Photline Technologies

Besançon, France

Photline Technologies

Besançon, France
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Morant M.,Polytechnic University of Valencia | Llorente R.,Polytechnic University of Valencia | Hauden J.,Photline Technologies | Quinlan T.,University of Essex | And 2 more authors.
Optics Express | Year: 2011

A dual-drive LiNbO3 architecture modulator with chirp management is proposed and developed offering SFDR > 25 dB in a 1.4 V bias excursion compared to only 0.5 V bias excursion in a conventional Mach-Zehnder electro-optical modulator (MZ-EOM). The architecture effectively extends the linear regime and enables the optical transmission of wireless systems employing orthogonal division multiplexing (OFDM) modulation such as ultra-wide band (UWB) which require high linearity over a broad frequency range due to their high peak-to-average power ratio (PARP). Radio-over-fiber UWB transmission in a passive optical network is experimentally demonstrated employing this technique, exhibiting an enhancement of 2.2 dB in EVM after 57 km SSMF when the dual-drive developed modulator is employed. © 2011 Optical Society of America.


Thomson D.J.,University of Southampton | Gardes F.Y.,University of Southampton | Liu S.,University of Southampton | Porte H.,Photline Technologies | And 7 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2013

Silicon photonics is poised to revolutionize several data communication applications. The development of high performance optical modulators formed in silicon is essential for the technology to be viable. In this paper, we review our recent work on carrier-depletion silicon Mach-Zehnder-based optical modulators which have formed part of the work within the U.K. Silicon Photonics and HELIOS projects, as well as including some recent new data. A concept for the self-aligned formation of the p-n junction which is flexible in the capability to produce a number of device configurations is presented. This process is the key in having performance repeatability, a high production yield, and large extinction ratios. Experimental results from devices which are formed through such processes are presented with operation up to and beyond 40 Gbit/s. The potential for silicon photonics to fulfill longer haul applications is also explored in the analysis of the chirp produced from these devices and the ability to produce large extinction ratios at high speed. It is shown that the chirp produced with the modulator operated in dual drive configuration is negligible and that an 18-dB dynamic modulation depth is obtainable at a data rate of 10 Gbit/s. © 2013 IEEE.


Porte H.,Photline Technologies | Ben Bakir B.,CEA Grenoble | Bernabe S.,CEA Grenoble
IEEE International Conference on Group IV Photonics GFP | Year: 2011

We report the design and realization of a silicon submount characterized by the association of V-groove and a micromachined notch, allowing to host a lensed fiber in an epoxy free configuration. The identical thermal coefficient between the submount and the waveguide chip allows to get a low temperature dependence. © 2011 IEEE.


Morin P.,University of Burgundy | Fatome J.,University of Burgundy | Finot C.,University of Burgundy | Pitois S.,University of Burgundy | And 2 more authors.
Optics Express | Year: 2011

In this paper, we report all-optical regeneration of the state of polarization of a 40-Gbit/s return-to-zero telecommunication signal as well as its temporal intensity profile and average power thanks to an easy-toimplement, all-fibered device. In particular, we experimentally demonstrate that it is possible to obtain simultaneously polarization stabilization and intensity profile regeneration of a degraded light beam thanks to the combined effects of counterpropagating four-wave mixing, self-phase modulation and normal chromatic dispersion taking place in a single segment of optical fiber. All-optical regeneration is confirmed by means of polarization and bit-error-rate measurements as well as real-time observation of the 40 Gbit/s telecommunication signal. © 2011 Optical Society of America.


Kopp C.,MINATEC Institute | Bernabe S.,MINATEC Institute | Bakir B.B.,MINATEC Institute | Fedeli J.-M.,MINATEC Institute | And 5 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2011

Silicon photonics is a new technology that should at least enable electronics and optics to be integrated on the same optoelectronic circuit chip, leading to the production of low-cost devices on silicon wafers by using standard processes from the microelectronics industry. In order to achieve real-low-cost devices, some challenges need to be taken up concerning the integration technological process of optics with electronics and the packaging of the chip. In this paper, we review recent progress in the packaging of silicon photonic circuits from on-CMOS wafer-level integration to the single-chip package and input/output interconnects. We focus on optical fiber-coupling structures comparing edge and surface couplers. In the following, we detail optical alignment tolerances for both coupling architecture, discussing advantages and drawbacks from the packaging process point of view. Finally, we describe some achievements involving advanced-packaging techniques. © 2006 IEEE.


Thomson D.J.,University of Southampton | Porte H.,PHOTLINE Technologies | Goll B.,Vienna University of Technology | Knoll D.,Ihp Microelectronics | And 6 more authors.
Laser and Photonics Reviews | Year: 2014

Optical modulators based upon carrier depletion have proven to be effective at achieving high speed operation in silicon. However, when incorporated into Mach-Zehnder Interferometer structures they require electronic driver amplifiers to provide peak to peak drive voltages of a few volts in order to achieve a large extinction ratio. For minimal performance degradation caused by the electrical connection between the driver and the modulator monolithic integration in the front end of the process is the preferred integration route. The formation of electronic driver amplifiers in BiCMOS is advantageous over CMOS in terms of achievable performance versus cost. In this work the first monolithic photonic integration in the electronic front-end of a high-performance BiCMOS technology process is demonstrated. Modulation at 10 Gbit/s is demonstrated with an extinction ratio >8 dB. The potential scalability of both the silicon photonic and BiCMOS elements make this technology an attractive prospect for the future. © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Lee M.W.,CNRS Femto ST Institute | Stiller B.,CNRS Femto ST Institute | Hauden J.,PHOTLINE Technologies | Maillotte H.,CNRS Femto ST Institute | And 3 more authors.
IEEE Photonics Technology Letters | Year: 2012

In this letter, we experimentally demonstrate Brillouin echoes-based distributed optical fiber sensing with centimeter spatial resolution. It is based on a differential phase-shift-keying technique using a single Mach-Zehnder modulator to generate a pump pulse and a π-phase-shifted pulse with an easy and accurate adjustment of delay. The results are compared to those obtained in standard Brillouin echo-distributed sensing system with two optical modulators and clearly show a resolution of 5 cm in a spliced segment between two fibers by applying a π-phase-shifted pulse of 500 ps. © 2011 IEEE.


Grossard N.,Photline Technologies | Hauden J.,Photline Technologies | Porte H.,Photline Technologies
Journal of Lightwave Technology | Year: 2011

We report the design and the fabrication of an anticoupling structure allowing to bring close waveguides without inducing evanescent coupling between them. This method, inspired from a well-known phenomenon of quantum physics, consists in the introduction of a periodic perturbation of the waveguide structure. The aim is to optimize the relative position of the waveguides to the electrodes so as to increase the electro-optical overlaps, in particular in lithium niobate integrated modulator (LiNbO 3 ). © 2011 IEEE.


Nguyen D.M.,CNRS Femto ST Institute | Stiller B.,CNRS Femto ST Institute | Lee M.W.,CNRS Femto ST Institute | Beugnot J.-C.,CNRS Femto ST Institute | And 4 more authors.
IEEE Photonics Technology Letters | Year: 2013

We demonstrate an alternative technique to reduce pump depletion and to improve sensitivity in the long-range Brillouin optical time-domain analysis (BOTDA) sensor. Our BOTDA system uses an anti-Stokes single-sideband suppressed-carrier modulation technique that balances the pump depletion due to fiber loss. With this technique, we show both numerically and experimentally a great improvement compared to the dual sideband standard technique. © 2012 IEEE.


Hauden J.,PHOTLINE Technologies | Porte H.,PHOTLINE Technologies
2011 IEEE International Topical Meeting on Microwave Photonics - Jointly Held with the 2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP 2011 | Year: 2011

We present a simple accurate method for the evaluation of the half-wave voltage of phase modulators at high frequency that does not require any high-speed photodiode or components or spectral analyzer. It is based on the use of a tunable unbalanced interferometer and optical mean power measurement. We report on results obtains with large bandwidth lithium niobate phase modulators. © 2011 IEEE.

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