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Gorbunov M.S.,National Research Nuclear University MEPhI | Dolotov P.S.,Russian Academy of Sciences | Antonov A.A.,Russian Academy of Sciences | Zebrev G.I.,National Research Nuclear University MEPhI | And 4 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

We study the design of different 6T and DICE SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X-ray, proton and heavy ion irradiation campaigns. The results obtained show that the number of affected bits depends not only on LET value, but also on the location of a strike. MCU patterns are discussed. The sensitive area is estimated as the whole SRAM cell area after deduction of the region between N+ and P+ guard rings. The results for normally incident particles clearly showed the advantages and trade-offs of different circuit and layout techniques. © 2014 IEEE.


Tyutnev A.P.,Moscow State Institute of Electronics and Mathematics | Ikhsanov R.Sh.,Research Institute of Scientific Instruments | Saenko V.S.,Moscow State Institute of Electronics and Mathematics | Pozhidaev E.D.,Moscow State Institute of Electronics and Mathematics
Polymer Science - Series A | Year: 2011

The time-of-flight technique is used to measure hole mobility in molecularly doped polycarbonate and polystyrene that contain both polar and weakly polar additives. The two versions of the technique with the bulk and surface generation of charge carriers under small-signal conditions are employed. Numerical calculations show that the time dependence of the transient-current curves obtained with the first version of the technique is in agreement with the theory of multiple trapping for an exponential energy distribution of traps. In the case of time-of-flight curves with surface generation, the run of the post-transit branch is likewise consistent with the theory, whereas this consistency is often violated for the pretransit branch of the curves. This result is due to the effect of the defective surface layer of a polymer, which is not taken into account in numerical calculations. The results show that the hole transport in the studied molecularly doped polymers is dispersive. An increase in the polarity of the polymer matrix and the dopant drastically decreases the hole mobility and, at the same time, increases its field and temperature dependence. © 2011 Pleiades Publishing, Ltd.


Tyutnev A.P.,Moscow State Institute of Electronics and Mathematics | Ikhsanov R.Sh.,Research Institute of Scientific Instruments | Nikitenko V.R.,National Research Nuclear University MEPhI | Saenko V.S.,Moscow State Institute of Electronics and Mathematics | Pozhidaev E.D.,Moscow State Institute of Electronics and Mathematics
Polymer Science - Series A | Year: 2010

A software package is proposed for the numerical solution of equations in terms of the multiple-trapping model with a Gaussian energy distribution of traps for the time-of-flight experiment. The results are compared with the literature data. The calculations are performed not only for the conventional initial condition corresponding to the case of a very thin generation layer but also for a variable thickness of the generation layer. © Pleiades Publishing, Ltd., 2010.


Useinov R.G.,Research Institute of Scientific Instruments | Dolgov I.I.,Ivan Dolgov Laboratory
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2015

An analytical model of the radiation-induced optical absorption in undoped optical fiber has been developed, based on self-Trapped holes light absorption. The model correctly describes the dependences obtained in our investigation of gamma-radiation induced fiber absorption for different temperatures in the 1450 1600 nm wavelength range. © 2015 IEEE.


Useinov R.G.,National Research Nuclear University MEPhI | Zebrev G.I.,National Research Nuclear University MEPhI | Emeliyanov V.V.,Research Institute of Scientific Instruments | Vatuev A.S.,Research Institute of Scientific Instruments
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments. © 2014 SPIE.


Zebrev G.I.,National Research Nuclear University MEPhI | Gorbunov M.S.,National Research Nuclear University MEPhI | Useinov R.G.,National Research Nuclear University MEPhI | Emeliyanov V.V.,Research Institute of Scientific Instruments | And 4 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2015

Mean and partial cross-section concepts and their connections to multiplicity and statistics of multiple cell upsets (MCUs) in highly-scaled digital memories are introduced and discussed. The important role of the experimental determination of the upset statistics is emphasized. It was found that MCU may lead to quasi-linear dependence of cross-sections on linear energy transfer (LET). A new form of function for interpolation of mean cross-section dependences on LET has been proposed. © 2014 Elsevier B.V.


Drosdetsky M.G.,National Research Nuclear University MEPhI | Zebrev G.I.,National Research Nuclear University MEPhI | Galimov A.M.,National Research Nuclear University MEPhI | Useinov R.G.,Research Institute of Scientific Instruments
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2015

Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed. © 2015 IEEE.


Emeliyanov V.V.,Research Institute of Scientific Instruments | Vatuev A.S.,Research Institute of Scientific Instruments | Useinov R.G.,Research Institute of Scientific Instruments
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2015

In this work an experimental evidence of a crucial role of the charge yield in the heavy ion induced single-event gate rupture (SEGR) process in SiO2 is reported. The results of SEGR cross-sections and charge yield measurements are presented for different heavy ions with atomic number Z from 26 to 83. The dependence of breakdown voltage on deposited energy was derived taking statistical variations in the heavy ion deposited energy into account. It is shown that the SEGR breakdown voltage is a linear function of residual charge remained after recombination in ion track. © 2015 IEEE.


Petrov A.S.,Research Institute of Scientific Instruments | Tapero K.I.,Research Institute of Scientific Instruments | Ulimov V.N.,Research Institute of Scientific Instruments
Microelectronics Reliability | Year: 2014

The degradation of BiCMOS operational amplifiers TLV2451CP under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. It is shown that studied devices are sensitive to both enhanced low dose rate sensitivity and time-dependent effects. Evidently the main reason for degradation of studied devices is build-up of the interface traps. Obtained results show possibility to develop an approach for total ionizing dose testing of BiCMOS devices considering low dose rate effects. © 2014 Elsevier Ltd. All rights reserved.


Zebrev G.I.,National Research Nuclear University MEPhI | Ishutin I.O.,National Research Nuclear University MEPhI | Useinov R.G.,Research Institute of Scientific Instruments | Anashin V.S.,JSC Institute of Space Device Engineering
IEEE Transactions on Nuclear Science | Year: 2010

We have proposed a test methodology based on successive experimental determination of angular cross-section dependence followed by averaging over full solid angle. Equivalence between phenomenological and chord-length distribution averaging for soft error rate computation is shown. Role of energy-loss straggling in subthreshold error rate enhancement has been revealed. Nuclear reaction induced error rate computation method providing crossover between BGR and chord-length approaches has been proposed. Possibility of inclusion of multiple bit error rate estimation in a unified computational scheme is shown. © 2010 IEEE.

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