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Nashua, NH, United States

Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2011

We propose to develop a large-format 1Kx1K longwave infrared focal plane array (FPA) from Type-II InAs/(In)GaSb strained layer superlattice (SLS) photodiodes. In Phase I, we will develop small pixels with the goals of ~ 10 micron cutoff wavelength, quantum efficiency>60%, and dark current density<1e-5 A/cm^2 at 77K in a backside-illuminated FPA configuration. These metrics will be measured as a function of pixel size for different passivation schemes. Phase II will apply these developments to realize a 1Kx1K FPA. We will also develop a cost and yield model in Phase II and refine it with actual data in order to be able to predict the cost/pixel for SLS FPAs as a function of volume - a key metric for the commercial viability of both SLS technology and the horizontal business model for FPA manufacturing.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2011

We propose to bandgap engineer the InAs/GaSb/AlSb material system to realize a dualband focal plane array (FPA) made up of stacked multi-barrier Type-II strained layer superlattice (SLS) photodiodes. Two longwave infrared spectral bands will be imaged in alternate frames by using a readout multiplexer that flips the voltage bias across the FPA from frame to frame. In Phase I, we will develop and demonstrate the basic dualband sensor, which will be converted into a proof-of-concept 320x256 dualband FPA in the Phase I Option. Phase II will develop a 640x512 version with the goal of high (single band level) performance in each of the two longwave bands combined with low spectral crosstalk. We will also engage with a Systems Prime in Phase II so as to ready the FPA and packaging for a systems level test following Phase II.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: STTR | Phase: Phase II | Award Amount: 893.86K | Year: 2014

We propose to combine QmagiQ's strained layer superlattice (SLS) sensor technology with MIT Lincoln Laboratory's novel digital pixel readout integrated circuit (DROIC) to realize an advanced longwave infrared digital focal plane array (DFPA) with high quantum efficiency, dynamic range, and operating temperature. In Phase I, we developed the basic SLS DFPA and demonstrated its extraordinarily high signal-to-noise. In Phase II, we will optimize the DFPA, integrate it into a full-fledged surveillance system, and test it in the field. It's field performance will be directly compared to an identical system with a mercury cadmium telluride FPA.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 125.00K | Year: 2015

We propose to bandgap-engineer the antimony-based Group III-V compound semiconductor material system to realize a dualband focal plane array (FPA) made up of stacked multi-barrier Type-II strained layer superlattice (SLS) photodiodes. Two longwave infrared (LWIR) spectral bands will be imaged in alternate frames by using a readout multiplexer that flips the voltage bias across the FPA from frame to frame. In Phase I, we will re-design the basic LWIR SLS photodiode to significantly increase quantum efficiency over the current state-of-the-art while minimizing dark current. Phase II will use this breakthrough to develop a longwave/longwave dualband infrared FPA with the high quantum efficiency and low spectral crosstalk. We will also engage with a Systems Prime in Phase II to package the FPA for a systems level test following Phase II. Approved for Public Release 14-MDA-8047 (14 Nov 14)


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase II | Award Amount: 1.00M | Year: 2012

In Phase I we developed a novel infrared photodiode based on Type-II InAs/GaSb strained layer superlattices (SLS) that showed pingpong dualband action, wherein the spectral response of the diode was switched between extended midwave (~ 8 micron cutoff) and longwave (~ 10 micron cutoff) infrared by the polarity of the voltage bias applied across it. In Phase II we will improve quantum efficiency in each band, minimize spectral crosstalk, fabricate 640x512 focal plane arrays with high uniformity and pixel operability, and integrate and deliver a compact portable camera with a pluggable sensor cartridge. The plug-and-play camera will enable DOD to field-test this new dualband sensor technology for missile defense applications.

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