RSA le rubis SA

Jarrie, France

RSA le rubis SA

Jarrie, France

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Alombert-Goget G.,University Claude Bernard Lyon 1 | Sen G.,CNRS Materials Science and Engineering | Pezzani C.,RSA le rubis SA | Barthalay N.,RSA le rubis SA | And 2 more authors.
Optical Materials | Year: 2016

Large diameter Ti-doped sapphire single crystals were grown by the Kyropoulos technique. The optical characterizations (luminescence, transmittance, evaluation of the FOM) of these bulk crystals are presented. The presented results are promising for the growth of large Ti-doped sapphire crystals by Kyroupolos technology for petawatt scale amplifier. © 2016 Elsevier B.V.


Nehari A.,CNRS Laboratory of Physical Chemistry of Luminescent Materials | Brenier A.,CNRS Laboratory of Physical Chemistry of Luminescent Materials | Panzer G.,CNRS Laboratory of Physical Chemistry of Luminescent Materials | Lebbou K.,CNRS Laboratory of Physical Chemistry of Luminescent Materials | And 7 more authors.
Crystal Growth and Design | Year: 2011

Transparent high optical quality and large Ti-sapphire (Ti 3-doped AI2O3) single crystals have been grown by the Kyropoulos technique (KT) for optical amplification. The present work shows that by the utilization of KT growth technology and the optimization of the growth conditions it is possible to grow Ti-doped Al2O 3, 100 mm in diameter and 5 kg in weight. We have demonstrated that large Ti(0.25 atom %)-doped Al2O3 crystals show high chemical homogeneities and good optical properties and amplify the energy without any special annealing. Ti-doped sapphire crystals are for high power laser applications and particularly for the shortest pulses ever produced from a laser oscillator. © 2010 American Chemical Society.


Nehari A.,University Claude Bernard Lyon 1 | Laidoune A.,University Claude Bernard Lyon 1 | Khetib M.,University Claude Bernard Lyon 1 | Grosvalet L.,University Claude Bernard Lyon 1 | And 5 more authors.
Optical Materials | Year: 2011

The micro-pulling down technique has been used to grow fibers (φ = 1 mm) and square (2 × 2 mm2) sapphire shaped single crystals with controlled sizes. The hot zone construction and fiber pulling conditions have been optimized. As a result, growth of transparent and homogeneous sapphire shaped crystals has been performed. The crystals have been grown under 1 bar of argon atmosphere with pulling rate varied in the range of 0.5-3 mm/min. 100% of the melt has been continually transformed into crystalline sapphire with empty crucible at the end of the growth operation. The as grown crystals show high chemical homogeneities and good optical properties. © 2011 Elsevier B.V. All rights reserved.


Nehari A.,University Claude Bernard Lyon 1 | Mehnaoui M.,University Claude Bernard Lyon 1 | Breton G.,University Claude Bernard Lyon 1 | Gullin Y.,University Claude Bernard Lyon 1 | And 7 more authors.
Optical Materials | Year: 2010

Sapphire rod shaped single crystals were grown from the melt under stationary stable state using pulling down technique. The utilisations of sapphire crystals for optical applications require high quality, especially chemical homogeneity and defects minimisation. We will present the growth conditions and crystals quality of sapphire rods grown by pulling down technology using Al2O3 spherical powder. © 2010 Elsevier B.V. All rights reserved.


Ghezal E.A.,University Claude Bernard Lyon 1 | Nehari A.,RSA le Rubis SA | Lebbou K.,University Claude Bernard Lyon 1 | Duffar T.,British Petroleum
Crystal Growth and Design | Year: 2012

Quite often sapphire shaped crystals contain specific defects called bubbles of average diameter higher than 100 μm or microbubbles of diameter smaller than 10 μm. These defects strongly affect the crystal properties. Bubbles of 100 μm in diameter have been observed in the molten zone during micropulling-down of sapphire fibers. Before their incorporation inside the crystal, they show a periodic oscillation and consequently deform the crystallization interface. These observations are discussed with reference to the available literature. © 2012 American Chemical Society.


Ghezal E.A.,University Claude Bernard Lyon 1 | Li H.,University Claude Bernard Lyon 1 | Nehari A.,RSA le Rubis SA | Alombert-Goget G.,University Claude Bernard Lyon 1 | And 4 more authors.
Crystal Growth and Design | Year: 2012

Bubbles defects have been always observed in sapphire crystals. Their distribution and size are strongly dependent on the growth conditions. We have studied the effect of the pulling rate on the bubbles' size and their distribution in sapphire rods grown by the micropulling down (μ-PD) technique. Using a central circular capillary die of shape factor 0.33, the bubbles' diameter decreased as a function of the pulling rate. The transmission decreased at a pulling rate greater than 1 mm/min. © 2012 American Chemical Society.


Alombert-Goget G.,University Claude Bernard Lyon 1 | Li H.,University Claude Bernard Lyon 1 | Faria J.,University Claude Bernard Lyon 1 | Labor S.,RSA le Rubis SA | And 2 more authors.
Optical Materials | Year: 2016

The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method. © 2015 Elsevier B.V. All rights reserved.

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