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Schindler F.,Qorvo
IEEE Microwave Magazine | Year: 2016

My great-grandfather was a webmaster. Actually, he was a Webmeister. The same goes for my grandfather. My dad recently showed me old portraits of some of his family members. They all had their names written on them in elegant script. Some also included their occupations, and I was amused to see "Webmeister" printed on my great-grandfather's portrait. This was, of course, long before anyone had thought of the Internet. This was in an era during which electricity was just coming into common usage. © 2016 IEEE.


Schindler F.,Qorvo
IEEE Microwave Magazine | Year: 2016

Examines the viability of operating and managing businesses on a smaller scale. © 2016 IEEE.


Roesch W.J.,Qorvo
Microelectronics Reliability | Year: 2015

This is a demonstration that blends failure mechanism information and application expectations in order to set goals and make predictions that can be used in setting guidelines or requirements for qualification methods, sample sizes, and durations which are relevant to intrinsic and extrinsic reliability. This information is required to fill in the gaps for new types of knowledge-based and application-specific qualification requirements. Instead of generalizing requirements for convenience and uniformity, as with 29 year old stress-driven qualification methods, specific information can be used to pinpoint needs for one type of device - assuming failure mechanism, degradation distribution, and acceleration factor information is known and exists in the public domain. For illustration, a Power Amplifier Module is demonstrated. The overall synthesis of proper qualification requirements for this type of semiconductor module will result in efficient stressing to protect customers and allow for the completion of meaningful qualifications efficiently. © 2015 Elsevier Ltd. All rights reserved.


Drandova G.I.,Qorvo
Microelectronics Reliability | Year: 2015

This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process. The impact of bias was studied and a humidity-induced semiconductor failure model, incorporating bias acceleration, was proposed. © 2015 Elsevier Ltd. All rights reserved.


Schindler F.,Qorvo
IEEE Microwave Magazine | Year: 2015

Discusses the importance of joining hte MTSS Society and volunteering for various activities and programs. © 2015 IEEE.

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