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El amrani A.,Research Center in Semiconductor Technology for Energetic | Si Kaddour R.,Research Center in Semiconductor Technology for Energetic | Maoudj M.,Research Center in Semiconductor Technology for Energetic | El Kechai A.,Research Center in Semiconductor Technology for Energetic | Mezghiche S.,Research Center in Semiconductor Technology for Energetic
Current Applied Physics | Year: 2015

To anticipate the initial phosphorus diffusion parameters of silicon solar cells process fabrication, we report in this paper an overview of our experiments on silicon n+-emitters passivation by means of rapid thermal silicon oxide/silicon nitride stack. The process-induced changes have been evaluated and explained. We found that 900°C and 80 s were the appropriate process parameters to grow 10 nm silicon oxide. Investigation of the effect of this oxidation on n+ multicrystalline silicon emitters revealed a large decrease (more than 25%) of the sheet resistance and around 12% increase of the junction depth. The experiments also revealed that the passivation effect of the optimal silicon oxide/silicon nitride stack is efficient only for higher emitter quality. In addition, we found that this stack reduces the surface reflection more than the optimal single silicon nitride layer. © 2015 Elsevier B.V. All rights reserved. Source


El Amrani A.,Research Center in Semiconductor Technology for Energetic | Bekhtari A.,Research Center in Semiconductor Technology for Energetic | El Kechai A.,Research Center in Semiconductor Technology for Energetic | Menari H.,Research Center in Semiconductor Technology for Energetic | And 2 more authors.
Vacuum | Year: 2015

In this study we investigated the deposition parameters of a PECVD silicon nitride (SiN) film leading to an efficient passivation of multicrystalline silicon solar cells. The parameters investigated were the temperature, the power and the refractive index through the gas process flow rate ratio SiH4/NH3.Using a symmetrical structure SiN/Si/SiN and Quasi-Steady-State Photo-Conductance (QSSPC) characterization we found that 380°C and 4500W are the optimal temperature and optimal power, respectively. The optimal refractive index was determined using a method which encompasses optical and electrical properties of SiN films deposited on multicrystalline silicon solar cells. This method, based on the calculation of the short circuit current densities, revealed that the optimal refractive index is 1.9. © 2015 Elsevier Ltd. Source


Boumaour M.,Research Center in Semiconductor Technology for Energetic | Bahfir A.,Research Center in Semiconductor Technology for Energetic | Sali S.,Research Center in Semiconductor Technology for Energetic | Kermadi S.,Research Center in Semiconductor Technology for Energetic | And 2 more authors.
2014 North African Workshop on Dielectric Materials for Photovoltaic Systems, NAWDMPV 2014 | Year: 2014

N+ transparent conductor oxides (TCO's) can be a valuable and low-cost alternative to conventional thermally diffused emitter of silicon based solar cells. With reduced resistivities by appropriate doping and considering lattice mismatch and energy band offsets at the interface with p-silicon substrate, predictive study by numerical simulation shows comparable performance between ZnS:Al and TiO2:Nb with conversion efficiencies >16%. Furthermore, a back surface field achieved by a thin Sb2Te3 can enhance the efficiency with values higher than 18.5%. © 2014 IEEE. Source

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