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Tanaka T.,Power Device Works | Shiraishi T.,Power Device Works
Mitsubishi Electric Advance | Year: 2013

The existing 1,200V Large DIPIPM Ver. 4 Series is compatible with the AC 400 V power supply for overseas markets, and the product line had already been completed up to 35 A. This time, a new 50-A model has been developed and added to the series, and its features are presented in this article. By adopting the 6th-generation light punch through carrier stored trench gate bipolar transistor (LPT-CSTBT), the new product has achieved a lower loss and larger current capacity than those of the conventional products, while keeping the same package size. In addition, by improving precision of temperature detector, heat dissipation structure designing is eased.

Yoshino M.,Power Device Works | Shimizu K.,Power Device Works
Mitsubishi Electric Advance | Year: 2013

A 1200 V high voltage integrated circuit (HVIC) has been developed based on the 2nd-generation divided RESURF structure, which employs the newly developed high-breakdown technology. While the fabrication process remains the same as that for the existing 600 V HVIC, the resistivity of the substrate is optimized and the PolyR FP configuration is applied to the field plate structure. A prototype HVIC has achieved a high-breakdown voltage exceeding 1,300 V.

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