Precision Equipment Company

Yokohama-shi, Japan

Precision Equipment Company

Yokohama-shi, Japan

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Matsuyamaa T.,Precision Equipment Company | Mizuno Y.,Precision Equipment Company | Smith D.G.,Nikon Research Corporation of America
Advanced Optical Technologies | Year: 2012

The k 1 factor continues to be driven downward, in order to enable the 22-nm feature generation and beyond. Such a low k 1 factor tends to lead to extremely small process windows. For such demanding imaging challenges, it is not only necessary for each unit, contri buting to the imaging system, to be driven to its ultimate performance capability, but also that active techniques that can expand the process window and the robustness of the imaging against various kinds of imaging parameters be implemented. One such technique is source and mask optimization (SMO). In this paper, we study the effect of SMO. Furthermore, we discuss how to realize the SMO solution in the imaging system setup on the scanner. The setup process includes freeform pupilgram generation (source intensity distribution on the pupil) and pupilgram adjustment. © 2012 THOSS Media & De Gruyter.


Saiki K.,Precision Equipment Company | Hara A.,Precision Equipment Company | Sakata K.,Yokohama National University | Fujimoto H.,Yokohama National University
IEEE Transactions on Industrial Electronics | Year: 2010

In hard-disk-drive control, the perfect tracking control (PTC) method has already obtained high performance. Therefore, the first author and his group study the PTC scheme for improving the performance of large-scale stages. This paper presents an application of the PTC scheme to the tracking control of two different stages. The results from both simulations and experiments show that the PTC method outperforms the conventional rigid-body-mode-based feedforward method. © 2010 IEEE.


Hirayanagi N.,Precision Equipment Company | Mizuno Y.,Precision Equipment Company | Mori M.,Precision Equipment Company | Kita N.,Precision Equipment Company | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

Nikon's Intelligent Illuminator, a freeform pupilgram generator, realizes a high flexibility for pupilgram control by using more than 10,000 degrees-of-freedom for pupilgram adjustment. In this work, an Intelligent Illuminator was integrated into an ArF scanner, the Nikon NSR-S621D. We demonstrate the pupilgram setting accuracy by direct correlation between on-body measured pupilgram and desired target pupilgram. We show that the Intelligent Illuminator is used for fine tuning of the pupilgram to match optical proximity effect (OPE) characteristics. We experimentally confirmed that a global source optimization software realized an improvement of lithographic process window without changing OPE characteristics by using optimized pupilgram made by Intelligent Illuminator. © 2013 SPIE.


Matsuyama T.,Precision Equipment Company | Kita N.,Precision Equipment Company | Nakashima T.,Precision Equipment Company | Tanitsu O.,Precision Equipment Company | Owa S.,Precision Equipment Company
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

Due to the extremely small process window in the 32nm feature generation and beyond, it is necessary to implement active techniques that can expand the process window and robustness of the imaging against various kinds of imaging parameters. Source & Mask Optimization (SMO) 1 is a promising candidate for such techniques. Although many applications of SMO are expected, tolerancing and specifications for aggressively customized illuminators have not been discussed yet. In this paper we are going to study tolerancing of a freeform pupilgram which is a solution of SMO. We propose Zernike intensity/distortion modulation method to express pupilgram errors. This method may be effective for tolerancing analysis and defining the specifications for freeform illumination. Furthermore, this method is can be applied to OPE matching of free form illumination source. © 2010 SPIE.


Miura T.,Precision Equipment Company | Murakami K.,Precision Equipment Company | Kawai H.,Precision Equipment Company | Kohama Y.,Precision Equipment Company | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Takahashi S.,University of Tokyo | Yokozeki H.,University of Tokyo | Fujii D.,Precision Equipment Company | Kudo R.,Osaka University | Takamasu K.,University of Tokyo
CIRP Annals - Manufacturing Technology | Year: 2014

We propose a novel in-process optical inspection method for micro-openings on a mirrored surface, such as mechanical functional gaps in micro-electro-mechanical systems (MEMS) and microchannels in microfluidics systems. The proposed method has not only highly sensitive detection characteristics based on dark field observations but also super-resolution observation characteristics based on the light scattering dependence of the edges of the micro-opening on the orientation of incident light under coherent imaging. Both theoretical and experimental analyses suggest that we can confirm the existence of proper micro-openings beyond the diffraction limit of imaging optics by shifting the relative phase of the counter-propagating incident beams. © 2014 CIRP.


Ohmura Y.,Precision Equipment Company | Ogata T.,Precision Equipment Company | Hirayama T.,Precision Equipment Company | Nishinaga H.,Precision Equipment Company | And 5 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

In order to realize further improvement of productivity of semiconductor manufacturing, higher throughput and better imaging performance are required for the exposure tool. Therefore, aberration control of the projection lens is becoming more and more important not only for cool status performance but also heating status. In this paper, we show the improvements of cool status lens aberration, including scalar wavefront performance and polarization aberration performance. We also discuss various techniques for controlling thermal aberrations including reduction of heat in the lens, simulation, compensating knob, and adjusting method with actual imaging performance data during heating and cooling. © 2011 SPIE.


Matsuyama T.,Precision Equipment Company | Kita N.,Precision Equipment Company | Mizuno Y.,Precision Equipment Company
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

Source Mask Optimization1 (SMO) is one of the most important techniques available for extending ArF immersion lithography. However, imaging with a small k1 factor (∼0.3 or smaller) is very sensitive to errors in the imaging system, such as lens apodization, process control, mask error, etc. As a result, the real source shape must be re-adjusted to realize expected imaging performance as may be seen, for example, in an OPE curve. The intelligent illuminator can modify the pupilgram with high spatial and intensity resolution in the pupil. But the question is: How to adjust the pupilgram parameters properly to match target OPE? In this paper we present and describe a pupilgram adjusting method that can effectively control the various illuminator parameters. The method uses pupilgram modulation functions, which are similar to Zernike polynomials used in wavefront analysis, to describe the optimal pupilgram adjustment. The resulting modulation can then be realized by the intelligent illuminator. We demonstrate the effect of this method and the relation to minimum pupil resolution and gray scale levels that are needed for the intelligent illuminator to achieve its goals. In addition, a pupil analysis scheme, which is suitable for the applied pupilgram adjustment method, is proposed and validated. Using this method, SMO solutions will be more realistic and practically achievable for extending ArF immersion lithography. © 2011 SPIE.


Suwa K.,Nikon Corporation | Yashiki S.,Nikon Corporation | Hirukawa S.,Precision Equipment Company | Noda T.,Nikon Corporation
Applied Optics | Year: 2014

By analyzing aerial images, we characterize the lowest order coma aberration measurements for the projection optics of a microlithography exposure apparatus based on scalar diffraction theory. Our developed method for measuring the coma aberration exploits the intensity difference between the sidelobe peaks appearing near the boundaries of the bright field ("negative") single-line or plural-line patterns. Our method further demonstrates linearity between the intensity difference of the sidelobe peaks and the amount of residual lowest order coma aberration. We analyze the coma aberration sensitivity formula and determine the duty ratio of the line-and-space pattern that realizes the highest aberration sensitivity. © 2014 Optical Society of America.


Suwa K.,Nikon Corporation | Yashiki S.,Nikon Corporation | Hirukawa S.,Precision Equipment Company
Japanese Journal of Applied Physics | Year: 2014

The focus wedge mark (FWM), a periodic array of wedge shaped marks, is a tool used to determine the best-focus position in photolithography. Here, we develop a one-dimensional physical model for the FWM and analyze the focus dependence of the wedge length under coherent imaging conditions. The amplification factor of the FWM, which describes the superiority of the FWM compared to measurements based on line and space marks, is determined by the geometrical magnification of the wedge. We show that around the exposure dose energy typically used in lithography the amplification factor is much higher than the geometrical magnification. Numerical lithography simulations confirm that the focus sensitivity of the FWM is much higher than that of a line and space pattern. © 2014 The Japan Society of Applied Physics.

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