RENA GmbH | Date: 2010-05-18
A method and a device for electroplating and electrolytically etching plate-shaped or strip-shaped material in continuous installations or bath installations having rotating transport and contact structures along the conveyor belt. The current is fed to the material in the center, i.e. in the useful zone, thereby obtaining a layer thickness distribution which is at least as good as when the current is supplied from both edges. The invention further allows material of any formats of width and different contours to be electrolytically treated in any order.
RENA GmbH | Date: 2011-08-12
RENA GmbH | Date: 2011-02-10
The present invention relates to the field of wet chemical treatment of silicon substrates. The invention particularly relates to a method for the determination of the concentration of nitric acid in aqueous process solutions as being used for the treatment of substrates such as those made from silicon. The method is based on the determination of nitrate by means of UV spectroscopy/photometry with the aid of eliminating agents which effectively remove disturbing absorptions caused by other substances. Therein, the concentration of nitrate corresponds to that of nitric acid. According to the invention, a robust method is proposed by means of which the content of nitric acid in acid mixtures can be determined very precisely, and in fact likewise in fresh as well as in acid mixtures that have been used according to their intended purpose.
RENA GmbH | Date: 2012-06-01
The invention relates to a method for the conditioning of flat objects such as silicon substrates. The objects, obtained by sawing from a block form a comb like structure by being fixed with one edge to a plate shaped fixation apparatus, are conditioned by conventional rinsing, separating and wet chemical treatment, wherein the treatment takes place before the separation of the sawed substrates from the fixation apparatus. An apparatus which is suitable for carrying out the method has two regions arranged parallel to the apparatus longitudinal axis (L) and above one another, wherein the upper region is configured as an adapter region (
Agency: Cordis | Branch: FP7 | Program: CP | Phase: ENERGY.2010.10.2-1 | Award Amount: 3.90M | Year: 2010
The current technologies to produce photovoltaic modules exhibit features, which prevent cost-reduction to below 0,5/Wp: - Sawing/Wafering and Module assembly is costly and material intensive for wafer solar cells - Efficiency is comparatively low for classical thin-film solar cells (CdTe, CIS, a-Si/c-Si, dye, organic). One approach to avoid both disadvantages is the so-called crystalline Si thin-film lift-off approach, where thin c-Si layers are stripped from a silicon wafer. This approach has the potential to reach > 20% efficient solar cells, however handling issues stop quick progress so far. The basic idea of the current project is to enable the use of lift-off films in a nearly handling-free approach, to avoid limitations by handling issues. The technological realization has the following key features and steps: - Continuous separation of a very thin (< 10 m) c-Si foil from the circumference of a monocrystalline silicon ingot - Attachment to a high-temperature stable substrate of large area (e.g. graphite, Sintered Silicon, or ceramics), which can also serve as module back side. - High-temperature re-organisation of the silicon foil followed by in-situ epitaxial thickening (~40 m base thickness) in an in-line chemical vapour deposition reactor, including pn-junction formation - Processing of high-efficiency solar cells and formation of integrated interconnected high-voltage modules - Encapsulating into a module (glass / encapsulant only if needed) The resulting module to be demonstrated in R2M-Si has a cost potential around 0.55 /Wp, at 18% module efficiency and thus low Balance-of-System cost. Future enhanced R2M-Si modules can exceed even 20% efficiency, at costs below 0.5 /Wp. The project shall demonstrate the feasibility of the most critical process steps like continuous layer detachment, bonding to a carrier substrate, high-quality epitaxy, handling-free solar cell processing and module integration. As a deliverable, a mini module of higher than 18% efficiency shall be prepared.