH measurements are very important, and especially the detection of a small pH changes. Such applications require the development of microsystems that present high sensitivity to pH, have a simple use, a low cost and a small size. This present pH sensor is a highly sensitive Suspended Gate Field Effect Transistors (SGFET) interfaced with PDMS microfluidic channels. This microsystem allows the transport and the testing of the liquid. The compatibility of the two technologies is checked by controlling and optimizing the sticking between PDMS and the surface of the sensor, the good electrical insulation, the control of the sensor electrical behavior after sticking. Preliminary tests have validated the possibility of detecting the presence of liquids flowing through microchannels. These micro-chambers can be used for specific biological phenomena inducing these changes in pH (enzymes, cells). ©The Electrochemical Society.

Queval L.,Cergy-Pontoise University | Vido L.,Cergy-Pontoise University | Coty A.,Independent Researcher | Multon B.,SATIE
2015 10th International Conference on Ecological Vehicles and Renewable Energies, EVER 2015 | Year: 2015

The simplicity of photovoltaic motors makes them ideal candidates for fully autonomous applications requiring thousands of operating hours without maintenance, like water pumping. Photovoltaic motors use photovoltaic cells optically commutated by a shutter driven by the motor rotor to convert light energy into mechanical energy, without the need of any brushes or other power electronics. With the decrease of photovoltaic cells price, photovoltaic motors could be more affordable and reliable than conventional systems, and therefore particularly well suited for off-grid applications. The concept has been patented under various forms, but the scientific literature is so far very scarce. In this article, we attempt to classify photovoltaic motors, and to explain in details their physical working principle. Then we compare the different architectures by defining two pre-design factors linked to the system maximal output power. Finally, we report first experimental results on a photovoltaic switched reluctance motor (PV SRM) prototype using a 6/4 switched reluctance machine and 12 photovoltaic cells. © 2015 European Union.

Berkani M.,SATIE | Lefebvre S.,Ecole Normale Superieure de Cachan | Rostaing G.,Ecole Normale Superieure de Cachan | Riccio M.,University of Naples Federico II | And 3 more authors.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | Year: 2016

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring. © 2016 IEEE.

Ibrahim A.,SATIE | Ousten J.P.,SATIE | Lallemand R.,SATIE | Khatir Z.,SATIE
Microelectronics Reliability | Year: 2015

Silicon carbide (SiC) MOSFETs power modules are very attractive devices and are already available in the market. Nevertheless, despite technological progress, reliability remains an issue and reliability tests must be conducted to introduce more widely these devices into power systems. Because of trapping/de-trapping phenomena at the SiC/SiO2 interface that lead to the shift of threshold voltage, test protocols based on silicon components cannot be used as is, especially in high temperature conditions. Using high temperature SiC MOSFET power modules, we highlight the main experimental difficulties to perform power cycling tests. These reversible physical mechanisms preclude the use of temperature sensitive parameters (TSEP) for junction temperature measurements, so we set up fiber optic temperature sensors for this purpose. Moreover, these degradation phenomena lead to difficulties in both controlling the test conditions and seeking for reliable aging indicator parameters. Finally, a power cycling test protocol at high temperature conditions is proposed for such devices. © 2015 Elsevier Ltd.

Ali M.,SATIE | Laboure E.,E Laboure Is With Lgep | Costa F.,SATIE
IEEE Transactions on Power Electronics | Year: 2014

This letter presents a novel integrated structure for electromagnetic interference (EMI) active filter. This approach integrates an active filter with a passive one to form a hybrid EMI filter. The chosen active filtering circuit is integrated on the printed board circuit embedding the integrated EMI choke. Theoretical and realization results show the integration compatibility between the active part and the passive part. Then, EMI measurements show that the proposed integrated hybrid filter can greatly reduce the noise at high and low frequencies while reducing the overall bulkiness. © 1986-2012 IEEE.

Levy P.-E.,SATIE | Costa F.,SATIE | Gautier C.,SATIE | Revol B.,SATIE
IEEE International Symposium on Electromagnetic Compatibility | Year: 2014

Inductive coupling in an electromagnetic interference (EMI) filter are sometimes difficult to evaluate. In this paper, a new analytical model is discussed. This model is based on conformal mapping techniques and allows the calculation of radiated magnetic fields. Thanks to the use of Fourier series, it can be applied to any current distribution around a coil with toroidal ferromagnetic core and reveals the influence of the winding configuration on leakage inductance and radiated field's distribution. © 2014 IEEE.

Frantz G.,G2Elab | Frey D.,G2Elab | Schanen J.-L.,G2Elab | Revol B.,Satie
2013 15th European Conference on Power Electronics and Applications, EPE 2013 | Year: 2013

The presence of numerous power electronics converters on embedded networks, originates EMC issues. EMC modeling of power electronic converters is tricky due to modeling complexity. Indeed, on one side, EMC study needs the finest characterization of each element, thus, only a few numbers of converters plugged to the network can be described. On the other hand, a conventional network approach, representing the converters on a pure functional point of view, does not allow such analysis of each element. Therefore 'black box' or 'grey box' approaches, representing the global behavior of the converters, are a good compromise between those two antagonistic needs. This article aims to sum-up characteristics of different EMC models in order to justify the choice of terminated approach. Then, all identification issues will be addressed: • Theoretical difficulties such as the physical meaning of the identified impedances • Practical difficulties like attenuated conditions sizing and measurement protocol. © 2013 IEEE.

Tala-Ighil B.,University of Caen Lower Normandy | Trolet J.-L.,British Petroleum | Gualous H.,University of Caen Lower Normandy | Mary P.,British Petroleum | Lefebvre S.,SATIE
Microelectronics Reliability | Year: 2015

This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900Gy with a dose rate of 2.80Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs. © 2015 Elsevier Ltd.

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