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Kustov M.,University of Kiel | Kustov M.,Imperial College London | Grechishkin R.,Tver State University | Gusev M.,Research Institute of Materials Science and Technology | And 2 more authors.
Advanced Materials | Year: 2015

A new method of imaging of temperature distributions is presented. The method is based on the use of a BiLu2Fe4GaO12 ferrimagnetic garnet layer as a pyro-magneto-optical detection layer. Thermal imaging with high sensitivity, with micrometer spatial and with millisecond temporal resolution is demonstrated in a contactless read-out scheme. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

Eremin V.K.,RAS Ioffe Physical - Technical Institute | Naletko A.S.,RAS Ioffe Physical - Technical Institute | Verbitskaya E.M.,RAS Ioffe Physical - Technical Institute | Eremin I.V.,RAS Ioffe Physical - Technical Institute | Egorov N.N.,Research Institute of Materials Science and Technology
Semiconductors | Year: 2011

Development of silicon edgeless detectors started in 2004 and was motivated by preparations for the total elastic and diffractive cross-section measurement (TOTEM) experiment at the Large Hadron Collider (LHC) at CERN. In the context of this experiment, it would be necessary to detect protons scattered at ultimately small angles with respect to the LHC proton beam, which brings about a limitation imposed on the maximum distance between the beam and the sensitive region of the detector. In order to solve this problem, a new type of silicon detector (edgeless detectors) was developed; these detectors have the structure, which controls the distribution of the current near the edge of the p-n junction. In this paper we report the results of studying the distribution of the potential and an electric field in the region of the cut edge in the silicon edgeless detectors; the models, which account for the obtained results, as well as their consistency with current-voltage characteristics of silicon edgeless detectors developed for the TOTEM experiment, are discussed. © 2011 Pleiades Publishing, Ltd. Source

Novikov S.N.,Moscow Institute of Electronic Technology | Sukhorukov O.G.,Moscow Institute of Electronic Technology | Timoshenkov S.P.,Moscow Institute of Electronic Technology | Minaev V.S.,Research Institute of Materials Science and Technology | Sukhorukov D.O.,Moscow Institute of Electronic Technology
Russian Journal of General Chemistry | Year: 2012

Variation of thickness of specimens of single crystalline silicon Si(100) prepared by scribing of the water of 100 mm diameter to parts of smaller size under atmospheric conditions is studied. It is shown that the thickness of specimens having small surface (∼1 cm 2) decreases after scribing by 0.8-1.0% (with the error of measurements < 0.3%). The observed decrease in the thickness is explained by the effect of sorption of vapors of atmospheric moisture in micropores with the decrease in the external surface of specimens of Si(100) (the sorbostriction phenomenon). © 2012 Pleiades Publishing, Ltd. Source

Verbitskaya E.V.,RAS Ioffe Physical - Technical Institute | Eremin V.K.,RAS Ioffe Physical - Technical Institute | Safonova N.N.,RAS Ioffe Physical - Technical Institute | Eremin I.V.,RAS Ioffe Physical - Technical Institute | And 3 more authors.
Semiconductors | Year: 2011

A model of the potential distribution in voltage terminating structures (VTSs) with floating p +-n junction rings in silicon radiation detectors is proposed. The model is based on experimental current-voltage characteristic of interring gaps, measured for detectors based on high-resistivity silicon with resistivities from 1 to 25 kΩ cm. The physical basis of the model is the injection principle of current flow through VTS interring gaps, which becomes possible at a certain electric field distribution in space charge regions of p +-n junctions of the sensitive contact and rings. It is shown that the injection current flow is a universal operation principle of the VTS with floating rings, which leads to rigid stabilization of potentials of individual rings. As a result, it becomes possible to divide the potential irrespective of the semiconductor material resistivity. © 2011 Pleiades Publishing, Ltd. Source

Shemukhin A.A.,Moscow State University | Balakshin Y.V.,Moscow State University | Chernysh V.S.,Moscow State University | Golubkov S.A.,Research Institute of Materials Science and Technology | And 2 more authors.
Semiconductors | Year: 2014

The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si+ ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed. © 2014 Pleiades Publishing, Ltd. Source

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