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This report studies Semiconductor Detector in Global market, especially in North America, Europe, China, Japan, Korea and Taiwan, focuses on top manufacturers in global market, with production, price, revenue and market share for each manufacturer, covering  Micron Semiconductor  Rigaku  Redlen Technologies  Centronic  Allegro MicroSystems LLC  AOS  Cree  Diodes  Bruker Daltonics  New Cosmos  SENSITRON  General Monitors  Henan Hanwei Electronics Market Segment by Regions, this report splits Global into several key Regions, with production, consumption, revenue, market share and growth rate of Semiconductor Detector in these regions, from 2011 to 2021 (forecast), like  North America  Europe  China  Japan  Korea  Taiwan Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into  Surface Barrier Detector  Lithium Drifting Detector  High Purity Germanium Detector Split by application, this report focuses on consumption, market share and growth rate of Semiconductor Detector in each application, can be divided into  Nuclear Power Plant  Astrophysical  Safety Inspection  Other 1 Semiconductor Detector Market Overview  1.1 Product Overview and Scope of Semiconductor Detector  1.2 Semiconductor Detector Segment by Type  1.2.1 Global Production Market Share of Semiconductor Detector by Type in 2015  1.2.2 Surface Barrier Detector  1.2.3 Lithium Drifting Detector  1.2.4 High Purity Germanium Detector  1.3 Semiconductor Detector Segment by Application  1.3.1 Semiconductor Detector Consumption Market Share by Application in 2015  1.3.2 Nuclear Power Plant  1.3.3 Astrophysical  1.3.4 Safety Inspection  1.3.5 Other  1.4 Semiconductor Detector Market by Region  1.4.1 North America Status and Prospect (2011-2021)  1.4.2 Europe Status and Prospect (2011-2021)  1.4.3 China Status and Prospect (2011-2021)  1.4.4 Japan Status and Prospect (2011-2021)  1.4.5 Korea Status and Prospect (2011-2021)  1.4.6 Taiwan Status and Prospect (2011-2021)  1.5 Global Market Size (Value) of Semiconductor Detector (2011-2021) 2 Global Semiconductor Detector Market Competition by Manufacturers  2.1 Global Semiconductor Detector Production and Share by Manufacturers (2015 and 2016)  2.2 Global Semiconductor Detector Revenue and Share by Manufacturers (2015 and 2016)  2.3 Global Semiconductor Detector Average Price by Manufacturers (2015 and 2016)  2.4 Manufacturers Semiconductor Detector Manufacturing Base Distribution, Sales Area and Product Type  2.5 Semiconductor Detector Market Competitive Situation and Trends  2.5.1 Semiconductor Detector Market Concentration Rate  2.5.2 Semiconductor Detector Market Share of Top 3 and Top 5 Manufacturers  2.5.3 Mergers & Acquisitions, Expansion 3 Global Semiconductor Detector Production, Revenue (Value) by Region (2011-2016)  3.1 Global Semiconductor Detector Production by Region (2011-2016)  3.2 Global Semiconductor Detector Production Market Share by Region (2011-2016)  3.3 Global Semiconductor Detector Revenue (Value) and Market Share by Region (2011-2016)  3.4 Global Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.5 North America Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.6 Europe Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.7 China Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.8 Japan Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.9 Korea Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016)  3.10 Taiwan Semiconductor Detector Production, Revenue, Price and Gross Margin (2011-2016) 4 Global Semiconductor Detector Supply (Production), Consumption, Export, Import by Regions (2011-2016)  4.1 Global Semiconductor Detector Consumption by Regions (2011-2016)  4.2 North America Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016)  4.3 Europe Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016)  4.4 China Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016)  4.5 Japan Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016)  4.6 Korea Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016)  4.7 Taiwan Semiconductor Detector Production, Consumption, Export, Import by Regions (2011-2016) 7 Global Semiconductor Detector Manufacturers Profiles/Analysis  7.1 Micron Semiconductor  7.1.1 Company Basic Information, Manufacturing Base and Its Competitors  7.1.2 Semiconductor Detector Product Type, Application and Specification  7.1.2.1 Type I  7.1.2.2 Type II  7.1.3 Micron Semiconductor Semiconductor Detector Production, Revenue, Price and Gross Margin (2015 and 2016)  7.1.4 Main Business/Business Overview  7.2 Rigaku  7.2.1 Company Basic Information, Manufacturing Base and Its Competitors  7.2.2 Semiconductor Detector Product Type, Application and Specification  7.2.2.1 Type I  7.2.2.2 Type II  7.2.3 Rigaku Semiconductor Detector Production, Revenue, Price and Gross Margin (2015 and 2016)  7.2.4 Main Business/Business Overview  7.3 Redlen Technologies  7.3.1 Company Basic Information, Manufacturing Base and Its Competitors  7.3.2 Semiconductor Detector Product Type, Application and Specification  7.3.2.1 Type I  7.3.2.2 Type II  7.3.3 Redlen Technologies Semiconductor Detector Production, Revenue, Price and Gross Margin (2015 and 2016)  7.3.4 Main Business/Business Overview  7.4 Centronic  7.4.1 Company Basic Information, Manufacturing Base and Its Competitors  7.4.2 Semiconductor Detector Product Type, Application and Specification  7.4.2.1 Type I  7.4.2.2 Type II


Wilson M.D.,Rutherford Appleton Laboratory | Cernik R.,University of Manchester | Chen H.,Redlen Technologies | Hansson C.,University of Manchester | And 4 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2011

A new small pixel cadmium zinc telluride (CZT) detector has been developed for hard X-ray spectroscopy. The X-ray performance of four detectors is presented and the detectors are analysed in terms of the energy resolution of each pixel. The detectors were made from CZT crystals grown by the travelling heater method (THM) bonded to a 20×20 application specific integrated circuit (ASIC) and data acquisition (DAQ) system. The detectors had an array of 20×20 pixels on a 250 μm pitch, with each pixel gold-stud bonded to an energy resolving circuit in the ASIC. The DAQ system digitised the ASIC output with 14 bit resolution, performing offset corrections and data storage to disc in real time at up to 40,000 frames per second. The detector geometry and ASIC design was optimised for X-ray spectroscopy up to 150 keV and made use of the small pixel effect to preferentially measure the electron signal. A 241Am source was used to measure the spectroscopic performance and uniformity of the detectors. The average energy resolution (FWHM at 59.54 keV) of each pixel ranged from 1.09±0.46 to 1.50±0.57 keV across the four detectors. The detectors showed good spectral performance and uniform response over almost all pixels in the 20×20 array. A large area 80×80 pixel detector will be built that will utilise the scalable design of the ASIC and the large areas of monolithic spectroscopic grade THM grown CZT that are now available. The large area detector will have the same performance as that demonstrated here. © 2011 Elsevier B.V.


Awadalla S.A.,Taibah University | Al-Grafi M.,Taibah University | Iniewski K.,Redlen Technologies
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2014

The focus of this paper is to investigate, experimentally and theoretical, the optimum operating bias, in cadmium zinc telluride Cd 0.9Zn 0.1Te (CZT) crystals grown using the traveling heater method (THM), required to achieve maximum energy resolution. It was found that 5 mm thick detectors that have low electron trapping, (μτ)e≥1×10 -2 cm2/V, operates efficiently at relatively low applied bias, 200 V; while detectors with high electron trapping, (μτ)e≤ 5 × 10-3 cm2/V, required relative high voltage: as high as 1000 V for 5 mm thick detectors. Similarly 10 mm thick detectors can be operated at as low as 500 V. Moreover, both charge collection efficiency (CCE) and energy resolution(ER) were found to follow the same trend. © 2014 Elsevier B.V. All rights reserved.


Beikahmadi M.,University of British Columbia | Mirabbasi S.,University of British Columbia | Iniewski K.K.,Redlen Technologies
IEEE Sensors Journal | Year: 2016

In this paper, the design of a low-power low-noise readout circuit for cadmium zinc telluride (CdZnTe or CZT) detectors is presented. Such sensors are used in a variety of applications, including medical imaging, security, and astrophysics. The readout circuit includes a charge-sensitive amplifier (CSA), a reset network to accommodate the leakage current of the detector, and a first-order pulse shaper with a pole-zero cancellation circuit. The CSA has two gain settings for 0-5-and 5-45-fC injected charge, and the pulse shaper is designed to provide four different shaping times. The discharge time constant of the CSA can also be adjusted to accommodate various event rates. Furthermore, a comprehensive noise analysis of the readout system is presented. To facilitate the noise analysis, the equivalent noise charge (ENC) equations are derived analytically. The optimization of the noise performance of the front-end circuit is also discussed. The application-specific integrated circuit is fabricated in a 0.13-μm CMOS process. For a detector capacitance of 250 fF, the measured ENC varies from 66 to 101 e-rms depending on the peaking time. The measured power consumption of the readout circuit is just under 1 mW from a 1.2 V supply. © 2015 IEEE.


MacKenzie J.,Redlen Technologies | Kumar F.J.,Redlen Technologies | Chen H.,Redlen Technologies
Journal of Electronic Materials | Year: 2013

The focus of this work is to evaluate the suitability and substrate potential of Cd0.9Zn0.1Te and Cd0.96Zn 0.04Te crystals grown by the traveling heater method (THM). THM-grown Cd0.9Zn0.1Te crystals used for gamma spectroscopy have shown very good spectral performance owing partly to the very low concentration of Te inclusions and precipitates. Inspection in the infrared (IR) of annealed THM-grown CdZnTe wafers reveals no inclusions >3 μm, Fourier-transform infrared measurements show IR transmission values in excess of 60%. Wafer etch pit density values are typically less than 4 × 10-4 pits/cm2, double-crystal x-ray rocking-curve measurements show full-width at half-maximum values approaching 40 arcsec. 〈211 wafers have been produced with off orientation within 0.3. (111)-Oriented, seeded THM growth runs have the ability to provide 10 60 mm × 60 mm × 2 mm wafers from a 75-mm-diameter boule or 20 90 mm × 90 mm × 2 mm wafers from a 100-mm-diameter boule. © 2013 TMS.


Patent
Redlen Technologies | Date: 2016-02-03

A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.


Iniewski K.,Redlen Technologies
Journal of Instrumentation | Year: 2014

Over the last two decades, the II-VI semiconductors CdTe and CdZnTe (CZT) has emerged as the material of choice for room temperature detection of hard X-rays and soft γ-rays. The techniques of growing the crystals, the design of the detectors, and the electronics used for reading out the detectors have been considerably improved over the last few years. CdTe/CZT materials find now applications in astrophysics, medical imaging and security applications. The paper discusses recent progress in CZT detector technology and outlines possible new application opportunities. © 2014 IOP Publishing Ltd and Sissa Medialab srl.


A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.


A radiation detector includes a semiconductor substrate which contains front and rear major surfaces and at least one side surface, a guard ring and a plurality of anode electrode pixels located over the rear surface of the semiconductor substrate, where each anode electrode pixel is formed between adjacent pixel separation regions, a side insulating layer formed on the at least one side surface of the semiconductor substrate, a cathode electrode located over the front major surface of the semiconductor substrate, and an electrically conductive cathode extension formed over at least a portion of side insulating layer, where the cathode extension contacts an edge of the cathode electrode. Further embodiments include various methods of making such semiconductor radiation detector.


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