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Los Lunas, NM, United States

Chen D.,MEI Technologies Inc. | Forney J.D.,MEI Technologies Inc. | Pease R.L.,RLP Research RLP Research | Phan A.M.,MEI Technologies Inc. | And 12 more authors.
IEEE Radiation Effects Data Workshop | Year: 2010

We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2x at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ∼ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels. ©2010 IEEE. Source

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