Plessey Semiconductors Ltd.
Plessey Semiconductors Ltd.
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: SC5-12a-2014 | Award Amount: 6.20M | Year: 2015
The goal of INREP is to develop and deploy valid and robust alternatives to indium (In) based transparent conductive electrode materials as electrodes. In-based materials, mainly ITO, are technologically entrenched in the commercial manufacture of components like LEDs (both organic and inorganic), solar cells, touchscreens, so replacing them with In-free transparent conducting oxides (TCOs) will require holistic approach. The INREP philosophy is to meet this challenge by addressing the whole value chain via an application focused research programme aiming at developing tailor made solutions for each targeted application. This programme will produce a complete evaluation of the relevant properties of the proposed TCOs, including the impact of deposition technique, and by doing so, devise optimum processes for their application in selected, high value application areas. The selected application areas are organic and inorganic light emitting diodes (LEDs), solar cells and touchscreens. The physical properties of interest are the transparency, electrical conductivity, work function, texture, and chemical and thermal stability. To reach its overall goal, INREP brings together industrial and academic experts in TCOs, the technology and processes for their deposition and their applications in a concerted research programme that will result in the creation of TCOs and deposition technologies with the optimum opto-electrical properties suitable for the economic and safe manufacture of the specified photonic or opto-electronic components. The approach will include life cycle assessments of the environmental impact of the developed TCO materials and of their formation technologies over the entire period from application in manufacturing, throughcomponent operation into waste management.
Agency: GTR | Branch: Innovate UK | Program: | Phase: Feasibility Study | Award Amount: 111.95K | Year: 2014
The objective of this project is to enhance vehicle safety systems through the creation of an automotive driver heart-rate sensor system that produces data of sufficient quality and consistency that it can be used to monitor driver alertness and well-being. Real time analysis of such data will enable the monitoring system to take early action to prevent a driver from falling asleep at the wheel and in the case of commercial vehicle operations, transmit the data over a wireless network to a control centre for automated monitoring of driver well-being. Based on a technology acquired from the University of Sussex, Plessey Semiconductors has developed a fully patented Electrical Potential Integrated Circuit (EPIC) Sensor which can measure electrophysiology signals without direct skin contact, skin preparation or conductive gels. Nottingham Trent University has developed a number of material technologies which allow the creation of conductive and non-conductive patches and connections within a piece of knitted fabric. These materials can form part of a remote electrode for the EPIC sensor, and thus provide a unique form factor for enhanced data acquisition and vehicle design. .
Connor S.,Plessey Semiconductors Ltd.
Sensors (Peterborough, NH) | Year: 2011
The electric potential integrated circuit (EPIC) sensor, an extremely robust solid-state electrometer with such high input impedance that it is close to being a perfect voltmeter, is presented. The electrode is protected by a capping layer of dielectric material to ensure that the electrode is isolated from the body being measured. The device is AC coupled with a lower corner frequency (-3dB) of a few tens of MHz and an upper corner frequency above 200 MHz. The device in single-ended mode can be used to read electric potential. The size of the electrode is somewhat arbitrary and depends on the input capacitance required for a particular application. The input capacitance can be driven as low as 10 -17 F with the input resistance being boosted to values up to around 10 15, thus keeping the interaction with the target field to an absolute minimum and ensuring that all currents are small displacement currents only.
Hakim M.M.A.,University of Southampton |
Tan L.,University of Liverpool |
Abuelgasim A.,University of Southampton |
Mallik K.,University of Southampton |
And 6 more authors.
IEEE Transactions on Electron Devices | Year: 2010
We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high-drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-μm lithography are compared with nonsilicided devices. A sourcedrain (S/D) activation anneal of 30 s at 1100 °C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an f T of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-μ m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar. © 2006 IEEE.
Trindade A.J.,University of Strathclyde |
Guilhabert B.,University of Strathclyde |
Xie E.Y.,University of Strathclyde |
Ferreira R.,University of Strathclyde |
And 10 more authors.
Optics Express | Year: 2015
We report the transfer printing of blue-emitting micron-scale light-emitting diodes (micro-LEDs) onto fused silica and diamond substrates without the use of intermediary adhesion layers. A consistent Van der Waals bond was achieved via liquid capillary action, despite curvature of the LED membranes following release from their native silicon growth substrates. The excellence of diamond as a heat-spreader allowed the printed membrane LEDs to achieve optical power output density of 10 W/cm2 when operated at a current density of 254 A/cm2. This high-currentdensity operation enabled optical data transmission from the LEDs at 400 Mbit/s. © 2015 Optical Society of America.
Mukherjee S.,Plessey Semiconductors Ltd |
Breakspear R.,Plessey Semiconductors Ltd |
Connor S.D.,Plessey Semiconductors Ltd
Proceedings - Wireless Health 2012, WH 2012 | Year: 2012
This paper describes a technique for non-contact measurement of cardiac signals (ECG) from the driver of a car, with a wireless interface, thus allowing continuous monitoring of driver health. The system employs an ultra high impedance solid state electric field sensor-lectric Potential Integrated Circuit (EPIC) -developed by Plessey Semiconductors Ltd and the University of Sussex . Recent developments in both technology and understanding have resulted in a reliable technique for measuring ECG through clothing by means of sensors embedded in the driver's seat. A Bluetooth interface enables transmission of the data to a monitoring system, either in-car or on a mobile device such as a smart phone or tablet. The data can be monitored in real time", or subsequently sent over mobile or cloud computing networks to a remote server for analysis.
Bruckbauer J.,University of Strathclyde |
Brasser C.,University of Strathclyde |
Findlay N.J.,University of Strathclyde |
Edwards P.R.,University of Strathclyde |
And 4 more authors.
Journal of Physics D: Applied Physics | Year: 2016
White hybrid inorganic/organic light-emitting diodes (LEDs) were fabricated by combining a novel organic colour converter with a blue inorganic LED. An organic small molecule was specifically synthesised to act as down-converter. The characteristics of the white colour were controlled by changing the concentration of the organic molecule based on the BODIPY unit, which was embedded in a transparent matrix, and volume of the molecule and encapsulant mixture. The concentration has a critical effect on the conversion efficiency, i.e. how much of the absorbed blue light is converted into yellow light. With increasing concentration the conversion efficiency decreases. This quenching effect is due to aggregation of the organic molecule at higher concentrations. Increasing the deposited amount of the converter does not increase the yellow emission despite more blue light being absorbed. Degradation of the organic converter was also observed during a period of 15 months from LED fabrication. Angular-dependent measurements revealed slight deviation from a Lambertian profile for the blue and yellow emission peaks leading to a small change in 'whiteness' with emission angle. Warm white and cool white light with correlated colour temperatures of 2770 K and 7680 K, respectively, were achieved using different concentrations of the converter molecule. Although further work is needed to improve the lifetime and poor colour rendering, these hybrid LEDs show promising results as an alternative approach for generating white LEDs compared with phosphor-based white LEDs. © 2016 IOP Publishing Ltd.
Agency: GTR | Branch: Innovate UK | Program: | Phase: Collaborative Research & Development | Award Amount: 343.77K | Year: 2013
Existing light emitting diodes (LEDs) do not emit light directionally, so in many applications not all photons are coupled into the optical system and result in wasted energy. This is notably true in image projection systems (a US$3B annual market) which require bigger, much brighter LEDs to replace inefficient discharge lamps. The aim of this project is to advance the development of new large area, high brightness InGaN LEDs with highly directional emission and capable of operating at high electrical power density to achieve the high on-screen lumens needed for advanced digital projectors. The innovation will involve realising such LEDs on Silicon substrates, the incorporation of novel nanostructures by cost effective methods to direct the light output, and wafer bonding to thermally conducting substrates to address the heat extraction problem. The new LEDs will also be tested in a novel projector design that requires multiple highly directional LEDs, to expand market opportunities.
Agency: GTR | Branch: Innovate UK | Program: | Phase: European | Award Amount: 183.17K | Year: 2013
Agency: GTR | Branch: Innovate UK | Program: | Phase: Procurement | Award Amount: 42.00K | Year: 2016
Plessey Semiconductors will be developing a single-arm ECG monitor aimed primarily at sports monitoring applications, but also with uses in other fields such as home health. Using its award- winning EPIC sensor in conjunction with knitted electrodes developed by Nottingham Trent University as part of a previous Innovate UK project, an armband will be produced for testing by Loughborough University and McClaren Applied Technologies.