Power Photonic Corporation

Stony Brook, NY, United States

Power Photonic Corporation

Stony Brook, NY, United States
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Hosoda T.,State University of New York at Stony Brook | Kipshidze G.,State University of New York at Stony Brook | Kipshidze G.,Power Photonic Corporation | Shterengas L.,State University of New York at Stony Brook | Belenky G.,State University of New York at Stony Brook
Electronics Letters | Year: 2010

A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29mW of output power at 17°C. © 2010 The Institution of Engineering and Technology.


Jung S.,State University of New York at Stony Brook | Kipshidze G.,State University of New York at Stony Brook | Liang R.,State University of New York at Stony Brook | Suchalkin S.,Power Photonic Corporation | And 2 more authors.
Journal of Electronic Materials | Year: 2012

We have demonstrated a wet etching technique for fabrication of narrow ridge lasers. Precise control over etching depth and ridge width was realized by introducing an etch stop layer into a laser structure and by using two etchants with different selectivity. The 6-μm-wide ridge laser emitting at 2 μm generated continuous-wave power of 70 mW at 20°C. Single lateral mode operation was observed up to 400 mA, corresponding to 8 × μth. © 2011 TMS.


Hosoda T.,State University of New York at Stony Brook | Kipshidze G.,State University of New York at Stony Brook | Kipshidze G.,Power Photonic Corporation | Shterengas L.,State University of New York at Stony Brook | Belenky G.,State University of New York at Stony Brook
Electronics Letters | Year: 2011

Single spatial mode GaSb-based type-I quantum well diode lasers with 3μm emission and continuous-wave output power above 15mW at room temperature are reported. The devices with 5.5μm-wide ridge waveguides were fabricated by selective wet etching technique. © 2011 The Institution of Engineering and Technology.


Jung S.,State University of New York at Stony Brook | Suchalkin S.,Power Photonic Corporation | Kipshidze G.,State University of New York at Stony Brook | Westerfeld D.,Power Photonic Corporation | And 3 more authors.
Applied Physics Letters | Year: 2010

We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3-3.4 m wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 m and 0.14 mW at 3 m. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications. © 2010 American Institute of Physics.


Donetsky D.,State University of New York at Stony Brook | Belenky G.,State University of New York at Stony Brook | Belenky G.,Power Photonic Corporation | Svensson S.,U.S. Army | And 2 more authors.
Applied Physics Letters | Year: 2010

Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed. © 2010 American Institute of Physics.


Jung S.,State University of New York at Stony Brook | Suchalkin S.,State University of New York at Stony Brook | Suchalkin S.,Power Photonic Corporation | Westerfeld D.,Power Photonic Corporation | And 4 more authors.
Semiconductor Science and Technology | Year: 2011

GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 νm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm-2 (λ = 3.66 νm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed. © 2011 IOP Publishing Ltd.


Kipshidze G.,State University of New York at Stony Brook | Kipshidze G.,Power Photonic Corporation | Hosoda T.,State University of New York at Stony Brook | Sarney W.L.,State University of New York at Stony Brook | And 2 more authors.
IEEE Photonics Technology Letters | Year: 2011

Metamorphic Ga0.84In0.16Sb virtual substrates with lattice constants 0.9% larger than those of GaSb were developed by solid-source molecular beam epitaxy. The mismatch between the parent GaSb and the virtual substrate was accommodated by a network of misfit dislocations formed in GaInSb buffer layers with linearly graded indium and gallium compositions. Arsenic-free laser heterostructures emitting at 2.2 $\mu\hbox{m}$ at room temperature were grown on virtual substrates. The antimony was the only group V element used in growth. These novel diode lasers operate at room temperature and generate above 1.4 W of continuous-wave (CW) power. © 2010 IEEE.


Jung S.,State University of New York at Stony Brook | Liang R.,State University of New York at Stony Brook | Kipshidze G.,State University of New York at Stony Brook | Suchalkin S.,State University of New York at Stony Brook | And 3 more authors.
Semiconductor Science and Technology | Year: 2012

Diffraction limited λ = 22.2m ridge waveguide lasers with continuous wave output power near 100 mW at room temperature were fabricated with a two-step wet etching technique using the interface between the top cladding and waveguide core materials as an etch stopper. The devices did not suffer from lateral current spreading. The second optical mode was suppressed by the low lateral confinement. Experiments showed that reducing the ridge width below 6m did not affect the device efficiency or the output beam quality but led to an increase of the transparency current density. We speculate that this increase was associated with the mismatch between the wide modal size and the narrow current path in ridge lasers with suppressed lateral current spreading. © 2012 IOP Publishing Ltd.


Norton D.T.,Santa Barbara Infrared Inc. | LaVeigne J.,Santa Barbara Infrared Inc. | Franks G.,Santa Barbara Infrared Inc. | McHugh S.,Santa Barbara Infrared Inc. | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

Next-generation Infrared Focal Plane Arrays (IRFPAs) are demonstrating ever increasing frame rates, dynamic range, and format size, while moving to smaller pitch arrays.1 These improvements in IRFPA performance and array format have challenged the IRFPA test community to accurately and reliably test them in a Hardware-In-the-Loop environment utilizing Infrared Scene Projector (IRSP) systems. The rapidly-evolving IR seeker and sensor technology has, in some cases, surpassed the capabilities of existing IRSP technology. To meet the demands of future IRFPA testing, Santa Barbara Infrared Inc. is developing an Infrared Light Emitting Diode IRSP system. Design goals of the system include a peak radiance >2.0W/cm2/sr within the 3.0-5.0μm waveband, maximum frame rates >240Hz, and >4million pixels within a form factor supported by pixel pitches ≤32μm. This paper provides an overview of our current phase of development, system design considerations, and future development work. © 2016 SPIE.


Laikhtman B.,Power Photonic Corporation
Journal of Applied Physics | Year: 2012

Non-radiative trapping of electrons to deep traps in III-V superlattices is studied. An advancement in the technique of the calculation made it possible to avoid some approximation used in earlier calculation and to obtain a simpler, more precise, and clear results that extend applicability of the theory to narrow band gap materials and superlattices. It is shown that the non-radiative trapping rate in regular Huang-Rhys model has an activation temperature dependence with the activation energy equal to a portion of the phonon energy. The trapping to deep states can be accompanied with emission of phonons of different modes with different frequencies that can significantly reduce the activation energy. I argue that the role of superlattice phonons is relatively small except very low temperature where processes with their participation can have zero activation energy. A specific attention is paid in the paper to a qualitative explanation of every step of the calculation and details of the result. The theoretical results are used for understanding of recently measured temperature dependence of the minority carrier lifetime in InAs/GaSb superlattices. © 2012 American Institute of Physics.

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