Entity

Time filter

Source Type

Shizuoka-shi, Japan

Habuka H.,Yokohama National University | Ohashi S.,Yokohama National University | Tsuchimochi T.-A.,Yokohama National University | Kinoshita T.,Pre Technology Co.
ECS Transactions | Year: 2011

Water motion over a 200-mm diameter wafer surface rotating in a single-wafer wet cleaner was observed and calculated, by means of the water flow visualization technique and the computational fluid dynamics, respectively. The tracer, the blue-colored ink, injected from the wafer center symmetrically spread over the rotating wafer surface from its center to the edge. The radial velocity of the water was nearly constant over the wafer surface except at its center area. The water layer thickness in the rotation rate range, approximately 0.1 mm, gradually decreased with the increasing rotation rate. The tracer injected from non-center positions tended to be localized in the peripheral region of the wafer, particularly at the high rotation rates. ©The Electrochemical Society.


Habuka H.,Yokohama National University | Ohashi S.,Yokohama National University | Kinoshita T.,Pre Technology Co.
Materials Science in Semiconductor Processing | Year: 2012

A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200 mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement. Thus, the numerical calculation model developed in this study is expected to be practical for designing the wet etching conditions. © 2012 Elsevier Ltd.


Habuka H.,Yokohama National University | Ohashi S.,Yokohama National University | Tsuchimochi T.-A.,Yokohama National University | Kinoshita T.,Pre Technology Co.
Journal of the Electrochemical Society | Year: 2011

Water motion over a 200-mm diameter wafer surface rotating in a single-wafer wet cleaner was studied, using the water flow visualization technique with a video camera and blue-colored ink as the tracer. When the tracer was injected from the wafer center, it was seen to symmetrically spread over the rotating wafer surface from its center to the edge. The radial velocity of the water showed a negligibly small change over the wafer surface except at its center area. The water layer thickness in the rotation rate range between 500 and 1400 rpm was approximately 0.1 mm; it gradually decreased with the increasing rotation rate. The tracer injected from non-center positions showed that the water flow tended to be localized in the peripheral region of the wafer, particularly at the high rotation rates. © 2011 The Electrochemical Society.


Habuka H.,Yokohama National University | Mizuno K.,Yokohama National University | Ohashi S.,Yokohama National University | Kinoshita T.,Pre Technology Co.
ECS Journal of Solid State Science and Technology | Year: 2013

A surface chemical reaction model of silicon dioxide film etching by hydrogen fluoride aqueous solution using a single wafer wet etcher was numerically evaluated taking into account the Langmuir-type rate theory and the transport phenomena. The surface reaction process was assumed to consist of three steps, such as (i) hydrogen fluoride adsorption at the silicon dioxide surface, (ii) chemical reaction of silicon dioxide with hydrogen fluoride and (iii) desorption of the by-product from the surface. The rate constants determined by calculation which could reproduce the silicon dioxide etching rate obtained by experiment. The rate limiting step was additionally evaluated. © 2013 The Electrochemical Society.


Habuka H.,Yokohama National University | Ohashi S.,Yokohama National University | Mizuno K.,Yokohama National University | Kinoshita T.,Pre Technology Co.
ECS Transactions | Year: 2013

A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200-mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement. © The Electrochemical Society.

Discover hidden collaborations