Redsolar New Energy Technology Co.

Zhongshan, China

Redsolar New Energy Technology Co.

Zhongshan, China
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Zhang Y.,Beijing University of Technology | Zhang Y.,Redsolar New Energy Technology Co. | Wang Q.,Beijing University of Technology | Wang Q.,Redsolar New Energy Technology Co. | And 8 more authors.
Japanese Journal of Applied Physics | Year: 2017

AlGaInP is a prospectively valuable material for high-efficiency lattice-matched tandem AlGaInP/AlGaInAs/GaAs/GaInNAs/Ge (2.05/1.7/1.4/1.0/0.7 eV) five-junction solar cells. We examine the optical properties of AlGaInP materials with trimethylantimony (TMSb) incorporated at various flow speeds. Then, we apply Al0.1GaInP with TMSb incorporated at 15.6 μmol/min, whose band gap is 2.04 eV, to the fabrication of an AlGaInP/Ge double-junction (DJ) solar cell. Moreover, we analyze the photovoltaic current density-voltage (J-V) characteristics, external quantum efficiencies (EQEs), and internal quantum efficiencies (IQEs) of DJ cells under a 1-sun AM0 spectrum. As elsewhere, Sb incorporation improves the crystal quality of AlGaInP and the fill factor of the DJ solar cell; on the other hand, it increases the band gap of AlGaInP. Al0.08GaInP with Sb incorporation shows the same absorption edge of EQE as Al0.1GaInP without Sb incorporation, and Jsc increases approximately by 15.3% owing to the reduction of 2% Al composition. © 2017 The Japan Society of Applied Physics.


Zhang Y.,Beijing University of Technology | Zhang Y.,Redsolar New Energy Technology Co. | Wang Q.,Beijing University of Technology | Zhang X.-B.,Redsolar New Energy Technology Co. | And 5 more authors.
Chinese Physics Letters | Year: 2016

We directly grow a lattice matched GaInP/GaInAs/GaInNAs/Ge (1.88 eV/1.42 eV/1.05 eV/0.67 eV) four-junction (4J) solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GaInNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GaInNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GaInNAs sub cell exceeds 80%, and its current density reaches 11.24mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GaInP/GaInAs/Ge solar cells under the 1 sun AM0 spectrum. © 2016 Chinese Physical Society and IOP Publishing Ltd.


Zhang Q.-L.,Beijing University of Technology | Yao S.,Beijing University of Technology | Yang C.-B.,Redsolar New Energy Technology Co. | Zhang Y.,Redsolar New Energy Technology Co. | And 3 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2016

In order to study the GaInAs/GaAsP multiple quantum well solar cells (MQW-SC) with different periods, double-junction solar cell samples with different periods quantum well (QW) and reference sample without QW were grown by metalorganic chemical vapor deposition (MOCVD). The crystal quality of the samples was judged by high resolution X-ray diffraction (HXRD) and high resolution transmission electron microscopy (TEM). I-V curves and external quantum efficiency (EQE) of samples were measured under AM0 (1×) spectra. Relative to the non-QW sample, the absorption spectra of QW samples extend from 890 nm to 954 nm, the highest external quantum efficiency of the extending spectra achieves 75.18%, the conversion efficiency increases by 2.77%. With the increased periods of quantum wells structure, the response of the extending spectra and the longer wavelengths (700-890 nm) in the conventional spectra increase, while in the shorter wavelengths (300-700 nm) the response has a fall. Eventually, the short circuit current and the efficiency of the cells are improved and finally tend to be steady. © 2016, Science Press. All right reserved.


Dai M.,Beijing University of Technology | Yao S.,Beijing University of Technology | Chen B.,Beijing University of Technology | Yang G.,Beijing University of Technology | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

At present, the conversion efficiency of high concentrated photovoltaic modules is about 30%, most of the solar energy is converted into heat, which will result in solar cell temperature rise and subsequent module efficiency decrease. For existing module with large solar cell, the heat source is concentrated and additional cooling fins must be used, resulting in high system complexity and cost rise. In order to lower the cost of photovoltaic, we developed distributed cooling type module with simple structure. This paper depicts a distributed cooling design for high concentrated photovoltaic module, as well as the thermal simulation of this design with analysis software. Module prototype was also made to test the actual effect. The final outdoor results showed high consistency with the simulation results. The chip temperature can be lower than 45°C and the module outdoor working efficiency is higher than 26%, and lower temperature provide a guarantee of long-term reliability to module packaging material. © 2015 SPIE.


Chang X.-Y.,Beijing University of Technology | Yao S.,Beijing University of Technology | Zhang Q.-L.,Beijing University of Technology | Zhang Y.,Beijing University of Technology | And 4 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2016

At present, solar cells are the main sources for spacecrafts. For a long time the bulk of the space power installations has been the solar arrays based on single junction silicon and gallium arsenide solar cells. In recent years a trend has been the active use of triple-junction GaAs solar cell with higher efficiency instead of single junction solar cells. One of the most important characteristics of solar cells used in spacecrafts is the resistance to radiation damages caused by high energy particles of the near-Earth space. According to the spectral response of triple-junction GaAs solar cell and the damage characteristics of the current under the condition of electron irradiation, the physical mechanism of cell attenuation can be determined: the current degradation originates mainly from the GaInAs subcells. These damages form additional centers of nonradiative recombination, which results in the reduction of the minority charge carrier diffusion lengths and in degradation of the solar cells photocurrent. The radiation damage caused by the electron irradiation will shorten the diffusion length of the base region and affect the collection of photo generated carriers. The ways of improving absorption of long wavelength light in GaInAs subcells with a thin base in using the distributed Bragg reflector can be investigated by the mathematical simulation method based on calculating the light propagation in a multilayer structure by means of the TFCalc software which can design optical structure. To estimate the validity of these methods for solar cells structures with distributed Bragg reflector, the spectral dependences of the photoresponse and the reflection coefficient with different base thickness values are calculated and compared with experimental results. Based on the physical mechanism of the degradation, the thickness of middle subcell base layer is reduced, and an appropriate structure of the distributed Bragg reflector is simulated by the TFCalc software. As a result, the new structure solar cells are that the thickness of the base layer is 1.5 μm compared with the different middle subcell thickness values, and the distributed Bragg reflector structure with 15 paris of the Al0.1Ga0.9As/Al0.9Ga0.1As with 850 nm central wavelength is embedded in the middle subcell of the base layer, the distributed Bragg reflector has a highest reflectivity of more than 97% in the actual test, and a bandwidth of 94 nm, which can satisfy design requirement. After irradiating the new structure of solar cells, the decay of its short-circuited current is reduced by 50% compared with that of the original structure, and the remaining efficiency factor is increased by 2.3%. © 2016 Chinese Physical Society.


Zhang X.,Redsolar New Energy Technology Co. | Chen B.,Redsolar New Energy Technology Co. | Chen B.,Beijing University of Technology | Pan X.,Redsolar New Energy Technology Co. | And 6 more authors.
Journal of Physics D: Applied Physics | Year: 2015

GaInNAs materials with narrow bandgaps of 1.10 eV have been grown on a Ge substrate by metalorganic chemical vapor deposition to fabricate GaInNAs/Ge (1.10/0.67 eV) double-junction solar cells. We have studied the photovoltaic characteristics and the external quantum efficiencies of the double-junction cells with various annealing conditions and different GaInNAs base layer thicknesses. The best external quantum efficiency is obtained from the double-junction cell with a 1170 nm thick GaInNAs base layer annealed at 675 °C for 30 min. Under AM1.5G illumination, the best double-junction cell has a short circuit current density (J SC) as 23.63 mA cm-2, which is dominated by the J SC of the GaInNAs subcell. © 2015 IOP Publishing Ltd.

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