Ahn J.H.,Korea University |
Ahn J.H.,Research Center for Time domain Nano functional Devices |
Lee J.-H.,Research Center for Time domain Nano functional Devices |
Lee J.-H.,Sungkyunkwan University |
And 8 more authors.
IEICE Transactions on Electronics
We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si 3N4 substrates is higher (460- 470°C) than that of the case of normal Si substrates (440°C). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the guided growth over metal structures is also shown to be possible. Selective growth of SiNWs on pre-patterned surfaces opens up the possibility of self-aligning SiNWs for the integration of complex device structures. Copyright © 2010 The Institute of Electronics, Information and Communication Engineers. Source