Raintree Scientific Instruments Shanghai Corporation

Shanghai, China

Raintree Scientific Instruments Shanghai Corporation

Shanghai, China

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Wang X.,Raintree Scientific Instruments Shanghai Corporation | Gao F.,Raintree Scientific Instruments Shanghai Corporation | Huang K.,Raintree Scientific Instruments Shanghai Corporation | Zhang Z.S.,Raintree Scientific Instruments Shanghai Corporation | And 2 more authors.
ECS Transactions | Year: 2014

Since the measurement precision of OCD (Optical Critical Dimension) technology highly depends on the optical hardware configuration, spectra types, and inherently interactions between the incidence of light and various materials with various geometrical structures, here a method is introduced for seeking the most sensitive measurement configuration to enhance the metrology precision and to reduce the noise impact to the greatest extent. In seeking the best mode and spectrum type for data collection, system noise of tools were estimated based on hardware precision. All spectrum types (e.g. SE, SR, Mueller matrix) were normalized for comparability. The sensitivity of different normalized spectra modes with several hardware configurations of incidence angles and azimuth angles were investigated. The optimal hardware measurement configuration and spectrum parameter can be identified. The minimum parameter tolerance of a given model can be retrieved by theoretical simulations. Polysilicon (P2-ET) models of 28 nm nodes were constructed to validate the algorithms. The best measurement mode was selected. This method can provide guidance to the measurement precision before measuring actual device CDs. © 2014 The Electrochemical Society.


Zhang Z.,Raintree Scientific Instruments Shanghai Corporation | Huang Y.,Semiconductor Manufacturing International | Lin Y.-S.,Semiconductor Manufacturing International | Zhan Y.,Raintree Scientific Instruments Shanghai Corporation | And 5 more authors.
China Semiconductor Technology International Conference 2016, CSTIC 2016 | Year: 2016

In modern IC industry, optical critical dimension (OCD) technique has been more and more applied, as one of the most import process control tools. In this work, OCD spectroscopy metrology was used to measure the profiles of 2-D sigma-shaped Source/Drain structures at advanced node. Due to the complexity of the samples, eighteen parameters were investigated and six floating parameters were set up to generate the spectra library. The results were compared with Transmission Electron Microscopy and reference OCD data. The stability of 15-day was evaluated. The results showed good performance of OCD metrology. © 2016 IEEE.


Cheng S.,Raintree Scientific Instruments Shanghai Corporation | Zhan Y.,Raintree Scientific Instruments Shanghai Corporation | Zuo Q.,Shanghai Integrated Circuit Research and Development Center | Chu J.,Shanghai Integrated Circuit Research and Development Center | And 6 more authors.
China Semiconductor Technology International Conference 2016, CSTIC 2016 | Year: 2016

Reducing leakage current and improving device's stability become important challenge for CMOS develop under the technology node of 22nm. FinFET has been attractive as the most potential device structure under 22nm. Unique FinFET device structure has the absolute advantage in restraining short channel effect. This paper presents an optical metrology technique OCD for FinFET dimension measurement. This measurement results by OCD, demonstrate the capability of the OCD as an important metrology technique for IC process control. © 2016 IEEE.


Huang Y.,Semiconductor Manufacturing International | Cai B.-X.,Semiconductor Manufacturing International | Lin Y.-S.,Semiconductor Manufacturing International | Zhan Y.-K.,Raintree Scientific Instruments Shanghai Corporation | And 7 more authors.
ECS Transactions | Year: 2014

In this work, Optical Critical Dimension (OCD) spectroscopy was used to monitor the critical dimension for After-Etch Inspection (AEI) structures at sub 65 nm node, such as Poly Gate, Shallow Trench Isolation, Offset Spacer, and Oxide-Nitride Spacer. The dynamic repeatability of the measurement was obtained through a 10-cycle measurement process with loading and unloading wafers. The long-term stability was examined with more than 3 day's measurements. The good correlation results between the OCD spectroscopic tool and reference tools, such as, CD Scanning Electron Microscope and Transmission Electron Microscopy, were obtained. The results demonstrated that the OCD spectroscopic tool has advantages of high precision and high stability for 65 nm node and beyond. © 2014 The Electrochemical Society.


Chen H.,Raintree Scientific Instruments Shanghai Corporation | Gao F.,Raintree Scientific Instruments Shanghai Corporation | Huang K.,Raintree Scientific Instruments Shanghai Corporation | Zhang Z.,Raintree Scientific Instruments Shanghai Corporation | And 2 more authors.
China Semiconductor Technology International Conference 2015, CSTIC 2015 | Year: 2015

Critical dimension (CD) and geometry shape of the gratings play a key role in extreme ultraviolet (EUV) lithography to ensure the device performance. It is important to control the dose/defocus in the EUV photolithography under proper status to make sure the CD and shape meeting the fine and strict requirements. Through the OCD measurement, we build a relationship between the CD/shape and dose/defocus through a Focus-Exposure-Matrix (FEM) wafer, and eventually can measure the dose/defocus in a product wafer. © 2015 IEEE.


Zhang Z.,Raintree Scientific Instruments Shanghai Corporation | Chen H.,Raintree Scientific Instruments Shanghai Corporation | Cheng S.,Raintree Scientific Instruments Shanghai Corporation | Zhan Y.,Raintree Scientific Instruments Shanghai Corporation | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

Optical critical dimension (OCD) measurement has been widely demonstrated as an essential metrology method for monitoring advanced IC process in the technology node of 90 nm and beyond. However, the rapidly shrunk critical dimensions of the semiconductor devices and the increasing complexity of the manufacturing process bring more challenges to OCD. The measurement precision of OCD technology highly relies on the optical hardware configuration, spectral types, and inherently interactions between the incidence of light and various materials with various topological structures, therefore sensitivity analysis and parameter optimization are very critical in the OCD applications. This paper presents a method for seeking the optimum sensitive measurement configuration to enhance the metrology precision and reduce the noise impact to the greatest extent. In this work, the sensitivity of different types of spectra with a series of hardware configurations of incidence angles and azimuth angles were investigated. The optimum hardware measurement configuration and spectrum parameter can be identified. The FinFET structures in the technology node of 14 nm were constructed to validate the algorithm. This method provides guidance to estimate the measurement precision before measuring actual device features and will be beneficial for OCD hardware configuration. © 2016 SPIE.


Patent
Raintree Scientific Instruments Shanghai Corporation | Date: 2014-06-02

A method for a system to generate a recipe for performing wafer alignment, includes: generating first and second alignment data sets, the first alignment data set including image information regarding a first site on a wafer and coordinates of characteristic points at the first site, and the second alignment data set including image information regarding a second site different than the first site on the wafer and coordinates of characteristic points at the second site; and saving the generated first and second alignment data sets as a recipe for wafer alignment; wherein the generating of the first alignment data set includes: selecting, as the first site, a site including a characteristic pattern on the wafer; determining first and second characteristic points at the selected site; and recording coordinates of the determined first and second characteristic points.

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