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Milan, Italy

The Polytechnic University of Milan is the largest technical university in Italy, with about 40,000 students.It offers undergraduate, graduate and higher education courses in engineering, architecture and design.Founded in 1863, it is the oldest university in Milan.The Politecnico has two main campuses in Milan city, where the majority of the research and teaching activity are located, and other satellite campuses in five other cities across Lombardy and Emilia Romagna. The central offices and headquarters are located in the historical campus of Città Studi in Milan, which is also the largest, active since 1927.The university was ranked the best for Engineering and among the top big universities in Italy in the CENSIS-Repubblica Italian University rankings for 2011-2012 and is ranked as the 28th best technical university in the world according to the QS World University Rankings.Its notable alumni include Giulio Natta, Nobel laureate in chemistry in 1963. Wikipedia.

Longhi S.,Polytechnic of Milan
Optics Letters | Year: 2010

An optical analog of Zitterbewegung (ZB), i.e., of the trembling motion of Dirac electrons caused by the interference between positive and negative energy states, is proposed for spatial beam propagation in binary waveguide arrays. In this optical system the ZB is simply observable as a quiver spatial oscillatory motion of the beam center of mass around its mean trajectory. © 2010 Optical Society of America. Source

Longhi S.,Polytechnic of Milan
Physical Review Letters | Year: 2010

Light propagation in distributed-feedback optical structures with gain or loss regions is shown to provide an accessible laboratory tool to visualize in optics the spectral properties of the one-dimensional Dirac equation with non-Hermitian interactions. Spectral singularities and PT symmetry breaking of the Dirac Hamiltonian are shown to correspond to simple observable physical quantities and are related to well-known physical phenomena such as resonance narrowing and laser oscillation. © 2010 The American Physical Society. Source

Longhi S.,Polytechnic of Milan
Physical Review Letters | Year: 2011

In recent works, the idea of time-reversed laser oscillation has been proposed and demonstrated to realize a two-channel coherent perfect absorber. Here the time reversal of optical parametric oscillation in a nonlinear χ(2) medium is considered and shown to realize a coherent perfect absorber for colored incident signal and idler fields. A detailed analysis is presented for the time-reversed process of mirrorless optical parametric oscillation in the full nonlinear regime. © 2011 American Physical Society. Source

Piazza R.,Polytechnic of Milan
Reports on Progress in Physics | Year: 2014

Colloid sedimentation has played a seminal role in the development of statistical physics thanks to the celebrated experiments by Perrin, which provided a concrete demonstration of molecular reality and gave strong support to Einstein's theory of Brownian motion. This review, which mostly focuses on settling at low Peclét number, where Brownian fluctuations are dominant, aims to show that a lot more can be learnt both from the sedimentation equilibrium and from the particle settling dynamics of a wide class of systems, ranging from simple colloids to mesogenic suspensions, from soft solids to active particles and living organisms. At the same time, the occurrence of unexpected and surprising effects brings about challenging questions in statistical and fluid mechanics that make sedimentation an exciting field of research. © 2014 IOP Publishing Ltd. Source

Ielmini D.,Polytechnic of Milan
IEEE Transactions on Electron Devices | Year: 2011

Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of conductive filaments through insulating materials, such as metal oxides and chalcogenide glasses. Understanding the mechanisms for filament formation and disruption in resistive switching materials is a critical step toward the development of reliable and controllable RRAM for future-generation storage. In particular, the capability to control the filament resistance and the reset current through the compliance current during filament formation may provide a key signature to clarify the switching mechanism. This paper provides a physically based explanation for the universal resistance switching in bipolar RRAM devices. A numerical model of filament growth based on thermally activated ion migration accounts for the resistance switching characteristics. The same physical picture is extended to numerically model the reset transition. The impact of migration parameters and experimental setup on the set/reset characteristics is discussed through numerical simulations. © 2011 IEEE. Source

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