Yu C.,Shanghai JiaoTong University |
Yang Y.,SanDisk Semiconductor Shanghai Co. |
Chen J.,Shanghai JiaoTong University |
Xu J.,Shanghai JiaoTong University |
Lu H.,Shanghai JiaoTong University
Materials Letters | Year: 2014
Electroplating process was widely used for preparing Cu metallization in semiconductor devices, while Kirkendall voids (KVs) were usually observed at Cu3Sn/electroplated Cu interface. In this paper, the effect of the thickness of the electroplated Cu film on the voiding behaviors has been investigated. High current density, 50 mA/cm2, was used during electroplating. It is found that as the deposit thickness was 2 μm, no obvious KVs were found even after aged at 150 °C for 30 days. However, as the deposit thickness was 10 μm, a large number of KVs were observed just after soldering, at Cu6Sn5/Cu interface. During aging, the KVs gradually condensed into a continuous crack. And further prolonging the holding time, the crack was found to transfer to a large opening. The Cu 3Sn layer became thinner during the whole stage. It seems that thicker deposit film would induce more impurities and vacancies, which further promoting Kirkendall voiding, as well as consuming the Cu3Sn layer. © 2014 Elsevier B.V. Source
Sandisk Semiconductor Shanghai Co. and Sandisk Information Technology Shanghai Co. | Date: 2013-01-09
A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.
Sandisk Semiconductor Shanghai Co. and Sandisk Information Technology Shanghai Co. | Date: 2014-11-18
A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. A bridge structure is also mounted to the substrate, with the semiconductor die fitting within a trench formed in a bottom surface of the bridge structure. The bridge structure may be formed from a semiconductor wafer into either a dummy bridge structure functioning as a mechanical spacer layer, or an IC bridge structure functioning as both a mechanical spacer layer and an integrated circuit semiconductor die. Memory die may also be mounted atop the bridge structure.
Sandisk Information Technology Shanghai Co. and Sandisk Semiconductor Shanghai Co. | Date: 2011-05-18
A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.
Sandisk Information Technology Shanghai Co. and Sandisk Semiconductor Shanghai Co. | Date: 2015-04-09
A system and method are disclosed for applying a die attach epoxy to substrates on a panel of substrates. The system includes a window clamp having one or more windows through which the epoxy may be applied onto the substrate panel. The size and shape of the one or more windows correspond to the size and shape of the area on the substrate to receive the die attach epoxy. Once the die attach epoxy is sprayed onto the substrate through the windows of the window clamp, the die may be affixed to the substrate and the epoxy cured in one or more curing steps. The system may further include a clean-up follower for cleaning epoxy off of the window clamp, and a window cleaning mechanism for cleaning epoxy off of the sidewalls of the windows of the window clamp.