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Gorbunov M.S.,National Research Nuclear University MEPhI | Dolotov P.S.,Russian Academy of Sciences | Antonov A.A.,Russian Academy of Sciences | Zebrev G.I.,National Research Nuclear University MEPhI | And 4 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

We study the design of different 6T and DICE SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X-ray, proton and heavy ion irradiation campaigns. The results obtained show that the number of affected bits depends not only on LET value, but also on the location of a strike. MCU patterns are discussed. The sensitive area is estimated as the whole SRAM cell area after deduction of the region between N+ and P+ guard rings. The results for normally incident particles clearly showed the advantages and trade-offs of different circuit and layout techniques. © 2014 IEEE. Source


Tyutnev A.P.,Moscow State Institute of Electronics and Mathematics | Ikhsanov R.Sh.,Research Institute of Scientific Instruments | Saenko V.S.,Moscow State Institute of Electronics and Mathematics | Pozhidaev E.D.,Moscow State Institute of Electronics and Mathematics
Polymer Science - Series A | Year: 2011

The time-of-flight technique is used to measure hole mobility in molecularly doped polycarbonate and polystyrene that contain both polar and weakly polar additives. The two versions of the technique with the bulk and surface generation of charge carriers under small-signal conditions are employed. Numerical calculations show that the time dependence of the transient-current curves obtained with the first version of the technique is in agreement with the theory of multiple trapping for an exponential energy distribution of traps. In the case of time-of-flight curves with surface generation, the run of the post-transit branch is likewise consistent with the theory, whereas this consistency is often violated for the pretransit branch of the curves. This result is due to the effect of the defective surface layer of a polymer, which is not taken into account in numerical calculations. The results show that the hole transport in the studied molecularly doped polymers is dispersive. An increase in the polarity of the polymer matrix and the dopant drastically decreases the hole mobility and, at the same time, increases its field and temperature dependence. © 2011 Pleiades Publishing, Ltd. Source


Drosdetsky M.G.,National Research Nuclear University MEPhI | Zebrev G.I.,National Research Nuclear University MEPhI | Galimov A.M.,National Research Nuclear University MEPhI | Useinov R.G.,Research Institute of Scientific Instruments
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2015

Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed. © 2015 IEEE. Source


Tyutnev A.P.,Moscow State Institute of Electronics and Mathematics | Ikhsanov R.Sh.,Research Institute of Scientific Instruments | Nikitenko V.R.,National Research Nuclear University MEPhI | Saenko V.S.,Moscow State Institute of Electronics and Mathematics | Pozhidaev E.D.,Moscow State Institute of Electronics and Mathematics
Polymer Science - Series A | Year: 2010

A software package is proposed for the numerical solution of equations in terms of the multiple-trapping model with a Gaussian energy distribution of traps for the time-of-flight experiment. The results are compared with the literature data. The calculations are performed not only for the conventional initial condition corresponding to the case of a very thin generation layer but also for a variable thickness of the generation layer. © Pleiades Publishing, Ltd., 2010. Source


Zebrev G.I.,National Research Nuclear University MEPhI | Ishutin I.O.,National Research Nuclear University MEPhI | Useinov R.G.,Research Institute of Scientific Instruments | Anashin V.S.,JSC Institute of Space Device Engineering
IEEE Transactions on Nuclear Science | Year: 2010

We have proposed a test methodology based on successive experimental determination of angular cross-section dependence followed by averaging over full solid angle. Equivalence between phenomenological and chord-length distribution averaging for soft error rate computation is shown. Role of energy-loss straggling in subthreshold error rate enhancement has been revealed. Nuclear reaction induced error rate computation method providing crossover between BGR and chord-length approaches has been proposed. Possibility of inclusion of multiple bit error rate estimation in a unified computational scheme is shown. © 2010 IEEE. Source

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