RF Micro Devices , was an American company that designed and manufactured high-performance radio frequency systems and solutions for applications that drive wireless and broadband communications. Headquartered in Greensboro, North Carolina, RFMD traded on the NASDAQ under the symbol RFMD. The Company was founded in Greensboro, North Carolina, in 1991. RF Micro has 3500 employees, 1500 of them in Guilford County, North Carolina.The company's products, predominantly radio frequency integrated circuits and packaged modules that utilize them, were used in cellular networks and mobile phones, for wireless connectivity such as wireless LAN, GPS and Bluetooth, in cable modems and cable TV infastructure, and for other applications including military radar. The most important applications in terms of sales were GaAs-based power amplifiers and antenna control solutions used in mobile phones , WiFi RF front-ends and components used in wireless infrastructure equipment.The company announced in February 2014 that it would merge with TriQuint Semiconductor. On January 2nd, 2015, RFMD and Triquint jointly announced that they had completed their merger of equals to form Qorvo , and that Qorvo would start trading on the NASDAQ Global Stock Market starting from that day. Wikipedia.


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News Article | November 22, 2016
Site: www.newsmaker.com.au

The growing demand for power efficient wireless systems is the key factor contributes the growth of global CMOS power amplifiers market. CMOS power refers to complementary metal-oxide semiconductor (CMOS) radio frequency (RF) power amplifiers (Pas), are commonly utilized in mobile devices. CMOS Power Amplifiers are designed to meet the linearity, output power and low noise requirements of the 3GPP UMTS standards by consuming very low current. CMOS Power Amplifier is a silicon based amplifier, which has low power capability compared to other semiconductor based power amplifiers.  CMOS Power Amplifier has greater benefits compared to GaAs - based power amplifiers including low production cost and greater integration and consistency. CMOS Power Amplifiers has ability to integrate multiple modes including GSM, EDGE, WCDMA, TD - SCDMA and LTE. Continuous investment to utilize CMOS technologies for RF power amplifiers (PAs), rapid development in global wireless communications technology, and the cost advantages of CMOS technologies over other semiconductor technologies are the key factor drives the growth of CMOS power amplifiers market globally. Additionally, growing interest among smartphone manufactures to develop multiband, multimode mobile devices that can support multiple 2G, 3G, and 4G LTE standards, rising demand for higher bandwidth and longer battery life in mobile devices and continuous investment to commercialize 5G communication, are the key drivers accelerates the growth for CMOS power amplifier market globally. Also growing research and development investments to utilize CMOS power amplifiers in Radio Frequency Identification (RFID) and Internet of Things (IoT) applications further fuels the growth of global CMOS power amplifiers market. The global CMOS power amplifiers market can be segmented on the basis of type, modes, application and by region. On the basis of type, the global CMOS power amplifiers market can be segmented into nonlinear, linear, and linearized.  By modes, the global CMOS power amplifiers market can be segmented into current source and switch mode. On the basis of application, the global CMOS power amplifiers market can be segmented into smartphones feature phones, connected tablets and others. Regionally, the global CMOS power amplifiers market can be segmented into North America, Latin America, Western Europe, Eastern Europe, Middle East & Africa (MEA), Asia Pacific excluding Japan (APEJ) and Japan. The global CMOS power amplifiers market is expected to wetness significant growth in all major regions including North America, Latin America, Western Europe, Eastern Europe, Middle East, Africa and Asia.  Asia pacific is expected to dominate the market due to increasing population, rising volume of smartphone users, increasing affordability and growing interest to commercialize 5G network in the emerging economies. Some of the key vendors in the global CMOS power amplifiers market include Qualcomm Technologies, Inc., Skyworks Solutions, Inc.,  RFMD, Toshiba Corporation, Avago Technologies, ACCO Semiconductor, Inc., DSP GROUP,  Peregrine Semiconductor Corp., Javelin Semiconductor, and Black Sand Technologies.


Grant
Agency: European Commission | Branch: FP7 | Program: MC-IAPP | Phase: PEOPLE-2007-3-1-IAPP | Award Amount: 1.92M | Year: 2008

The goal of our Network is to address the full development chain of Compact Modeling (CM) of advanced CMOS and III-V technologies, from the technology level to the system level. Our mission is driven by the need to enhance scientific knowledge, transfer scientific and technological knowledge from academia to industry, to strengthen the European integrated circuit (IC) industry with powerful design automation methodologies and to achieve integration of European research in a fragmented area for the benefit of both young and experienced researchers.


This report studies Mobile Semiconductor in Global market, especially in North America, Europe, China, Japan, Korea and Taiwan, focuses on top manufacturers in global market, with capacity, production, price, revenue and market share for each manufacturer, covering • Qualcomm • MediaTek • Intel • STMicro • Broadcom • Samsung • TI • RFMD • Skyworks • Renasas Market Segment by Regions, this report splits Global into several key Regions, with production, consumption, revenue, market share and growth rate of Mobile Semiconductor in these regions, from 2011 to 2021 (forecast), like • North America • Europe • China • Japan • Korea • Taiwan Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into • Intrinsic • Extrinsic Split by application, this report focuses on consumption, market share and growth rate of Mobile Semiconductor in each application, can be divided into • Smart Phones • Tablets • Other Global Mobile Semiconductor Market Research Report 2017 1 Mobile Semiconductor Market Overview 1.1 Product Overview and Scope of Mobile Semiconductor 1.2 Mobile Semiconductor Segment by Type 1.2.1 Global Production Market Share of Mobile Semiconductor by Type in 2015 1.2.2 Intrinsic 1.2.3 Extrinsic 1.3 Mobile Semiconductor Segment by Application 1.3.1 Mobile Semiconductor Consumption Market Share by Application in 2015 1.3.2 Smart Phones 1.3.3 Tablets 1.3.4 Other 1.4 Mobile Semiconductor Market by Region 1.4.1 North America Status and Prospect (2012-2022) 1.4.2 Europe Status and Prospect (2012-2022) 1.4.3 China Status and Prospect (2012-2022) 1.4.4 Japan Status and Prospect (2012-2022) 1.4.5 Korea Status and Prospect (2012-2022) 1.4.6 Taiwan Status and Prospect (2012-2022) 1.5 Global Market Size (Value) of Mobile Semiconductor (2012-2022) 2 Global Mobile Semiconductor Market Competition by Manufacturers 2.1 Global Mobile Semiconductor Production and Share by Manufacturers (2015 and 2016) 2.2 Global Mobile Semiconductor Revenue and Share by Manufacturers (2015 and 2016) 2.3 Global Mobile Semiconductor Average Price by Manufacturers (2015 and 2016) 2.4 Manufacturers Mobile Semiconductor Manufacturing Base Distribution, Sales Area and Product Type 2.5 Mobile Semiconductor Market Competitive Situation and Trends 2.5.1 Mobile Semiconductor Market Concentration Rate 2.5.2 Mobile Semiconductor Market Share of Top 3 and Top 5 Manufacturers 2.5.3 Mergers & Acquisitions, Expansion …. Figure Picture of Mobile Semiconductor Figure Global Production Market Share of Mobile Semiconductor by Type in 2015 Figure Product Picture of Intrinsic Table Major Manufacturers of Intrinsic Figure Product Picture of Extrinsic Table Major Manufacturers of Extrinsic Table Mobile Semiconductor Consumption Market Share by Application in 2015 Figure Smart Phones Examples Figure Tablets Examples Figure Other Examples Figure North America Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure Europe Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure China Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure Japan Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure Korea Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure Taiwan Mobile Semiconductor Revenue (Million USD) and Growth Rate (2012-2022) Figure Global Mobile Semiconductor Revenue (Million UDS) and Growth Rate (2012-2022) Table Global Mobile Semiconductor Capacity of Key Manufacturers (2015 and 2016) Table Global Mobile Semiconductor Capacity Market Share by Manufacturers (2015 and 2016) Figure Global Mobile Semiconductor Capacity of Key Manufacturers in 2015 Figure Global Mobile Semiconductor Capacity of Key Manufacturers in 2016 Table Global Mobile Semiconductor Production of Key Manufacturers (2015 and 2016) Table Global Mobile Semiconductor Production Share by Manufacturers (2015 and 2016) Figure 2015 Mobile Semiconductor Production Share by Manufacturers Figure 2016 Mobile Semiconductor Production Share by Manufacturers Table Global Mobile Semiconductor Revenue (Million USD) by Manufacturers (2015 and 2016) Table Global Mobile Semiconductor Revenue Share by Manufacturers (2015 and 2016) Table 2015 Global Mobile Semiconductor Revenue Share by Manufacturers Table 2016 Global Mobile Semiconductor Revenue Share by Manufacturers Table Global Market Mobile Semiconductor Average Price of Key Manufacturers (2015 and 2016) Figure Global Market Mobile Semiconductor Average Price of Key Manufacturers in 2015 Table Manufacturers Mobile Semiconductor Manufacturing Base Distribution and Sales Area Table Manufacturers Mobile Semiconductor Product Type Figure Mobile Semiconductor Market Share of Top 3 Manufacturers Figure Mobile Semiconductor Market Share of Top 5 Manufacturers Table Global Mobile Semiconductor Capacity by Regions (2012-2017) For more information, please visit http://www.wiseguyreports.com


News Article | November 16, 2016
Site: globenewswire.com

SHENZHEN, China, Nov. 16, 2016 (GLOBE NEWSWIRE) -- Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has been awarded Huawei’s Best Collaboration Partner Award and Core Partner Award. The awards were accepted by Bob Bruggeworth, president and CEO of Qorvo, during a formal ceremony at Huawei’s headquarters in Shenzhen, recognizing Qorvo’s contribution as an outstanding supplier of RF solutions to Huawei. The awards highlight Qorvo’s competitive strengths in supply chain execution and technology collaboration, along with outstanding local service and support. Qorvo supplies Huawei with multiple innovative RF solutions, including RF Fusion™, RF Flex™, highly integrated power amplifiers, antenna tuners, premium filters, and mobile Wi-Fi solutions, across Huawei’s most popular flagship and mid-tier smartphones. Qorvo provides broad support for Huawei’s expanding mobile device portfolio and also supplies an extensive selection of high performance components for Huawei's wireless infrastructure and cellular backhaul business. Bob Bruggeworth, president and CEO of Qorvo, said, “The entire Qorvo team is deeply gratified to receive Huawei’s Best Collaboration Partner Award and Core Partner Award. Huawei is an important longstanding customer for Qorvo. We are excited to provide Huawei the industry’s most advanced and highly integrated RF solutions to contribute to their continued global growth and success.” Qorvo’s high-performance RF solutions simplify design, reduce product footprint, conserve power, improve system performance and accelerate the adoption of carrier aggregation. Qorvo combines systems-level expertise, broad manufacturing scale, and the industry’s most comprehensive product and technology portfolio to help leading manufacturers accelerate the delivery of next-generation LTE, LTE-A, and IoT products. Qorvo's core RF solutions set the standard for next-gen connectivity, delivering unmatched integration and performance at the heart of the connected world. About Qorvo Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world. Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries. This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. Qorvo's business is subject to numerous risks and uncertainties, including variability in operating results, the inability of certain of our customers or suppliers to access their traditional sources of credit, our industry's rapidly changing technology, our dependence on a few large customers for a substantial portion of our revenue, our ability to implement innovative technologies, our ability to bring new products to market and achieve design wins, the efficient and successful operation of our wafer fabrication facilities, assembly facilities and test and tape and reel facilities, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, variability in manufacturing yields, industry overcapacity and current macroeconomic conditions, inaccurate product forecasts and corresponding inventory and manufacturing costs, dependence on third parties and our ability to manage channel partners and customer relationships, our dependence on international sales and operations, our ability to attract and retain skilled personnel and develop leaders, the possibility that future acquisitions may dilute our shareholders' ownership and cause us to incur debt and assume contingent liabilities, fluctuations in the price of our common stock, additional claims of infringement on our intellectual property portfolio, lawsuits and claims relating to our products, security breaches and other similar disruptions compromising our information and exposing us to liability, the impact of stringent environmental regulations, and the impact of integrating the businesses of RFMD and TriQuint. These and other risks and uncertainties, which are described in more detail in Qorvo's most recent Annual Report on Form 10-K and in other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.


This article describes a circularly polarized feed horn designed to feed shallow, prime-focus or offset-fed parabolic reflectors. Both circular polarization senses are available at two individual coaxial ports. The design provides good circularity, a very clean radiation pattern with excellent sidelobe suppression, outstanding isolation between ports, and needs no adjustments. An L-band example is presented, including both simulation and experimental results. The complete set of dimensions, not previously found in the literature for septum polarizers in circular waveguide, is provided for the practical engineer who desires to duplicate or scale this feed horn to other frequencies. © 2011 IEEE.


A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer.


A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration.


A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact layer, at least one gate on the semiconductor layer between source and drain, at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it, but the gates having different gate lengths.


Patent
Rfmd | Date: 2010-08-05

A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channel layer, the upper semiconductor layer comprising a recess; first and second ohmic contacts on the upper semiconductor layer on opposite sides of the recess, the ohmic contacts being connected together to form a first diode contact; a gate electrode within the recess, the gate electrode forming a second diode contact; wherein the area of the recess of the first diode covered by the first gate electrode is different to the area of the recess of the second diode covered by the second gate electrode.


A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided.

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