Khelifati N.,Research Center in Semi conductors Technology for the Energetic |
Khelifati N.,University of Boumerdès |
Bouhafs D.,Research Center in Semi conductors Technology for the Energetic |
Abaidia S.-E.-H.,University of Boumerdès |
And 2 more authors.
Springer Proceedings in Physics | Year: 2014
In this present contribution, we investigate the effect of extended phosphorus diffusion (PD) gettering on the electrical quality of p-type HEM mc-Si wafers. The study was made for three sets of wafers taken from top, center and bottom of the same ingot. The gettering process was performed through two annealing plateaus; the first is standard and the second is extended at different temperatures. Wafers characterization was mainly made by quasi-steady state photoconductance (QSSPC) technique. The obtained results indicated that the gettering effectiveness mainly depends on the position of wafers in the ingot and also the temperature of gettering process. Furthermore, appropriate modeling of QSSPC lifetime curves using Hornbeck–Haynes model reveals that the origin of the electrical property improvement is due to the reduction of the density of specific metallic impurities in the bulk. © Springer International Publishing Switzerland 2014.