Xiamen sanAn Optoelectronics Co.

Xiamen, China

Xiamen sanAn Optoelectronics Co.

Xiamen, China
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Li X.,Xiamen University | Lin G.,Xiamen Sanan Optoelectronics Co. | Liu G.,Xiamen University | Liu G.,Xiamen Sanan Optoelectronics Co. | And 4 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2016

In order to investigate the influence of the outdoor solar spectrum deviation on current matching (CM) and conversion efficiency of multi-junction solar cell, we have calculated the outdoor annual terrestrial solar spectrum in Golmud area by SMARTS software. Moreover, the performance of the triple junction GaInP/GaInAs/Ge solar cell under high concentration conditions is studied. The solar cell structure can be optimized by varying the current matching between different subcells. It is indicated that the power generation will reach the maximum when the current of middle GaInAs cell is 5% less than top GaInP cell without considering of the influence of the optical system. Furthermore, by adding the certain concentration optical system factor, the maxima will appear at the current of middle cell is 2.5% less than the top cell. © 2016, Editorial Board of Acta Energiae Solaris Sinica. All right reserved.

Qi Z.,Huazhong University of Science and Technology | Li S.,Huazhong University of Science and Technology | Li S.,Xiamen sanAn Optoelectronics Co. | Sun S.,Huazhong University of Science and Technology | And 6 more authors.
Nanotechnology | Year: 2015

An effective approach for growing large-scale, uniformly aligned ZnO nanorods arrays is demonstrated. The synthesis uses a GaN quantum dot (QD) template produced by a self-assembled Stranski-Krastanow mode in metal organic chemical vapor deposition, which serves as a nucleation site for ZnO owing to the QD's high surface free energy. The resultant ZnO nanorods with uniform shape and length align vertically on the template, while their density is easily tunable by adjusting the density of GaN QDs, which can be adjusted by simply varying growth interruption. By controlling the density of ZnO nanorod arrays, their optical performance can also be improved. This approach opens the possibility of combining one-dimensional (1D) with 0D nanostructures for applications in sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects. © 2015 IOP Publishing Ltd.

Qi Z.,Huazhong University of Science and Technology | Li S.,Huazhong University of Science and Technology | Li S.,Xiamen San'an Optoelectronics Co. | Li S.,Tianjin San'an Optoelectronics Co. | And 6 more authors.
Journal of Electronic Materials | Year: 2015

The influences of the different growth methods of GaAs cap layer on the self-assembled InAs quantum dots were investigated via photoluminescence and transmission electron microscopy. A two-step growth technique, consisting of a low temperature pulsed atomic layer epitaxy and a high temperature conventional continuous growth method, could improve the surface morphology and photoluminescence intensity due to the enhancement of Ga atomic mobility and the reduction in dislocation density. Furthermore, the photoluminescence peak shows a red shift instead of a blue shift due to the strain relaxation. © 2015 The Minerals, Metals & Materials Society

Guijiang L.,Xiamen University | Guijiang L.,Xiamen Sanan Optoelectronics Co Ltd | Jyhchiarng W.,Xiamen Sanan Optoelectronics Co Ltd | Meichun H.,Xiamen University
Journal of Semiconductors | Year: 2010

A typical GaInP/GaInAs/Ge tandem solar cell structure operating under AM0 illumination is proposed, and the current-voltage curves are calculated for different recombination velocities at both front and back-surfaces of the three subcells by using a theoretical model including optical and electrical modules. It is found that the surface recombination at the top GaInP cell is the main limitation for obtaining high efficiency tandem solar cells. © 2010 Chinese Institute of Electronics.

Cai W.,Xiamen Sanan Optoelectronics Co. | Bi J.,Xiamen Sanan Optoelectronics Co. | Lin G.,Xiamen Sanan Optoelectronics Co. | Liu G.,Xiamen Sanan Optoelectronics Co. | And 6 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2013

The MOCVD epitaxial growth process of the tunnel junctions in IMM solar cells was studied. After the growth, the structural analysis as XRD and SEM show the high crystal quality of the epi-layers. I-V measurement indicates that tunnel effects strongly depend on the thickness, band gap and the doping level of the tunnel junction. When the thickness is 40 nm, the carrier concentration of the p region is above 7×1019cm-3 and n region is above 3×1019cm-3, the peak current of the tunnel junction can meet the current requirement of the triple junction solar cell under the 1000 suns. Without the ARC, under 1000 suns, AM1.5D, 25°C, Low-AOD conditions, the inverted dual junction solar cell get the Voc=2.776V, Isc=10.63A, FF=82.4%, Eff=24.27%.

Li S.-Q.,Xiamen Sanan Optoelectronics Co. | Li S.-Q.,Tsinghua University | Wang L.,Tsinghua University | Han Y.-J.,Tsinghua University | And 4 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2011

A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved. © 2011 Chinese Physical Society.

Lin G.J.,Xiamen Sanan Optoelectronics Co. | Wang L.J.,Xiamen Sanan Optoelectronics Co. | Liu J.Q.,Xiamen Sanan Optoelectronics Co. | Xiong W.P.,Xiamen Sanan Optoelectronics Co. | And 3 more authors.
Procedia Environmental Sciences | Year: 2011

High concentration multi-junction solar cells are starting to be commercialized. However, few studies about their reliability have been carried out. In this paper, we present the results of accelerated aging tests performed on Sanan high concentration solar cells. It is found that the relative power degradations of tested samples are within 10%. For comparison, commercial cells from Emcore are also tested under similar conditions, and the results are similar with that from Sanan. The tested electrical insulations of these cells before and after thermal cycling test also meet requirements from IEC 62108. © 2011 Published by Elsevier Ltd.

Hu W.,CAS Institute of Semiconductors | Cheng B.,CAS Institute of Semiconductors | Xue C.,CAS Institute of Semiconductors | Su S.,CAS Institute of Semiconductors | And 8 more authors.
Thin Solid Films | Year: 2012

In 0.01Ga 0.99As thin films free of anti-phase domains were grown on 7°offcut Si (001) substrates using Ge as buffer layers. The Ge layers were grown by ultrahigh vacuum chemical vapor deposition using 'low/high temperature' two-step strategy, while the In 0.01Ga 0.99As layers were grown by metal-organic chemical vapor deposition. The etch-pit counting, cross-section and plane-view transmission electron microscopy, room temperature photoluminescence measurements are performed to study the dependence of In 0.01Ga 0.99As quality on the thickness of Ge buffer. The threading dislocation density of Ge layer was found to be inversely proportional to the square root of its thickness. The threading dislocation density of In 0.01Ga 0.99As on 300 nm thick Ge/offcut Si was about 4 × 10 8 cm - 2. Higher quality In 0.01Ga 0.99As can be obtained on thicker Ge/offcut Si virtual substrate. We found that the threading dislocations acted as non-radiative recombination centers and deteriorated the luminescence of In 0.01Ga 0.99As remarkably. Secondary ion mass spectrometry measurement indicated as low as 10 16 cm - 3 Ge unintended doping in In 0.01Ga 0.99As. © 2012 Elsevier B.V. All rights reserved.

Bi J.,Xiamen Sanan Optoelectronics Co. | Bi J.,Xiamen University | Lin G.,Xiamen Sanan Optoelectronics Co. | Liu J.,Xiamen Sanan Optoelectronics Co. | And 5 more authors.
AIP Conference Proceedings | Year: 2012

On the way to the industrial application of inverted metamorphic triple junction solar cell, the 1 eV In0.3Ga0.7As subcell epitaxial grown by MOCVD on InxGa1-xP graded buffer layers were reported here. The structural analysis of XRD, SEM, TEM, and SIMS were carried out. The I-V and EQE characterizations were measured under the 1000 suns AM 1.5D conditions. Those results extended the industrial vista of the high efficiency, low dislocation density, current matching solar cells. © 2012 American Institute of Physics.

PubMed | Tianjin Sanan Optoelectronics Co., Xiamen Sanan Optoelectronics Co. and Huazhong University of Science and Technology
Type: | Journal: Nanoscale research letters | Year: 2015

The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

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