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Greensboro, NC, United States

RF Micro Devices , was an American company that designed and manufactured high-performance radio frequency systems and solutions for applications that drive wireless and broadband communications. Headquartered in Greensboro, North Carolina, RFMD traded on the NASDAQ under the symbol RFMD. The Company was founded in Greensboro, North Carolina, in 1991. RF Micro has 3500 employees, 1500 of them in Guilford County, North Carolina.The company's products, predominantly radio frequency integrated circuits and packaged modules that utilize them, were used in cellular networks and mobile phones, for wireless connectivity such as wireless LAN, GPS and Bluetooth, in cable modems and cable TV infastructure, and for other applications including military radar. The most important applications in terms of sales were GaAs-based power amplifiers and antenna control solutions used in mobile phones , WiFi RF front-ends and components used in wireless infrastructure equipment.The company announced in February 2014 that it would merge with TriQuint Semiconductor. On January 2nd, 2015, RFMD and Triquint jointly announced that they had completed their merger of equals to form Qorvo , and that Qorvo would start trading on the NASDAQ Global Stock Market starting from that day. Wikipedia.


Kobayashi K.W.,RF Micro Devices
IEEE Journal of Solid-State Circuits | Year: 2012

This paper describes a GaN monolithic microwave integrated circuit (MMIC) cascode feedback amplifier design which achieves up to 8 W of output power and greater than +51 dBm OIP3 across a 250-3000-MHz decade bandwidth. The LNA also achieves 20 dB of flat-gain across the band. The design was fabricated with a 0.25-μm GaN HEMT technology with an fT ~ 50 GHz and a BVgd > 60 V. A 40-V 750-mA high-bias LNA design achieves an OIP3 of 51.9 dBm, P1dB of 38.5 dBm, and NF ~ 3 dB at 2 GHz. A 40-V 500-mA medium-bias LNA design achieves a lower NF ~ 2.5 dB an OIP3 of 48.4 dBm, and a P1dB of 36.8 dBm at the same frequency. At an optimum low-noise bias of 20 V and 300 mA, a NF ~ 0.96 dB, an OIP3 of 43.4 dBm, and a linear P1dB of ~32.2 dBm was also obtained. The combination of high OIP3 and low NF from these GaN MMIC LNA designs exceed that achieved by many state-of-the-art PHEMT, HBT, and HFET technologies for decade-BW MMIC amplifiers operating in the popular wireless and wire-line S- and C-band frequency ranges. The linear GaN LNA performance demonstrated here can enable new generations of software-defined and reconfigurable radios which require ultra-linearity over multiple octaves of bandwidth. © 1966-2012 IEEE. Source


Patent
RF Micro Devices | Date: 2015-09-29

Envelope power supply circuitry includes power converter circuitry and envelope tracking circuitry. The power converter circuitry is configured to receive an envelope power converter control signal and a supply voltage and provide an envelope power supply signal for an amplifier from the supply voltage and based on the envelope power converter control signal. The envelope tracking circuitry is coupled to the power converter circuitry. In a first mode of operation, the envelope tracking circuitry is configured to provide the envelope power converter control signal such that a gain of the amplifier remains substantially constant over a range of input power provided to the amplifier. In a second mode of operation, the envelope tracking circuitry is configured to limit the dynamic range of the envelope power supply signal.


Patent
RF Micro Devices | Date: 2015-08-06

An electrostatic discharge (ESD) protection circuit is disclosed. In this regard, an ESD protection circuit is provided to protect an integrated circuit (IC) from an ESD event. In one aspect, an ESD voltage detection circuitry activates an ESD clamping circuitry when an ESD voltage associated with faster voltage rise time is detected between a supply rail and a ground rail. In another aspect, an operation voltage detection circuitry deactivates the ESD clamping circuitry when an operation voltage associated with slower voltage rise time is detected between the supply rail and the ground rail. By differentiating the ESD voltage from the operation voltage based on respective voltage rise times, it is possible to prevent the ESD clamping circuitry from missing the ESD voltage associated with the faster voltage rise time or being falsely activated by the operation voltage associated with the slower voltage rise time.


Patent
RF Micro Devices | Date: 2015-01-19

An RF electronics module includes a grounding plate, a non-conductive substrate, a number of conductive vias, RF PA circuitry, and RF power detection circuitry. The non-conductive substrate is over the grounding plate. The conductive vias extend parallel to one another from a surface of the non-conductive substrate opposite the grounding plate through the non-conductive substrate to the grounding plate. The RF PA circuitry is coupled to the grounding plate through a first one of the conductive vias. The RF power detection circuitry is coupled to a second one of the conductive vias and configured to measure a signal induced in the second one of the conductive vias due to electromagnetic coupling with the first one of conductive vias. The first one of the conductive vias is adjacent to the second one of the conductive vias.


Patent
RF Micro Devices | Date: 2015-06-24

A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

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