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Hsinchu, Taiwan

Hsu P.-C.,National Taiwan University | Hsu C.-J.,National Taiwan University | Chang C.-H.,National Taiwan University | Tsai S.-P.,National Taiwan University | And 4 more authors.
ACS Applied Materials and Interfaces | Year: 2014

In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm2 V-1 s-1. P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated. © 2014 American Chemical Society. Source


Hsu P.-C.,National Taiwan University | Tsai S.-P.,National Taiwan University | Chang C.-H.,National Taiwan University | Hsu C.-J.,National Taiwan University | And 4 more authors.
Thin Solid Films | Year: 2015

In this work, we have investigated sputtering deposition of p-type SnO using the robust Sn/SnO2 mixed target in a hydrogen-containing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, and electrical properties of deposited SnOX films were studied. While the SnO2/SnO mixed phase was generally obtained by sputteringwith the Sn/SnO2 mixed target in the pure Ar atmosphere, rather pure polycrystalline SnO films with single preferential orientation could be readily obtained by introducing an appropriate amount of hydrogen into the sputtering gas and by appropriate post-annealing (e.g., 300 °C). SnO films thus obtained exhibited a p-type Hall mobility of up to ∼2 cm2 V-1 s-1 and p-type SnO thin-film transistors using such SnO films were also demonstrated, showing a field-effect mobility of up to 1.16 cm2 V-1 s-1. © 2015 Elsevier B.V. All rights reserved. Source


Chen W.-C.,National Taiwan University | Hsu P.-C.,National Taiwan University | Chien C.-W.,National Taiwan University | Chang K.-M.,National Taiwan University | And 6 more authors.
Journal of Physics D: Applied Physics | Year: 2014

In this work, we report successful implementation of room-temperature- processed flexible n-InGaZnO/p-Cu2O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu2O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu2O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44V, a high rectification ratio of up to 3.4×104 at ±1.2V, a high forward current of 1Acm-2 around 1V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu2O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27MHz, sufficient for high-frequency (13.56MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. © 2014 IOP Publishing Ltd. Source


Hsieh H.-H.,Polyera Taiwan Corporation | Yu X.,Northwestern University | Xia Y.,Polyera Corporation | Sheets C.W.,Polyera Corporation | And 5 more authors.
Digest of Technical Papers - SID International Symposium | Year: 2014

Novel approaches including combustion synthesis achieved via both spin-coating/post annealing and spray-coating/in-situ annealing can be used to generate high-quality metal oxide thin films, including IGZO, and high performance metal oxide TFTs at relatively low temperatures. Furthermore, we demonstrate metal oxide TFTs using proprietary solution-processed dielectric and passivation layers. © 2014 Society for Information Display. Source


Sheets W.C.,Polyera Corporation | Kang S.J.,Polyera Corporation | Hsieh H.-H.,Polyera Taiwan Corporation | Lin S.-I.,Polyera Taiwan Corporation | And 8 more authors.
Proceedings - Electronic Components and Technology Conference | Year: 2015

Numerous solution-processed dielectrics were studied in metal oxide thin film transistors (TFTs) to understand their potential application in flexible display technology. A series of dielectrics was synthesized and systematically formulated to deposit organic gate insulating thin film layers that demonstrate low leakage current (≤10-8 A/cm2 at 2 MV/cm), high breakdown voltages (>150 V), film flexibility, photopatternability (5-10 μm via hole size), increased temperature stability (up to temperatures of 300 °C), and resistance to common chemicals used in the indium gallium zinc oxide (IGZO) TFT fabrication process. In particular, surface modification improved the stability of bottom-gate organic gate insulators during the sputtering, patterning, and annealing processes for the IGZO active layer on the dielectric surface. The best IGZO TFT performance was achieved when certain Polyera organic gate insulators were incorporated in top-gate top-contact IGZO TFT devices, yielding excellent mobility (∼15 cm2/V·s), Vth ∼ 0 V, negligible hysteresis, sharp sub-threshold swing (∼300 mV/dec), and good bias temperature stress stability. When combined with polymer substrates such organic gate insulators yield truly flexible IGZO TFTs compatible with large-scale production methods. © 2015 IEEE. Source

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