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Gumi, South Korea

Choi K.-K.,Pohang University of Science and Technology | Kee J.,Pohang University of Science and Technology | Kwon D.-J.,JIO Fine Chemical Co. | Kim D.-K.,Sejong University
Journal of Nanoscience and Nanotechnology | Year: 2014

Electroless-plating Ni-B films have been evaluated for the application as the diffusion barrier and metal cap for copper integration. The effect of post plasma treatment in a hydrogen environment on the characteristics of Ni-B films such as chemical composition, surface roughness, crystallinity, and resistivity was investigated. By treating electroless-plating Ni-B films with H2 plasma, the resistance and the roughness of the films decreased. The leakage current of Ni-B bottom electrode/30-nmthick Al2O3/Al top electrode structures improved after the H2 plasma treatment on the Ni-B films. 40 nm-thick electroless-plating Ni-B film was able to block Cu diffusion up to 350 °C. Copyright © 2014 American Scientific Publishers.

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