Entity

Time filter

Source Type


Kerli S.,Kahramanmaras Sutcu Imam University | Alver U.,Kahramanmaras Sutcu Imam University | Yaykasli H.,Research and Development Center for University Industry and Public Relations
Applied Surface Science | Year: 2014

NiO and Indium doped (3, 5, 8 and 10 at%) NiO thin films were produced on glass substrates at 400 °C by airbrush spraying method using a solution of nickel nitrate hexahydrate. The effect of Indium (In) concentration on the structural, optical and transport properties of NiO thin films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectral transmittance and linear four-probe resistivity. From The X-ray diffraction pattern, it is observed that pure, 3% and 5 at% In doped NiO films have a cubic structure, but 8 and 10 at% doped films have an amorphous structure. Optical measurements show that the band gap energies of the films vary with indium concentrations. Moreover, It has been observed that the doping of NiO films with In increases the electrical resistivity. © 2014 Elsevier B.V. All rights reserved. Source


Alver U.,Kahramanmaras Sutcu Imam University | Alver U.,International University of Sarajevo | Yaykasli H.,Research and Development Center for University Industry and Public Relations | Kerli S.,Kahramanmaras Sutcu Imam University | Tanriverdi A.,Kahramanmaras Sutcu Imam University
International Journal of Minerals, Metallurgy and Materials | Year: 2013

Boron-doped NiO thin films were prepared on glass substrates at 400 ° C by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated. © University of Science and Technology Beijing and Springer-Verlag Berlin Heidelberg 2013. Source


Kerli S.,Kahramanmaras Sutcu Imam University | Alver U.,Kahramanmaras Sutcu Imam University | Alver U.,International University of Sarajevo | Yaykasli H.,Research and Development Center for University Industry and Public Relations | And 3 more authors.
Asian Journal of Chemistry | Year: 2013

Fluorine doped ZnO particles were prepared by a simple hydrothermal technique in an autoclave at 200 °C for 4 h. Obtained particles were annealed at 600 °C and their physical properties were investigated. X-Ray diffraction measurements reveal that ZnO:F particles contain a wurtzite and simonkolleite structure. Thermal gravimetric measurements show that thermal decomposition of simonkolleite occurs at above 600 °C. SEM images of particles show that the morphologies change from a flower-like structure to a rose-like structure with increasing fluorine concentration. Optical measurements revealed that absorbance edge values of fluorine doped ZnO particles are blue shifted. Source

Discover hidden collaborations