RF Micro Devices , was an American company that designed and manufactured high-performance radio frequency systems and solutions for applications that drive wireless and broadband communications. Headquartered in Greensboro, North Carolina, RFMD traded on the NASDAQ under the symbol RFMD. The Company was founded in Greensboro, North Carolina, in 1991. RF Micro has 3500 employees, 1500 of them in Guilford County, North Carolina.The company's products, predominantly radio frequency integrated circuits and packaged modules that utilize them, were used in cellular networks and mobile phones, for wireless connectivity such as wireless LAN, GPS and Bluetooth, in cable modems and cable TV infastructure, and for other applications including military radar. The most important applications in terms of sales were GaAs-based power amplifiers and antenna control solutions used in mobile phones , WiFi RF front-ends and components used in wireless infrastructure equipment.The company announced in February 2014 that it would merge with TriQuint Semiconductor. On January 2nd, 2015, RFMD and Triquint jointly announced that they had completed their merger of equals to form Qorvo , and that Qorvo would start trading on the NASDAQ Global Stock Market starting from that day. Wikipedia.
IEEE Microwave Magazine | Year: 2011
This issue of IEEE Microwave Magazine is focused on nonlinear vector measurements and associated behavioral models. These measurements can be seen as the higher-power extension of small-signal, vector network analyzer (VNA) measurements, where, at higher powers, there is energy transfer from the fundamental to the harmonics, and the signals are no longer sinusoidal. These behavioral models are black box models that empirically describe the behavior of a part or device with a look-up table. © 2011 IEEE. Source
IEEE Antennas and Propagation Magazine | Year: 2011
This article describes a circularly polarized feed horn designed to feed shallow, prime-focus or offset-fed parabolic reflectors. Both circular polarization senses are available at two individual coaxial ports. The design provides good circularity, a very clean radiation pattern with excellent sidelobe suppression, outstanding isolation between ports, and needs no adjustments. An L-band example is presented, including both simulation and experimental results. The complete set of dimensions, not previously found in the literature for septum polarizers in circular waveguide, is provided for the practical engineer who desires to duplicate or scale this feed horn to other frequencies. © 2011 IEEE. Source
Rfmd | Date: 2010-12-21
A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact layer, at least one gate on the semiconductor layer between source and drain, at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it, but the gates having different gate lengths.
Rfmd | Date: 2010-07-22
A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer.
Rfmd | Date: 2010-07-22
A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration.