Research and Production Complex Technological Center

Zelenograd, Russia

Research and Production Complex Technological Center

Zelenograd, Russia

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Amelichev V.V.,Research and Production Complex Technological Center | Saurov A.N.,Research and Production Complex Technological Center | Aravin V.V.,Federal State Institution V h 35533 | Reznev A.A.,Federal State Institution V h 68240 | And 2 more authors.
Russian Microelectronics | Year: 2013

The design and technology of magnetic semiconductor elements of wireless magnetoresistive microsystems for magnetic field measurements are proposed and the results of the investigations of a highly sensitivity magnetoresistive converter with magnetic field concentrators are presented. The characteristics of the developed measuring amplifier for operation with a signal from a low-resistance magnetoresistive bridge with a certain unbalance value are reported. The technology for fabricating magnetic semiconductor ICs based on thin-film magnetoresistive structures is described. © 2013 Pleiades Publishing, Ltd.


Kozlov A.V.,National Research University Moscow Institute of Electronic Engineering | Korolev M.A.,National Research University Moscow Institute of Electronic Engineering | Cheremisinov A.A.,National Research University Moscow Institute of Electronic Engineering | Zhukov A.A.,Research and Production Complex Technological Center | Tikhonov R.D.,Research and Production Complex Technological Center
Russian Microelectronics | Year: 2013

We experimentally studied the sensitivity and initial voltage offset between the collectors of the lateral dual-collector n-p-n magnetotransistor with the base formed in a well that serves as a third collector at a lowered rate of the surface recombination in the base. The operation mode and parameters of the device are determined by its connection circuit. We demonstrate that the voltage magnetosensitivity of the device attains 11 V/T. © 2013 Pleiades Publishing, Ltd.


Krasyukov A.Yu.,Moscow Institute of Electronic Technology | Tikhonov R.D.,Research and Production Complex Technological Center | Cheremisinov A.A.,Moscow Institute of Electronic Technology
Russian Microelectronics | Year: 2013

The effect of sensitivity inversion of magnetotransistors is studied using an instrument-technological simulation. The comparison of simulation results and experimental data enabled us to determine relations between sensitivity signs and distributions of injected charge carrier flows in structures of bipolar dual-collector lateral n-p-n magnetotransistors, the base of which is a diffused well (3CBMTBW). It is determined that the 3CBMTBW magnetotransistor with a small surface recombination velocity at the silicon-silicon dioxide boundary and with extraction of injected electrons by a base-well (substrate) p-n junction that is distant from the surface enables us to obtain a high sensitivity of 11 V/T at a good reproducibility and stability of parameters. © 2013 Pleiades Publishing, Ltd.


Gromov D.G.,National Research University of Electronic Technology | Koz'min A.M.,National Research University of Electronic Technology | Shulyat'ev A.S.,National Research University of Electronic Technology | Polomoshnov S.A.,Research and Production Complex Technological Center | And 2 more authors.
Semiconductors | Year: 2013

The results of studying ZnO:Ga thin films produced by magnetron-assisted sputtering of the corresponding target in argon and in argon with a 5% hydrogen content without heating of the substrate are reported. It is shown that the resistivity and temporal stability of the ZnO:Ga films substantially depend on their thickness, exposure to solar radiation, and influence of the environment. It is found that doping the ZnO:Ga thin films with hydrogen provides a means for greatly decreasing their resistivity, whereas the degree of temporal stability of the films can be improved using a coating protecting them from the influence of the gas environment. © 2013 Pleiades Publishing, Ltd.


Bulyarskii S.V.,Ulyanovsk State University | Basaev A.S.,Research and Production Complex Technological Center
Physics of the Solid State | Year: 2015

The formation of clusters of catalysts for the growth of carbon nanotubes has been investigated experimentally and theoretically. An expression for the size distribution of monomolecular and globular clusters formed upon coalescence has been obtained. It has been shown that the maximum of the distribution is determined by the effective surface tension coefficient. The effective surface tension coefficients for clusters formed in the gas phase and on the substrate have been estimated. It has been found that the effective surface tension coefficient for a substrate based on silicon oxide is less than that of the clusters formed on silicon and in the gas phase. In the case of a globular cluster, the effective surface tension coefficient tends to the characteristic value for the bulk material. © 2015, Pleiades Publishing, Ltd.

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