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Belvaux, Luxembourg

Sam and Gomes | Date: 2003-08-21

dog towels.

Sam | Date: 2006-09-06

Neon signs.

Sam | Date: 1985-03-19


Nittler L.,SAM | Nittler L.,Catholic University of Louvain | Delcorte A.,Catholic University of Louvain | Bertrand P.,Catholic University of Louvain | Migeon H.-N.,SAM
Surface and Interface Analysis

Pristine and Au-covered molecular films have been analyzed by ToF-SIMS for different amounts of evaporated gold. In contrast to other MetA-SIMS studies, the metallization of the high-mass polymers (polycarbonate and polystyrene) was carried out in situ. The evaporation flux was monitored with a quartz-crystal microbalance, and the exact quantity of deposited gold was determined by XPS. It was found that the sticking coefficient of gold on these polymers is less than one. The evolution of the secondary ion yield using Argon ion bombardment is studied as a function of the total amount of deposited metal. Furthermore, the SIMS results are accompanied by a detailed characterization of the sample surfaces morphology, in order to check any possible relation between the structure of the deposited metallic film and the yield enhancement of S-SIMS signals. Copyright © 2010 John Wiley & Sons, Ltd. Source

Philipp P.,SAM | Barry P.,SAM | Wirtz T.,SAM
Surface and Interface Analysis

In the present paper, we focus on the diffusion behaviour of cesium atoms implanted into silicon. This aspect has not been investigated directly up to now but is of utmost importance to understand the ionisation mechanisms in more detail. Density functional theory calculations combined with ab initio molecular dynamics simulations have been used to study the different aspects of cesium diffusion to the sample surface as a function of cesium concentration and sample temperature. In general, the solubility of cesium atoms in a silicon matrix is small, and the diffusion of the cesium atoms towards the surface is almost immediate, depending on how and where the cesium atom is incorporated in the silicon lattice. Depending on the defects introduced into the Si substrate, the diffusion could be largely reduced or cannot be observed during the few picosecond time range that can be explored by ab initio molecular dynamics simulations. Copyright © 2014 John Wiley & Sons, Ltd. Source

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