SAFC Hitech

Merseyside, United Kingdom

SAFC Hitech

Merseyside, United Kingdom
SEARCH FILTERS
Time filter
Source Type

Kwon J.,University of Texas at Dallas | Saly M.,SAFC Hitech | Halls M.D.,Materials Design Inc. | Kanjolia R.K.,SAFC Hitech | Chabal Y.J.,University of Texas at Dallas
Chemistry of Materials | Year: 2012

Tertbutylallylcobalttricarbonyl ( tBu-AllylCo(CO) 3) is shown to have strong substrate selectivity during atomic layer deposition of metallic cobalt. The interaction of tBu-AllylCo(CO) 3 with SiO 2 surfaces, where hydroxyl groups would normally provide more active reaction sites for nucleation during typical ALD processes, is thermodynamically disfavored, resulting in no chemical reaction on the surface at a deposition temperature of 140 °C. On the other hand, the precursor reacts strongly with H-terminated Si surfaces (H/Si), depositing ∼1 ML of cobalt after the first pulse by forming Si-Co metallic bonds. This remarkable substrate selectivity of tBu-AllylCo(CO) 3 is due to an ALD nucleation reaction process paralleling a catalytic hydrogenation, which requires a coreactant that acts as a hydrogen donor rather than a source of bare protons. The chemical specificity demonstrated in this work suggests a new paradigm for developing selective ALD precursors. Namely, selectivity can be achieved by tailoring the ligands in the coordination sphere to obtain structural analogues to reaction intermediates for catalytic transformations that exhibit the desired chemical discrimination. © 2012 American Chemical Society.


Bernal Ramos K.,University of Texas at Dallas | Saly M.J.,SAFC Hitech | Chabal Y.J.,University of Texas at Dallas
Coordination Chemistry Reviews | Year: 2013

Deposition of thin films with desired compositions, conformality and bonding to substrates is a key component in nanotechnology research. The growth of metal films by atomic layer deposition (ALD) has become an important field of study due to its wide range of applications. However, metal deposition by ALD has not been a straightforward process for most metals. Precursor design and their reactivity with surfaces, as well as their reactions with different co-reactants, are important factors in the deposition of metals. The growth of noble metals and copper by ALD are the best-established, mainly due to their favorable reduction potentials. However, due to the lack of efficient precursors and co-reactants, the deposition of other metals has been a real challenge and just few reports have been documented. This review discusses the strategies used to achieve successful metal ALD by considering in depth the current challenges associated with the development of these processes, the crucial role that ligands play in the development of new precursors, and how molecular properties can be tuned by intelligent ligand manipulation. In addition, the deposition of some metals and their reaction mechanisms are discussed in some detail. © 2013 Elsevier B.V.


News Article | November 10, 2016
Site: www.newsmaker.com.au

This report studies Trimethylgallium (TMG) in Global market, especially in North America, Europe, China, Japan, Southeast Asia and India, focuses on top manufacturers in global market, with capacity, production, price, revenue and market share for each manufacturer, covering  DOW (Korea)  Akzo Nobel  Nata  DOW (USA)  SAFC Hitech (Taiwan)  SAFC Hitech (US)  SAFC Hitech (UK)  Puyao  Jiayin Market Segment by Regions, this report splits Global into several key Regions, with production, consumption, revenue, market share and growth rate of Trimethylgallium (TMG) in these regions, from 2011 to 2021 (forecast), like  North America  Europe  China  Japan  Southeast Asia  India  Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into  Type I  Type II  Type III  Split by application, this report focuses on consumption, market share and growth rate of Trimethylgallium (TMG) in each application, can be divided into  Application 1  Application 2  Application 3 1 Trimethylgallium (TMG) Market Overview  1.1 Product Overview and Scope of Trimethylgallium (TMG)  1.2 Trimethylgallium (TMG) Segment by Type  1.2.1 Global Production Market Share of Trimethylgallium (TMG) by Type in 2015  1.2.2 Type I  1.2.3 Type II  1.2.4 Type III  1.3 Trimethylgallium (TMG) Segment by Application  1.3.1 Trimethylgallium (TMG) Consumption Market Share by Application in 2015  1.3.2 Application 1  1.3.3 Application 2  1.3.4 Application 3  1.4 Trimethylgallium (TMG) Market by Region  1.4.1 North America Status and Prospect (2011-2021)  1.4.2 Europe Status and Prospect (2011-2021)  1.4.3 China Status and Prospect (2011-2021)  1.4.4 Japan Status and Prospect (2011-2021)  1.4.5 Southeast Asia Status and Prospect (2011-2021)  1.4.6 India Status and Prospect (2011-2021)  1.5 Global Market Size (Value) of Trimethylgallium (TMG) (2011-2021) 2 Global Trimethylgallium (TMG) Market Competition by Manufacturers  2.1 Global Trimethylgallium (TMG) Capacity, Production and Share by Manufacturers (2015 and 2016)  2.2 Global Trimethylgallium (TMG) Revenue and Share by Manufacturers (2015 and 2016)  2.3 Global Trimethylgallium (TMG) Average Price by Manufacturers (2015 and 2016)  2.4 Manufacturers Trimethylgallium (TMG) Manufacturing Base Distribution, Sales Area and Product Type  2.5 Trimethylgallium (TMG) Market Competitive Situation and Trends  2.5.1 Trimethylgallium (TMG) Market Concentration Rate  2.5.2 Trimethylgallium (TMG) Market Share of Top 3 and Top 5 Manufacturers  2.5.3 Mergers & Acquisitions, Expansion 3 Global Trimethylgallium (TMG) Capacity, Production, Revenue (Value) by Region (2011-2016)  3.1 Global Trimethylgallium (TMG) Capacity and Market Share by Region (2011-2016)  3.2 Global Trimethylgallium (TMG) Production and Market Share by Region (2011-2016)  3.3 Global Trimethylgallium (TMG) Revenue (Value) and Market Share by Region (2011-2016)  3.4 Global Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016)  3.5 North America Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016)  3.6 Europe Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016)  3.7 China Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016)  3.8 Japan Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016)  3.9 Southeast Asia Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016) 3.10 India Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2011-2016) 4 Global Trimethylgallium (TMG) Supply (Production), Consumption, Export, Import by Regions (2011-2016)  4.1 Global Trimethylgallium (TMG) Consumption by Regions (2011-2016)  4.2 North America Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016)  4.3 Europe Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016)  4.4 China Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016)  4.5 Japan Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016)  4.6 Southeast Asia Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016)  4.7 India Trimethylgallium (TMG) Production, Consumption, Export, Import by Regions (2011-2016) 5 Global Trimethylgallium (TMG) Production, Revenue (Value), Price Trend by Type  5.1 Global Trimethylgallium (TMG) Production and Market Share by Type (2011-2016)  5.2 Global Trimethylgallium (TMG) Revenue and Market Share by Type (2011-2016)  5.3 Global Trimethylgallium (TMG) Price by Type (2011-2016)  5.4 Global Trimethylgallium (TMG) Production Growth by Type (2011-2016) 6 Global Trimethylgallium (TMG) Market Analysis by Application  6.1 Global Trimethylgallium (TMG) Consumption and Market Share by Application (2011-2016)  6.2 Global Trimethylgallium (TMG) Consumption Growth Rate by Application (2011-2016)  6.3 Market Drivers and Opportunities  6.3.1 Potential Applications  6.3.2 Emerging Markets/Countries 7 Global Trimethylgallium (TMG) Manufacturers Profiles/Analysis  7.1 DOW (Korea)  7.1.1 Company Basic Information, Manufacturing Base and Its Competitors  7.1.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.1.2.1 Type I  7.1.2.2 Type II  7.1.3 DOW (Korea) Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.1.4 Main Business/Business Overview  7.2 Akzo Nobel  7.2.1 Company Basic Information, Manufacturing Base and Its Competitors  7.2.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.2.2.1 Type I  7.2.2.2 Type II  7.2.3 Akzo Nobel Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.2.4 Main Business/Business Overview  7.3 Nata  7.3.1 Company Basic Information, Manufacturing Base and Its Competitors  7.3.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.3.2.1 Type I  7.3.2.2 Type II  7.3.3 Nata Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.3.4 Main Business/Business Overview  7.4 DOW (USA)  7.4.1 Company Basic Information, Manufacturing Base and Its Competitors  7.4.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.4.2.1 Type I  7.4.2.2 Type II  7.4.3 DOW (USA) Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.4.4 Main Business/Business Overview  7.5 SAFC Hitech (Taiwan)  7.5.1 Company Basic Information, Manufacturing Base and Its Competitors  7.5.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.5.2.1 Type I  7.5.2.2 Type II  7.5.3 SAFC Hitech (Taiwan) Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.5.4 Main Business/Business Overview  7.6 SAFC Hitech (US)  7.6.1 Company Basic Information, Manufacturing Base and Its Competitors  7.6.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.6.2.1 Type I  7.6.2.2 Type II  7.6.3 SAFC Hitech (US) Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.6.4 Main Business/Business Overview  7.7 SAFC Hitech (UK)  7.7.1 Company Basic Information, Manufacturing Base and Its Competitors  7.7.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.7.2.1 Type I  7.7.2.2 Type II  7.7.3 SAFC Hitech (UK) Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.7.4 Main Business/Business Overview  7.8 Puyao  7.8.1 Company Basic Information, Manufacturing Base and Its Competitors  7.8.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.8.2.1 Type I  7.8.2.2 Type II  7.8.3 Puyao Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.8.4 Main Business/Business Overview  7.9 Jiayin  7.9.1 Company Basic Information, Manufacturing Base and Its Competitors  7.9.2 Trimethylgallium (TMG) Product Type, Application and Specification  7.9.2.1 Type I  7.9.2.2 Type II  7.9.3 Jiayin Trimethylgallium (TMG) Capacity, Production, Revenue, Price and Gross Margin (2015 and 2016)  7.9.4 Main Business/Business Overview 8 Trimethylgallium (TMG) Manufacturing Cost Analysis  8.1 Trimethylgallium (TMG) Key Raw Materials Analysis  8.1.1 Key Raw Materials  8.1.2 Price Trend of Key Raw Materials  8.1.3 Key Suppliers of Raw Materials  8.1.4 Market Concentration Rate of Raw Materials  8.2 Proportion of Manufacturing Cost Structure  8.2.1 Raw Materials  8.2.2 Labor Cost  8.2.3 Manufacturing Expenses  8.3 Manufacturing Process Analysis of Trimethylgallium (TMG) 9 Industrial Chain, Sourcing Strategy and Downstream Buyers  9.1 Trimethylgallium (TMG) Industrial Chain Analysis  9.2 Upstream Raw Materials Sourcing  9.3 Raw Materials Sources of Trimethylgallium (TMG) Major Manufacturers in 2015  9.4 Downstream Buyers 12 Global Trimethylgallium (TMG) Market Forecast (2016-2021)  12.1 Global Trimethylgallium (TMG) Capacity, Production, Revenue Forecast (2016-2021)  12.2 Global Trimethylgallium (TMG) Production, Consumption Forecast by Regions (2016-2021)  12.3 Global Trimethylgallium (TMG) Production Forecast by Type (2016-2021)  12.4 Global Trimethylgallium (TMG) Consumption Forecast by Application (2016-2021)  12.5 Trimethylgallium (TMG) Price Forecast (2016-2021)


Knisley T.J.,Wayne State University | Saly M.J.,SAFC Hitech | Heeg M.J.,Wayne State University | Roberts J.L.,SAFC Hitech | Winter C.H.,Wayne State University
Organometallics | Year: 2011

Treatment of MCl2 (M = Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1,4-di-tert-butyl-1,3-diazadiene (tBu2DAD) in tetrahydrofuran at ambient temperature afforded Cr(tBu2DAD) 2 (38%), Mn(tBu2DAD)2 (81%), Fe( tBu2DAD)2 (47%), Co(tBu2DAD)2 (36%), and Ni(tBu2DAD)2 (41%). Crystal structure determinations revealed monomeric complexes that adopt tetrahedral coordination environments and were consistent with tBu2DAD radical anion ligands. To evaluate the viability of M(tBu2DAD)2 (M = Cr, Mn, Fe, Co, Ni) as potential film growth precursors, thermogravimetric analyses, preparative sublimations, and solid-state decomposition studies were performed. Mn( tBu2DAD)2 is the most thermally robust among the series, with a solid-state decomposition temperature of 325 °C, a sublimation temperature of 120 °C/0.05 Torr, and a nonvolatile residue of 4.3% in a preparative sublimation. Thermogravimetric traces of all complexes show weight loss regimes from 150 to 225 °C with final percent residues at 500 °C ranging from 1.5 to 3.6%. Thermolysis studies reveal that all complexes except Mn(tBu2DAD)2 decompose into their respective crystalline metal powders under an inert atmosphere. Mn(tBu2DAD)2 may afford amorphous manganese metal upon thermolysis. © 2011 American Chemical Society.


Bacsa J.,University of Liverpool | Hanke F.,University of Liverpool | Hindley S.,SAFC Hitech | Odedra R.,SAFC Hitech | And 3 more authors.
Angewandte Chemie - International Edition | Year: 2011

Good things come to those who wait: More than 160 years after their discovery, we have determined the solid-state structures of the classic organometallic compounds dimethylzinc and diethylzinc by using X-ray crystallography and density functional theory. The study shows that the linear molecules form weak intermolecular interactions with small covalent contributions. Me 2Zn undergoes a solid-solid phase transition at 180 K (see picture). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Fang Z.,University of Liverpool | Aspinall H.C.,University of Liverpool | Odedra R.,SAFC Hitech | Potter R.J.,University of Liverpool
Journal of Crystal Growth | Year: 2011

TaN x thin films were grown at temperatures ranging from 200 to 375 °C using atomic layer deposition (ALD). Pentakis(dimethylamino)tantalum (PDMAT) was used as a tantalum source with either ammonia or monomethylhydrazine (MMH) as a nitrogen co-reactant. Self-limiting behaviour was observed for both ammonia and MMH processes, with growth rates of 0.6 and 0.4 Å/cycle, respectively at 300 °C. Films deposited using ammonia were found to have a mono-nitride stoichiometry with resistivities as low as 70 m cm. In contrast, films deposited using MMH were found to be nitrogen rich Ta 3N 5 with high resistivities. A Quartz Crystal Microbalance (QCM) was used to measure mass gain and loss during the cyclic ALD processes and the data was used in combination with medium energy ion scattering (MEIS) to elucidate the PDMAT absorption mechanisms. © 2011 Elsevier B.V. All rights reserved.


Hollingsworth N.,University of Bath | Johnson A.L.,University of Bath | Kingsley A.,SAFC Hitech | Kociok-Kohn G.,University of Bath | Molloy K.C.,University of Bath
Organometallics | Year: 2010

Reaction of ZnMe2 with 1,3-bis(dimethylamino)propan-2-ol (Hbdmap) in 2:1 ratio forms both [MeZn(bdmap)·ZnMe2] 2 (2) and [MeZn(bdmap)]3·ZnMe2 (3) depending on the concentration of the reaction. In the former, ZnMe2 is coordinated to a free N-donor of the bdmap ligand and rather more loosely to the oxygen of the alkoxide. In 3, the ZnMe2 is coordinated to two free N-donors of the bdmap ligand. 2 reacts with O2 at low temperatures with controlled insertion into one of the Zn-C bonds of the coordinated ZnMe2 group to form the peroxide [MeZn(bdmap)] 2MeZnOOMe (4). 4 decomposes slowly, and the hydroxide [MeZn(bdmap)]2MeZnOH (5) was isolated; in addition to 5, two other decomposition products have been unambiguously identified, namely, (MeZn) 5(bdmap)3O (6) and (MeZn)4(bdmap) 4ZnO (7). The formation of these species can be linked to reactions of the hydroxide (5), or its associated radical [MeZn(bdmap)] 2MeZn(O•)], with species such as ZnMe2 or MeZn(bdmap), present is solution as a result of operating Schlenk equilibria. The structure of [MeZn(bdmap)]4 (1) is also reported. © 2010 American Chemical Society.


Wu F.,Washington University in St. Louis | Tian L.,Washington University in St. Louis | Kanjolia R.,SAFC Hitech | Singamaneni S.,Washington University in St. Louis | Banerjee P.,Washington University in St. Louis
ACS Applied Materials and Interfaces | Year: 2013

We demonstrate conductivity switching from a metal to semiconductor using plasmonic excitation and charge injection in Au-nanorod (AuNRs)-ZnO nanocomposite films. ZnO films 12.6, 20.3, and 35.6 nm were deposited over AuNRs using atomic layer deposition. In dark conditions, the films transitioned from metallic to semiconducting behavior between 150 and 200 K. However, under sub-bandgap, white light illumination, all films behaved as semiconductors from 80 to 320 K. Photoresponse (light/dark conductivity) was strongly dependent on the thickness of ZnO, which was 94.4 for AuNR-12.6 nm ZnO and negligible for AuNR-35.6 nm ZnO. Conductivity switching and thickness dependence of photoresponse were attributed to plasmonically excited electrons injected from AuNRs into ZnO. Activation energies for conduction were extracted for these processes. © 2013 American Chemical Society.


Knisley T.J.,Wayne State University | Ariyasena T.C.,Wayne State University | Sajavaara T.,University of Jyväskylä | Saly M.J.,SAFC Hitech | Winter C.H.,Wayne State University
Chemistry of Materials | Year: 2011

A new low temperature copper atomic layer deposition (ALD) process that employs a three precursor sequence entailing Cu-(OCHMeCH2NMe 2), formic acid, and hydrazine, was described. The growth of copper metal films by ALD was carried out using, formic acid, and anhydrous hydrazine as precursors on Si(100) substrates with the native oxide. The results demonstrate that the film growth at 120°C proceeds by a self-limiting ALD growth mechanism and no copper metal film growth was observed at ≯200°C with processes employing formic acid or hydrazine. The SEM images of a film deposited under the same conditions show no cracks or pinholes and a very uniform surface. Metals such as ruthenium that can catalyze the low temperature elimination of carbon dioxide from formates may not require a reducing precursor.


Grant
Agency: GTR | Branch: EPSRC | Program: | Phase: Research Grant | Award Amount: 95.67K | Year: 2013

The engineering of the metal/insulator nanostructures capable of harnessing THz energy is the central aim of this project. The challenge lies in tuning the barrier heights at the metal/insulator interfaces for optimal terahertz energy conversion. Instrumental in achieving this ambitious goal is thorough understanding of interfacial barrier formation and correlation of physical and electrical properties of proposed nanostructures. The nanostructures will be fabricated using atomic layer deposition (ALD). The ALD deposition system enables a controlled microstructure, leading to better uniformity and control of the tunnelling barriers composition and thickness, as well as interface integrity and stability. The target is addressed in three coupled work phases, which are strongly linked, and entail voluminous theoretical and experimental study with a wide range of characterization techniques. The successful outcome of the project will facilitate an emerging technology and complement research efforts at Manchester University and Imperial College in the UK to bring about new efficient electronic devices for terahertz energy harvesting in infrared and visible domain.

Loading SAFC Hitech collaborators
Loading SAFC Hitech collaborators