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Youngwood, PA, United States

Powerex Inc., is a Pennsylvania-based company specializing in high power semiconductor applications. Powerex supports many markets, including transportation, AC and DC motor controls, UPS, alternative energy, medical power supplies, welding, industrial heating, electrical vehicles, aircraft and communications.Established on January 1, 1986, Powerex inc. was the result of cooperation between two major players in the power semiconductor industry -- the Power Semiconductor Divisions of General Electric Company and Westinghouse Electric Corporation. Mitsubishi Electric Corporation later established an equity position in Powerex. In 1994, Westinghouse sold its shares to General Electric and Mitsubishi Electric, the present equal majority shareholders. Corporate offices and manufacturing facilities are located in western Pennsylvania.Powerex offers a broad line of products, including IGBT; MOSFET Modules; Intelligent Power Modules ; DIP-IPM; Module Accessories ; Discrete Thyristors/SCR ; Discrete Rectifiers; Thyristor and Diode Modules; Fast Recovery and Three-Phase Diode Modules; Assemblies; IGBT Assemblies; and Custom Modules. Wikipedia.

Powerex Inc. and General Electric | Date: 2013-01-29

An electric machine having a rectifier assembly placed within a rotating shaft of the electric machine to convert the AC output of the electric machine to DC prior to transmission of the electricity from the electric machine.

Clark N.,Powerex Inc.
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | Year: 2013

This paper presents a new version of the Dual In-line Package Intelligent Power Module (DIPIPM™ Ver.5) developed by Mitsubishi Electric for motor control in consumer goods. The DIPIPM™ Ver.5 features a complete IGBT (Insulated Gate Bipolar Transistor) protection strategy. The bootstrap diode and current limiting resistor are now built-in so that the only external component required for the high side supplies is a bootstrap capacitor. The new 5 th Generation products also provide built-in temperature monitoring with analog feedback to the controller (Figure 1). The DIPIPM™ Ver.5 also contains the unique state-of-the-art high-efficiency 6th Generation 600V CSTBT chip. © 2013 IEEE. Source

Motto E.,Powerex Inc.
Power Electronics Technology | Year: 2010

The new generation 4 DIP-IPM device uses a new low thermal impedance structure in which a partially cured insulating resin sheet is adhered to the rear surface of lead frame after chip bonding. The other surface of the resin sheet is attached to an aluminium heat spreader. The DIP-IPM includes high voltage level shifting provided by integrated high voltage integrated circuit (HVIC) that eliminates the need for relatively expensive optocouplers or pulse transformers, and allows direct connection of all six control inputs to the CPU/DSP. The DIP-IPM is protected from failure of the 15V control power supply by a built-in under-voltage lock out circuit. The new DIP-IPM has been equipped with IGBT chips having a current mirror emitter that supplies a low level current, which is approximately 1/10,000 of the main emitter current allowing the use of a small surface mount current sensing resistor. The built-in HVIC level shifters allow all signals to be referenced to the common ground of the 15V control power supply. Source

Motto E.R.,Powerex Inc.
Power Electronics Technology | Year: 2010

High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. The usable lower limit for the on-state gate voltage is decided by the IGBT transconductance or gain, and acceptable switching losses. The external series gate resistance (R G) has a significant effect on the IGBT's dynamic performance. A smaller series gate resistor charge and discharge the gate capacitance faster, resulting in increased switching speed and reduced switching losses. The isolating interface for the gate drive signals must be designed with appropriate noise immunity and optocouplers should have a guaranteed minimum common mode transient noise immunity of 10 kV/μsec specified at a common mode voltage (VCM) of at least 1000 V. IGBT modules are designed to survive low impedance short circuits for a minimum of 10 μsec. The output of the AND is used to command the IGBT to shut down to protect it from the short circuit. Source

Motto E.R.,Powerex Inc.
Power Electronics Technology | Year: 2010

The three-level inverter has to be partitioned into the circuits in modules according to their power handling requirements to address the circuit complexity issues. The three-level inverter offers several advantages such as the applied voltage on the IGBT is one-half that of a conventional two-level inverter that allow the use of 600V IGBTs in 460V AC applications instead of 1200V devices required in conventional two-level topologies. It has an effective modulation frequency twice that of a conventional inverter, so it offers a cleaner output voltage waveform. The new modules containing four different circuit topologies can be developed to cover a range from 25A to 600A and for the high power range from 300A to 600A, upper and lower half leg modules has been developed. The TLISIM program analyzes operation of a three-level, three-phase inverter and calculates the losses and temperature rises for Powerex TLI modules. Source

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