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Danilov Yu.A.,Physico Technical Research Institute of NNSU | Drozdov Yu.N.,RAS Institute for Physics of Microstructures | Dorokhin M.V.,Physico Technical Research Institute of NNSU | Kulakovskii V.D.,RAS Institute of Solid State Physics | And 3 more authors.
Solid State Phenomena | Year: 2011

Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta- doped layer has been investigated. It was found that delta〈Mn〉-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.

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