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Galchina N.A.,Research and production Center Open Company | Gofshtein-Gardt A.L.,Research and production Center Open Company | Kogan L.M.,Research and production Center Open Company | Soshchin N.P.,Federal State Unitary Enterprise
Light and Engineering | Year: 2011

The article presents high values (120 lm/W at the current 350mA) of luminous efficacy reached by the authors for white light emitting diodes (WLED). WLEDs of 1.1; 3.2 and 6.6 W are developed with luminous flux up to 500 lm containing a printed-circuit board with aluminum or copper base. Based on these WLEDs, light-emitting diode modules of linear and square configurations with luminous flux up to 1200 lm and luminous efficacy 85 lm/W are manufactured. Source


Galchina N.A.,Research and production Center Open Company | Kogan L.M.,Research and production Center Open Company | Kolesnikov A.A.,Research and production Center Open Company | Portnyagin Y.A.,Research and production Center Open Company | Rassokhin I.T.,Research and production Center Open Company
Light and Engineering | Year: 2011

The article informs of the fi rst domestic (Russian) development of high power ultra-violet emitting diodes (UVD) with emitting angle (2 Θ0,5) from 5 to 40°, peak wave length of 360-370, 380-385 and 395-405 nm and fl ux of 45-60, 90-105 and 240 -270 mW accordingly. UVD maximum intensity with 2 Θ0,5 = 5° reaches 2.7-3.3 W/sr. Source

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