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Besançon, France

Morin P.,University of Burgundy | Fatome J.,University of Burgundy | Finot C.,University of Burgundy | Pitois S.,University of Burgundy | And 2 more authors.
Optics Express | Year: 2011

In this paper, we report all-optical regeneration of the state of polarization of a 40-Gbit/s return-to-zero telecommunication signal as well as its temporal intensity profile and average power thanks to an easy-toimplement, all-fibered device. In particular, we experimentally demonstrate that it is possible to obtain simultaneously polarization stabilization and intensity profile regeneration of a degraded light beam thanks to the combined effects of counterpropagating four-wave mixing, self-phase modulation and normal chromatic dispersion taking place in a single segment of optical fiber. All-optical regeneration is confirmed by means of polarization and bit-error-rate measurements as well as real-time observation of the 40 Gbit/s telecommunication signal. © 2011 Optical Society of America. Source


Thomson D.J.,University of Southampton | Gardes F.Y.,University of Southampton | Liu S.,University of Southampton | Porte H.,Photline Technologies | And 7 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2013

Silicon photonics is poised to revolutionize several data communication applications. The development of high performance optical modulators formed in silicon is essential for the technology to be viable. In this paper, we review our recent work on carrier-depletion silicon Mach-Zehnder-based optical modulators which have formed part of the work within the U.K. Silicon Photonics and HELIOS projects, as well as including some recent new data. A concept for the self-aligned formation of the p-n junction which is flexible in the capability to produce a number of device configurations is presented. This process is the key in having performance repeatability, a high production yield, and large extinction ratios. Experimental results from devices which are formed through such processes are presented with operation up to and beyond 40 Gbit/s. The potential for silicon photonics to fulfill longer haul applications is also explored in the analysis of the chirp produced from these devices and the ability to produce large extinction ratios at high speed. It is shown that the chirp produced with the modulator operated in dual drive configuration is negligible and that an 18-dB dynamic modulation depth is obtainable at a data rate of 10 Gbit/s. © 2013 IEEE. Source


Lee M.W.,CNRS Femto ST Institute | Stiller B.,CNRS Femto ST Institute | Hauden J.,Photline Technologies | Maillotte H.,CNRS Femto ST Institute | And 3 more authors.
IEEE Photonics Technology Letters | Year: 2012

In this letter, we experimentally demonstrate Brillouin echoes-based distributed optical fiber sensing with centimeter spatial resolution. It is based on a differential phase-shift-keying technique using a single Mach-Zehnder modulator to generate a pump pulse and a π-phase-shifted pulse with an easy and accurate adjustment of delay. The results are compared to those obtained in standard Brillouin echo-distributed sensing system with two optical modulators and clearly show a resolution of 5 cm in a spliced segment between two fibers by applying a π-phase-shifted pulse of 500 ps. © 2011 IEEE. Source


Kopp C.,MINATEC Institute | Bernabe S.,MINATEC Institute | Bakir B.B.,MINATEC Institute | Fedeli J.-M.,MINATEC Institute | And 5 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2011

Silicon photonics is a new technology that should at least enable electronics and optics to be integrated on the same optoelectronic circuit chip, leading to the production of low-cost devices on silicon wafers by using standard processes from the microelectronics industry. In order to achieve real-low-cost devices, some challenges need to be taken up concerning the integration technological process of optics with electronics and the packaging of the chip. In this paper, we review recent progress in the packaging of silicon photonic circuits from on-CMOS wafer-level integration to the single-chip package and input/output interconnects. We focus on optical fiber-coupling structures comparing edge and surface couplers. In the following, we detail optical alignment tolerances for both coupling architecture, discussing advantages and drawbacks from the packaging process point of view. Finally, we describe some achievements involving advanced-packaging techniques. © 2006 IEEE. Source


Thomson D.J.,University of Southampton | Porte H.,Photline Technologies | Goll B.,Vienna University of Technology | Knoll D.,Ihp Microelectronics | And 6 more authors.
Laser and Photonics Reviews | Year: 2014

Optical modulators based upon carrier depletion have proven to be effective at achieving high speed operation in silicon. However, when incorporated into Mach-Zehnder Interferometer structures they require electronic driver amplifiers to provide peak to peak drive voltages of a few volts in order to achieve a large extinction ratio. For minimal performance degradation caused by the electrical connection between the driver and the modulator monolithic integration in the front end of the process is the preferred integration route. The formation of electronic driver amplifiers in BiCMOS is advantageous over CMOS in terms of achievable performance versus cost. In this work the first monolithic photonic integration in the electronic front-end of a high-performance BiCMOS technology process is demonstrated. Modulation at 10 Gbit/s is demonstrated with an extinction ratio >8 dB. The potential scalability of both the silicon photonic and BiCMOS elements make this technology an attractive prospect for the future. © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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