Hsinchu, Taiwan
Hsinchu, Taiwan

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Chen S.-C.,National Tsing Hua University | Chang T.-C.,National Sun Yat - sen University | Hsieh C.-M.,National Chiao Tung University | Li H.-W.,National Chiao Tung University | And 5 more authors.
Thin Solid Films | Year: 2010

The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi2 was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ steam generation system to form uniform W nanocrystals embedded in SiO2. Transmission electron microscopy analyses revealed the microstructure in the thin film and X-ray photon-emission spectra indicated the variation of chemical composition under different oxidizing conditions. Electrical measurement analyses showed the different charge storage effects because the different oxidizing conditions influence composition of trapping layer and surrounding oxide quality. Moreover, the data retention and endurance characteristics of the formed W nanocrystal memory devices were compared and studied. The results show that the reliability of the structure with 2% hydrogen and 98% oxygen at 950 °C oxidizing condition has the best performance among the samples. © 2010 Elsevier B.V. All rights reserved.


Chen S.-C.,National Tsing Hua University | Chang T.-C.,National Sun Yat - sen University | Chen W.-R.,National Chiao Tung University | Lo Y.-C.,National Tsing Hua University | And 5 more authors.
Thin Solid Films | Year: 2010

In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. © 2010 Elsevier B.V. All rights reserved.


Chen S.-C.,National Tsing Hua University | Chang T.-C.,National Sun Yat - sen University | Chen W.-R.,National Chiao Tung University | Lo Y.-C.,National Tsing Hua University | And 5 more authors.
Thin Solid Films | Year: 2011

This study focuses on the influence of a hydrogen plasma treatment on electrical properties of tungsten nanocrystal nonvolatile memory. The X-ray photon emission spectra show that, after the hydrogen plasma treatment, a change in binding energy occurs such that Six+ and Siy+ peaks appear at a position that is shifted about 2.3 and 3.3 eV from Si0+ in Si 2p spectra. This indicates that Si dangling bonds are passivated to form a Si-H bond structure in the SiO2. Furthermore, the transmission electron microscopy shows cross-sectional and plane-view for the nanocrystal microstructure after the hydrogen plasma treatment. Electrical measurement analyses show improved data retention because the hydrogen plasma treatment enhances the quality of the oxide surrounding the nanocrystals. The endurance and retention properties of the memory device are improved by about 36% and 30%, respectively. © 2011 Elsevier B.V. All rights reserved.


Yeh M.-P.,Promos Technologies | Hong C.-L.,Promos Technologies
Surface and Interface Analysis | Year: 2010

Contamination inspection on the oxide and nitride films deposited on silicon wafer surface by using vibrating contact potential difference (CPD) probe is presented in this paper. Contaminants induce the variation of the CPD between a dielectric layer and the probe material. However, the screening effect of the charges on the surface, interface and in the dielectric layer overwhelms the contamination signals when using the vibrating CPD monitor. This obstacle can be overcome using the signal characteristic diagnosis by which most of the charge signals can be filtered out. The validity of this approach was verified by means of the vapor phase decomposition coupling with inductively coupled plasma mass spectrometry (VPD-ICP-MS), and we found that the filtrated contamination signals were correlated closely with the metallic concentration. Moreover, the proper annealing process could enhance the response signals of contaminants, especially for Ni and Cu, in the nitride film monitoring. This inspection method was effectively applied in the trace metallic contamination routine monitor and the contamination source tracing of the furnace tools. Copyright © 2010 John Wiley & Sons, Ltd.

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