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Rio Dell, CA, United States

Dragoi V.,EV Group | Mittendorfer G.,EV Group | Flotgen C.,EV Group | Dussault D.,Product Systems Inc. | Wagenleitner T.,EV Group
Proceedings of the International Semiconductor Conference, CAS | Year: 2011

Wafer bonding is a very attractive technology for applications in wafer-level 3D integration. However, most of the bonding processes are not compatible with CMOS technology in terms of process temperature and contamination levels. A low temperature fusion bonding process is presented as an example of how the wafer bonding issues were successfully solved and applied to manufacturing processes. © 2011 IEEE. Source


Dussault D.,Product Systems Inc. | Dragoi V.,EV Group
Proceedings of the International Semiconductor Conference, CAS | Year: 2011

MEMS-specific processes have had to adapt standard IC manufacturing technologies in order to accommodate its custom requirements. Photolithography is one of the standard techniques which had to adopt the use of thick resists (between few tens and up to few hundreds of m) needed for high aspect ratio features fabrication, and to adapt to the specific high volume manufacturing yield requirements demanded by developing new processing techniques. This paper introduces a new development technique based on the use of a megasonic transducer for yield improvement and process time reduction. © 2011 IEEE. Source


Dussault D.,Product Systems Inc. | Dragoi V.,EV Group
Materials Research Society Symposium Proceedings | Year: 2012

The use of non-standard materials (e.g. specific substrates shapes and dimensions or polymer materials) for MEMS applications imposed a requirement for the development of new techniques for even well-established processes. Acoustic energy in the MHz frequency range has been used in the semiconductor industry for various processes such as photoresist development, substrate cleaning and electro-plating enhancement. The work presented here is focusing on single wafer cleaning and on photoresist development. The cleaning process developed addresses mainly wafer cleaning prior to wafer bonding processes, in which particle contamination is of crucial importance. The photoresist development process was developed mainly for thick resist layers development (few hundreds of μm) in order to improve definition of high aspect ratio features but was used as well as a significant process time reduction factor for development of regular thickness resists (few μm). © 2012 Materials Research Society. Source


Dragoi V.,EV Group | Bartel J.,EV Group | Dussault D.,Product Systems Inc.
ECS Transactions | Year: 2010

MEMS-specific processes required to adapt standard IC manufacturing technologies in order to accommodate its custom requirements. Photolithography is one of the standard techniques which had to adapt particularly to the use of thick resists needed for high aspect ratio features fabrication. In order to work with resist thickness varying between few tens and up to few hundreds of micrometers the standard process flow had to be changed to multiple-layers coating, customized (and very long) baking times, special exposure techniques and development. This paper introduces a megasonic-enhanced method used for developing resists. In case of MEMS applications this method brings not only a major yield improvement (better quality features) but also a major decrease of process time. ©The Electrochemical Society. Source


Dragoi V.,EV Group | Mittendorfer G.,EV Group | Flotgen C.,EV Group | Dussault D.,Product Systems Inc. | Wagenleitner T.,EV Group
Romanian Journal of Information Science and Technology | Year: 2011

Wafer bonding proved to be a valuable MEMS manufacturing technology during past years, when bonding-based applications moved to high volume production. Due to its ability to allow for building 3D architectures wafer bonding became very attractive also for applications using wafer-level 3D integration. However, most of the bonding processes are not compatible with CMOS technology in terms of process temperature and contamination levels. A low temperature fusion bonding process is presented as an example of how the wafer bonding issues were successfully solved and applied to manufacturing processes. Source

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