Picogiga International

Villejust, France

Picogiga International

Villejust, France

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Perez-Tomas A.,IMB CNM CSIC | Fontsere A.,IMB CNM CSIC | Placidi M.,IMB CNM CSIC | Baron N.,PICOGIGA International | And 5 more authors.
Materials Science Forum | Year: 2011

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper by measuring TLM contact resistances as a function of temperature. In particular, two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction. © (2011) Trans Tech Publications.


Dagher G.,CNRS Optic of Semiconductor nanoStructures Group | Nguyen T.D.H.,CNRS Optic of Semiconductor nanoStructures Group | Pere-Laperne N.,CNRS Optic of Semiconductor nanoStructures Group | Mimila-Arroyo J.,Av Institute Polytechnic Nacional No2508 | And 5 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2011

Effects of fluorine-based plasma treatment on the GaN-based HEMTs electrical properties have been investigated. Two structures have been studied and compared, one with AlGaN alloy barrier and another one with AlN/GaN super-lattice (SL) barrier. Firstly a large positive threshold voltage (Vth) shift in the structure with AlGaN alloy barrier is observed. Vth shift is due to the incorporation of fluorine into the barrier. As a consequence the 2D-electron gas density is lower and Vth enlarges. Secondly a small negative Vth shift is obtained in the structure with an AlN/GaN SL barrier. It has been attributed to fluorine n-type doping in the SL barrier. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Frayssinet E.,French National Center for Scientific Research | Cordier Y.,French National Center for Scientific Research | Schenk H.P.D.,PICOGIGA International | Bavard A.,OMMIC
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2011

In this paper, we report on the growth of thick gallium nitride (GaN) layers on 4-in. and 6-in., (111)-orientated silicon substrates by metalorganic vapor phase epitaxy. Up to 4 μm thick continuous GaN layers have been obtained by inserting both SiN and AlN interlayers into the structure. With dislocation densities of about 1-2×109 cm-2 and GaN(002) and (302) X-ray rocking curve full widths at half maximum of 420 and 1360 arcsec for 4-in. and 374 and 810 arcsec for 6-in., respectively, the final continuous GaN layer exhibits excellent crystalline properties. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Schenk H.P.D.,PICOGIGA International | Schenk H.P.D.,French National Center for Scientific Research | Frayssinet E.,French National Center for Scientific Research | Bavard A.,OMMIC | And 3 more authors.
Journal of Crystal Growth | Year: 2011

We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium nitride and the silicon substrate, up to 6.7 μm thick crack-free group III-nitride layers have been grown. Root mean-squares surface roughness of 0.5 nm, threading dislocation densities of 1.1×109 cm-2, as well as X-ray diffraction (XRD) full widths at half-maximum (FWHM) of 406 arcsec for the GaN(0 0 2) and of 1148 arcsec for the GaN(3 0 2) reflection have been measured. The donor bound exciton has a low-temperature photoluminescence line width of 12 meV. The correlation between the threading dislocation density and XRD FWHM, as well as the correlation between the wafer curvature and the GaN in-plane stress is discussed. An increase of the tensile stress is observed upon n-type doping of GaN by silicon. © 2010 Elsevier B.V. All rights reserved.


Hoel V.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | Defrance N.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | Douvry Y.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | De Jaeger J.C.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | And 5 more authors.
Electronics Letters | Year: 2010

Low microwave noise performance of AlGaN/GaN HEMTs fabricated on MOCVD epitaxial structures grown on composite substrates (SiCopSiC) is reported. They are made of a thin SiC single-crystal layer transferred on top of a thick polycrystalline SiC wafer. The transistor fabrication process is similar to the one developed for AlGaN/GaN devices on SiC substrate. A minimum noise figure of 0.12dB with an associated gain of 14.8dB at 3GHz is found, showing the capability of gallium-nitride based devices for low noise microwave applications in the S-band. © 2010 The Institution of Engineering and Technology.


Defrance N.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | Douvry Y.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | Hoel V.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | Gerbedoen J.-C.,CNRS Institute of Electronics, Microelectronics and Nanotechnology | And 5 more authors.
Electronics Letters | Year: 2010

In this reported work, the thermal resistance of AlGaN/GaN HEMTs processed on SopSiC composite substrate is determined by electrical I-V pulsed measurement. SopSiC substrate is based on an innovative structure with a thin Si single crystal layer transferred on top of a thick polycrystalline SiC wafer. For the first time, it is demonstrated that the thermal resistivity of such devices reaches 18.9K·mm/W when 7.5W/mm power is dissipated, while 23.5K·mm/W are measured on silicon in the same conditions. This result shows the capabilities of composite substrates to compete with silicon for microwave power applications. © 2010 The Institution of Engineering and Technology.

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