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Jang S.R.,Korean University of Science and Technology | Ahn S.H.,Korean University of Science and Technology | Ryoo H.J.,Electrical Propulsion Research Center | Rim G.H.,Electrical Propulsion Research Center
Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 | Year: 2010

This paper describes a novel 10kW (10kV, 1A) high voltage capacitor charger which has the combined advantage both series loaded resonant inverter and ZVS full-bridge PWM inverter. Series loaded resonant inverter has a wide ZV or ZC switching range regardless of load condition. However it can generate audible noise at light load condition and requires careful filter design because it should be controlled by variable frequency. On the other hand, ZVS full-bridge PWM inverter can be controlled by phase delay of each switching signal with fixed switching frequency, but when it is working at light load condition, efficiency will be decrease because of loosing soft switching condition. The proposed charger has the same structure like series resonant inverter, and controlled at fixed frequency by way of phase shifted PWM. The operational principle of proposed charger and soft switching mechanism is analyzed. The developed charger is verified to have higher efficiency at light load condition and higher power density by way of simulation and experiments. Developed charger and 10kV IGBT stack based solid state pulsed power modulator was combined and tested with various load conditions. The experimental results verified that the proposed charger can be used effectively for high voltage pulsed power modulator which requires the various kinds of load condition with respect to the applications. © 2010 IEEE.


Jang S.R.,Korean University of Science and Technology | Ahn S.H.,Korean University of Science and Technology | Ryoo H.J.,Electrical Propulsion Research Center | Rim G.H.,Electrical Propulsion Research Center
Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 | Year: 2010

For the high voltage semiconductor switch based pulsed power application, series operation of semiconductor switches is generally required because of limitation of device ratings. However, there are many considerations to design gate driver circuit for stacking the IGBTs because of the complexity and difficulty of synchronization and protection. Gate driver circuit of series connected IGBTs usually requires high number of high voltage insulated gate power source and complex gate signal schemes depending on the total number of switches. Furthermore, since it is difficult to synchronize switching operations, complex protection circuit should be employed to protect semiconductors switches from arc or short circuit condition which is frequently generated during normal operation of pulsed power application. The purpose of this study is the introducing of the simple and reliable gate driver circuits for series connected semiconductor switches based on the expected problems and considerations. The advantages of each driver circuit are analyzed based on comparative study of proposed gate driver circuits with PSpice simulation. By combining driver circuit with 12 series connected IGBT stack for 10kV pulsed modulator, the various kinds of testing were performed including normal operation and arc or short condition. The experimental results is confirmed that proposed gate driver circuit can be effectively used at semiconductor based pulsed power modulator. © 2010 IEEE.

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